Articles et communications publiés dans des revues à comité de lecture

2003 2004 2005 2006 2007 2008 2009 2010

    


2002

Abel M., Robach Y., Porte L.- Stress induced surface structures and reactivity of thin layer Pd/Cu(110) deposits.- Surface Science, vol. 498, p. 244-, 2002

Afanas’ev V.V., Houssa M., Stesmans A., Adriaenssens G.J., Heyns M.M.- Band alignment at the interface of Al2O3 and ZrO2-based insulators with metals and Si.- Journal of Non-Crystalline Solids, vol. 303, p. 69-77, 2002

Aguir K., Lemire C., Lollman D.B.B.- Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor.- Sensors and Actuators B, vol. 4208, p. 1-5, 2002

Auriac N., Martinuzzi S.- Trap profiling at nanocavity bands in silicon wafers by means of capacitance-voltage measurements, .- J. of Physics, Condensed Matter., 14, 13087-94 (2002)

Barakel D., Périchaud I., Ulyashin A., Martinuzzi S.- N-P junction formation in p-type silicon by H ion implantation .- Solar Energy Material and Solar Cells 72, 285 (2002)

Barrère J., Chabriel G.- A compact sensor array for blind separation of sources.- IEEE Transactions on Circuits and Systems, Part I, vol. 49, n° 5, p. 565 -574, 2002

Barthélemy H., Fabre A.- A second generation current controlled conveyor with negative intrinsic resistance.- IEEE Transaction on Circuits and Systems I, vol. 49, n° 1, p. 63-65, 2002

Barthélemy H., Meillère S., Kussener E.- CMOS sinusoidal oscillator based on currrent-controled current conveyors.- Electronics Letters, vol. 38, n° 21, p.1254-1256, 2002

Bechade J-L., Brenner R., Goudeau P., Gailhanou M.- Influence of temperature on X-ray diffraction analysis of ZrO2 oxide layers formed on zirconium based alloys using synchrotron radiation.- Mat. Science Forum, 404-407, 803-8 (2002)

Bedoya C., Muller C., Jacob F., Gagou Y., Fremy M-A., Elkaim E.- Magnetic field-induced orientation in Co-doped SrBi2Ta2O9 ferroelectric oxide.- Journal of Physics : Condensed Matter, vol. 14, p. 11849-11857, 2002

Belhi R., Mliki N., Jomni S., Ayadi M., Abdelmoula K., Gergaud P., Clugnet G., Charai A.- The correlation between mechanical stress and magnetic properties of cobalt ultra thin films.- Thin Solid Films, 414, 119-122 (2002)

Bendahan M., Lauque P., Lambert-Mauriat C., Carchano H., Seguin J.L.- Sputtered thin films of CuBr for ammonia microsensors : morphology, composition and ageing.- Sensors and Actuators B, vol. 84, p. 6-11, 2002

Benielli D., Bergeon N., Jamgotchian H., Billia B., Voge P.- Free growth and instability morphologies in directional melting of alloys.- Physical Review E, vol. 65, p. 051604-, 2002

Bennour F., Rogez J., Mathieu J. C.- Enthalpie de formation de l'hydrate Na2SiO3 5H2O .- Ann. Chim. Sc. Mat. 27, 107-114 (2002)

Bernard F., Paris S., Vrel D., Gailhanou M., Gachon J.C., Gaffet E.- Time-resolved XRD experiments adapted to SHS reactions: autoreview.- Intern. Journ. of Self-Propagating High-Temperature Synthesis, 11, no.2, 181-90 (2002)

Bernardini J., Monchoux J.P., Chatain D, Rabkin E.- Liquid metal penetration in metallic polycrystals : new tools for a challenging unsolved problem of materials science.- Journal de Physique IV, n° 12, p. 229-237, 2002

Beszeda I., Imre A.W., Gontier-Moya E.G., Moya F., Beke D.L., Si Ahmed A.- Kinetics of morphological changes in nanoscale metallic films followed by Auger Electron Spectroscopy.- Defect and Diffusion Forum, volumes 216-217, p. 269-, 2002

Bigault T., Bocquet F., Labat S., Thomas O., Renevier H.- Chemically diffuse interface in (111) Au-Ni multilayers: an anomalous X-Ray diffraction analysis.- Appl. Surf. Science 188, 110-114 (2002)

Cavassilas N., Aniel F., Fishman G., Adde R.- Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs.- Solid State Electronics, vol. 46, no. 4, p. 559-566, 2002

Cavassilas N., Autran J. L., Aniel F., Fishman G.- Energy and temperature dependence of electron effective mass in silicon.- Journal of Applied Physics, vol. 92, p. 1431-1433, 2002

Celestini F., Debierre J.M.- Measuring kinetic coefficients by molecular dynamics simulation of zone melting.- Physical Review E, vol. 65, p. 041605-1-7, 2002

Chamard V., Metzger T. H., Bellet-Amalric E., Daudin B., Mariette H.- Investigation of GaN quantum dot stacking in multilayers with x-ray grazing incidence techniques.- Mat. Sci. and Engin. B 93, 24 (2002)

Chamard V., Metzger T. H., Ferrero C., Bellet-Amalric E., Daudin B., Mariette H., Mula G., Structure and ordering of GaN quantum dot multilayer investigated by x-ray grazing incidence techniques,.- Physica E 13, 1115 (2002)

Chamard V., Setzu S., Romestain R.- Light assisted formation of porous silicon investigated by x-ray diffraction and reflectivity,.- Appl. Surf. Science 191, 319 (2002)

Charai A., Kutcherinenko I., Penisson J. M., Pontikis V., Priester L., Wolski K., Vystavel T.- Electron microscopy and Auger spectroscopy study of the wetting of the grain boundaries in the systems Mo-Pb, Mo-Sn, Mo-Ni and Ni-Pb.- J. de Physique IV, 12, 277-287 (2002)

Charrier A., A. Coati, T.Argunova, F. Thibaudau, Y. Garreau, R. Pinchaux, I. Forbeaux, J.M. Debever, M. Sauvage-Simkin, and J.M. Themlin.- Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films.- Journal of Applied Physics, vol. 92, n° 5, p. 2479-, 2002

Charrin L., Becquart-Gallissian A., Combe A., Gonzales G., Charai A.- Key experimental parameters for internal-band formation: relationship between stress and oxidation kinetics in silver-magnesium alloys.- Oxidation of metals 57, 81-98 (2002)

Chocyk D., Proszynki A., Gladyszewski G., Labat S., Gergaud P., Thomas O.- Stresses in multilayered systems: test of the sin2y method .- Adv. Eng. Materials 4, 557 (2002)

Chocyk D., Proszynsky A., Gladyszevski G. , Labat S., Gergaud P., Thomas O.- Determination of stress in Au/Ni multilayers by symmetric and asymmetric X-ray diffraction.- Optica Aplicata 32, 333-337 (2002)

Coulet M.-V., Céolin R., Bellissent R., Beuneu B., Bergman C., Ambroise J.-P., Bichara C.- A new experimental method for studying phase separation through neutron diffraction : the case of As-rich liquid alloys in the As-S system..- J. Non Cryst. Solids 312-314, 404-8 (2002)

Croix J., U. Goerlach, C. Hu-Guo, P. Schmitt, C. Colledani and Y. Hu.- Test of APV-DMILL circuit with silicon and MSGC microstrip detectors for CMS.- Nuclear Instruments and Methods in Physics Research, vol. A484, n° 3, p. 503-514, 2002

Drouard E., Huguet-Chantôme P., Escoubas L., Flory F.- Dn/dT measurements performed using guided waves and their application to the temperature sensitivity of WDM filters.- Applied Optics, vol. 41, n° 16, p. 3132-3136, 2002

Erdelyi Z., Beke D. L., Bernardini J., Girardeaux Ch , Rolland A.- Investigations of diffusion kinetics by Auger electron spectroscopy.- Diffusion and Defect Data. Solid State Data. Part A, Defect and Diffusion Forum, vol. 203-205, p. 131-146, 2002

Erdelyi Z., Girardeaux C., Tokei Zs., Beke D.L., Cserhati Cs., Rolland A.- Investigation of the interplay of nickel dissolution and copper segregation in Ni/Cu(111) system.- Surface Science, vol. 496, n° 1-2, p. 129-140, 2002

Ersen O., Pierron-Bohnes V., Ulhaq-Bouillet C., Pirri C., Tuilier M-H., Berling D., Bertoncini P., Gailhanou M., Thiaudiere D.- Epitaxy stabilised CaF2-type ternary Col-xFe xSi2 silicides on Si(111): DAFS and HRTEM measurements.- Applied Surface Science, 188, no.1-2, 146-50(2002)

Ersen O., Ulhaq-Bouillet C., Pierron-Bohnes V., Tuilier M-H., Berling D., Bertoncini P., Pirri C., Gailhanou M., Thiaudiere D.- Evidence of a ternary Co1-xFexSi2 phase with a CaF2-type structure: High-resolution transmission electron microscopy and diffraction anomalous fine structure study.- Appl. Phys. Letters, 81, no.13,. 2346-8(2002)

Escoubas L., Drouard E., Flory F.- Theoretical study of amplitude and phase filtering of guided waves.- Applied Optics, vol. 41, n° 16, p. 3084-3091, 2002

Flory F., Escoubas L., Lazaridès B.- Artificial anisotropy and polarizing filters.- Applied Optics, vol. 41, n° 16, p. 3332-3335, 2002

Gagou Y., C. Muller, N. Aliouane, E. Elkaim, G. Nihoul, P. Saint-Grégoire.- Structural and electrical properties of the new ferroelectric PbK2LiNb5O15.- Ferroelectrics, vol. 268, p. 417-422, 2002

Garros X., Leroux C., Autran J.L.- An efficient model for accurate C-V characterization of high-k gate dielectrics using a mercury probe.- Electrochemical and Solid-State Letters, vol. 5, n° 3, p. F4-F6, 2002

Gauthier V., Bernard F., Gaffet E., Vrel D., Gailhanou M., Larpin J.P.- Investigations of the formation mechanism of nanostructured NbAl 3 via MASHS reaction. Intermetallics, 10, no.4, 377-89 (2002)

Gavillet J., Loiseau A., Ducastelle F., Thair S., Bernier P., Stéphan O., Thibault J., Charlier J.-C.  .- Microscopic mechanisms for the catalyst assisted growth of single wall carbon nanotubes  .- Carbon 40 , 1649-1663 (2002)

Girardeaux C., Clugnet G., Erdelyi Z., Nyeki J., Bernardini J., Beke D. L., Rolland A.- How to measure accurately mass transport in thin films by AES.- Surface and Interface Analysis, vol. 34, p. 389-392, 2002

Haldenwang P., Guérin R.- Transverse thermal effects in directional solidification.- Journal of Crystal Growth, vol. 244, p. 108-122, 2002

Hamard C., Lancin M., Marhic C., Pena O.- Intergrowth between binary and ternary phases in Chevrel phase compounds RE-MO6Se8 containing heavy rare earth elements.- Mat. Sc.i Eng. A 333, 250-261 (2002)

Hayn R., Pashchenko V.A., Stepanov A., Masuda T. and Uchinokura K.- Magnetic anisotropy of BaCu2Si2O7 : theory and antiferromagnetic resonance.- Physical Review B, vol. 66, p.184414-, 2002

Hennet L., Thiaudiere D., Gailhanou M., Landron C., Coutures J-P., Price D.L.- Fast X-ray scattering measurements on molten alumina using a 120° curved position sensitive detector.- Rev. of Scient. Instruments, 73, no.1, 124-9 (2002)

Houssa M., Autran J.L., Stesmans A., Heyns M.M.- Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks.- Applied Physics Letters, vol. 81, p. 709-711, 2002

Huguet-Chantôme P., Escoubas L., Flory F.- Guided-wave technique for the measurement of dielectric thin-film materials thermal properties.- Applied Optics, vol. 41, p. 3127-3131, 2002

Izard V., Record M.C., Tedenac J.C.- Mechanical alloying of a new promising thermoelectric material, Sb3Zn4 .- Journ. of Alloys and Compounds, 345, 257-264 (2002)

Jarmar T., Seger J., Ericson F., Mangelinck D., Smith U. and Zhang S.L.- Morphological and phase stability of nickel germanosilicide on Si1-xGex under thermal stress.- Journal of Applied Physics, vol. 92, p. 7193-, 2002

Labat S., Guichet C., Thomas O., Gilles B., Marty A.- Microstructural analysis of Au/Ni multilayers interfaces by SAXS and STM.- Appl. Surf. Science, 188, no.1-2, 182-7 (2002)

Lambert-Mauriat C., Lauque P., Seguin J.L., Albinet G., Bendahan M., Debierre J.M., Knauth P.- Solid state electrolysis in CuBr mixed ionic-electronic conductor thin films : observation and modelling of fractal growth.- ChemPhysChem, vol. 3, n° 1, p. 107-110, 2002

Lauque P., Laugier J.M., Jacolin C., Bendahan M., Lemire C. and Knauth P.- Impedance analysis of CuBr films for ammonia gas detection.- Sensors and Actuators B, vol. 87, p. 431-436, 2002

Lazar M., Raynaud C., Planson D., Locatelli M.L., Ottaviani L., Isoird K., Chante J.P., Nipoti R., Poggi A., Cardinali G.- A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects.- Mater. Sc. For. 389-393, 827 (2002)

Lee P.S., Mangelinck D., Pey K.L., Ding J., Chi D.Z., Dai J.Y., See A.- Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack.- Microelectronic Engineering, vol. 60, p. 171-, 2002

Lee P.S., Pey K.L., Mangelinck D., Ding J., Chi D. Z., Dai J.Y., Chan L.- Phase and layer stability of Ni- and Ni(Pt)- silicides on narrow poly-Si lines.- Journal of the Electrochemical Society, vol. 149, p. G331-, 2002

Lee P.S., Pey K.L., Mangelinck D., Ding J., Osipowicz T., See A.- Layer inversion of Ni(Pt)Si on mixed phase Si films.- Electrochemical and Solid State Letters, vol. 5, p. G15-, 2002

Lemire C., Lollman D.B.B., Al Mohammad A., Gillet E., Aguir K.- Reactive R.F. magnetron sputtering deposition of WO3 thin films.- Sensors and Actuators B, vol. 4215, p. 1-6, 2002

Lesueur C., Chatain D., Bergman C., Gas P., Baque F.- Analysis of the stability of native oxide films at liquid/lead metal interfaces.- Journal de Physique IV, n° 12, p. 155-, 2002

Liebault J., Moya-Siesse D., Bernardini J., Moya G.- Charge trapping characterisation at the interface thin oxide layer/non-conductive substrate.- Surface and Interface Analysis, vol. 34, p. 668-671, 2002

Linard Y., Richet P., Rogez J., Yamashita I., Atake T.- Thermochemistry and stability of nuclear waste glasses .- J. of Jpn Soc of Cal. 29, 122-130, 2002

Lombardo P., Albinet G.- Transfer of spectral weight in the degenerate Hubbard model in infinite dimension.- Physical Review B, vol. 65, p. 115110-, 2002

Martinuzzi S., Périchaud I., Durand F., .- Multicrystalline silicon prepared by electromagnetically continuous pulling.- Solar Energy Material and Solar Cells 72 101 (2002)

Masson P., Autran J.L., Munteanu D.- DYNAMOS : a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects.- Solid State Electronics, vol. 46, p. 1051-1059, 2002

Matko I., Gaidi M., Chenevier B., Charai A., Saikaly W., Labeau M.Pt doping of SnO2 thin films.- J. of the Electrochem. Soc., 149, 153-158 (2002)

Messina P., Dmitriev A., Lin N., Spillmann H., Abel M., Barth J.V., Kern K.- Direct observation of chiral metal-organic complexes assembled on a Cu(100) surface.- Journal of the American Chemical Society, n° 124, p. 14000-, 2002

Militaru L., Masson P., Geguan G.- Three level charge pumping on a single interface trap.- IEEE Electron Device Letters, vol. 23, no. 2, p. 94-96, 2002

Munteanu D., G. Le Carval, G. Guegan.- Impact of technological parameters on non-stationary transport in realistic 50nm MOS technology.- Solid State Electronics, vol. 46, p. 1045-1050, 2002

Munteanu D., G. Le Carval, G. Guegan.- Investigation of non-stationary transport and quantum effects in realistic deep submicron partially-depleted SOI technology.- Electrochemical and Solid State Letters, vol. 5, n° 5, p. G29-G31, 2002

Munteanu D., Ionescu A.M.- Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs.- IEEE Transactions on Electron Devices, vol. 49, p. 1198-1205, 2002

Munteanu D., Le Carval G.- Assessment of anomalous behavior in hydrodynamic simulation of CMOS bulk and partially-depleted SOI devices.- Journal of the Electrochemical Society, vol. 149, p. G574-G580, 2002

Nicolas M., Deschamps A.- Precipitate microstructure in the HAZ of Al-Zn-Mg MIG-welds, evolution during post-welding heat treatments.- Materials Science Forum 396-402, 1561. (2002)

Niquet Y.M., Delerue C., Allan G., Lannoo M.- Interpretation and theory of tunneling experiments on single nanostructure.- Physical Review B, vol. 65, p. 165334-, 2002

Ottaviani L., Lazar M., Locatelli M.L., Chante J.P., Heera V., Skorupa W., Voelskow M., Torchio P.- Annealing Studies of Al-implanted 6H-SiC in an induction furnace.- Mater. Sc. Eng. B. 91/92, 325-328 (2002)

Ottaviani L., Lazar M., Locatelli M.L., Planson D., Chante J.P., Dubois C.- Characteristics of Aluminum-Implanted 6H-SiC Samples After Different Thermal Treatments.- Mater. Sc. Eng. B. 90, 301-308 (2002)

Ouslimani A., Gaubert J., Hafdallah H., Birafane A., Pouvil P., Leier H.- Direct determination of linear HBT model parameters using nine analytical expression bloks.- IEEE Transactions on Microwaves Theory and Techniques, vol. 50, n° 1, 2002

Palais O., Yakimov E.B., Martinuzzi S.- Minority carrier lifetime scan maps applied to iron concentration mapping in silicon wafers.- Mater. Sc. Eng. B- 91-92, 216-19 (2002)

Panicaud B., Renault P.O., Grosseau-Poussard J.L., Dinhut J.F., Thiaudiere D., Gailhanou M. Measurement of stress in phosphated-iron oxide layers by in-situ diffraction of synchrotron radiation.- Mat. Science Forum, 404-407, 809-14(2002)

Paret V., Boher P., Geyl R., Vidal B., Putero-Vuaroqueaux M., Quesnel E., Robic J.Y.- Characterization of optics and masks for EUV lithography.- Microelectronic Engineering, vol. 61-62, p.145-155, 2002

Parmentier R., Lemarchand F., Cathelino M., Lesquine M., Amra C., Labat S., Bozzo S., Bocquet F., Charai A., Thomas O.- Piezoelectric tantalum pentoxide studied for optical tunable application.- Applied Optic 41, 3270-3276 (2002)

Patrone L., S. Palacin, J.-P. Bourgoin, J. Lagoute, T. Zambelli et S. Gauthier.- Direct comparison of the electronic coupling efficiency of Sulfur and Selenium anchoring groups for molecules adsorbed onto gold electrodes.- Chemical Physics, vol. 281, p. 325-332, 2002

Perichaud I., Yakimov E.B., Martinuzzi S., Dubois C.- Gold gettering by H+ or He ++ ion implantation induced cavities and defects in Cz silicon wafers.- Sol. Stat. Phenom. 82-84, 297-302 (2002)

Pichaud B., Burle N., Putero-Vuaroqueaux M., Curtil C.- Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films.- J. of Phys. Cond. Matter. 14, 13255 (2002)

Priester L., Décamps B., Poulat S., Thibault J.- Interfacial defects and plastic deformation.- Ann. Chim. Sci. Mat. 27 , S77-88 (2002)

Putero-Vuaroqueaux M., Faïk H. and Vidal B.- A comparative study of the interfacial roughness correlation and propagation in Mo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule and zerodur substrates.- Journal of Physics : Condensed Matter, vol.14, p.8955-8968, 2002

Rahajandraibe W., Dufaza C., Auvergne D., Cialdella B., Majoux B., Chowdhury V.- Bandgap reference optimisation from on-chip EG, XTI value extraction.- International Journal of Analog Integrated Circuits and Signal Processing, vol. 33, n° 2, p. 85-94, 2002

Regula G., Elbouayadi R., Pichaud B., Ntsoenzok E.- Nickel gettering in silicon: role of oxygen.- Sol. Stat. Phenom. 82-84, 355-360 (2002)

Rivero C., Bostrom O., Gergaud P., Thomas O., Boivin P., Mazuelas A.- In situ study of strain evolution during thin film Ti/Al(Si,Cu) reaction using synchrotron radiation .- Microelectronic Engineering 64, 81 (2002)

Rogez J., Garnier A., Knauth P.- Solution calorimetric investigation of AgCl-AgI ionic conductor composites at 298 K : observation of metastable AgI modifications .- J. Phys. Chem. of Solids 63, 9-14 (2002)

Roussel J.M., Bellon P.- Self-diffusion and solute diffusion in alloys under irradiation: Influence of ballistic jumps.- Phys. Rev. B 65, 144107, (2002)

Sanz N., Lomello-Taffin M., Valmalette J.C., Isa M., Galez Ph.- Preparation and characterization of Au/ZrO2 nanoparticles obtained by oxidation of Zr-Au alloy.- Materials Science & Engineering C, vol. 19, n° 1-2, p. 79-83, 2002

Schmidt U., Eisenschmidt C., Weiss M., Zahra C.Y., Zahra A.-M.- Decomposition of La- and Dy-rich amorphous alloys.- J. Non-Cryst. Solids 297, 1-12 (2002)

Schmidt U., Zahra A.-M.- Structure evolution of amorphous AlLnT alloys.- Recent Res. Devel. Mat. Sci. 3, 401-425 (2002)

Schülli T., Sztucki M., Chamard V., Metzger T. H., Schuh D.- Anomalous x-ray diffraction on InAs/GaAs quantum dot systems,.- Appl. Phys. Lett. 81, 448 (2002)

Seger J., Zhang S.L., Mangelinck D. and Radamson H. H.- Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex.- Applied Physics Letters, vol. 81, p. 1978-, 2002

Seguin J.L., Lambert-Mauriat C., Aguir K., Bendahan M., Jacolin C., Lauque P.- Degradation during sputter deposition of solid electrolyte thin films for microsystems.- Thin Solid Films, vol. 422, p. 87-91, 2002

Stesmans A., Afanas’ev V.V., Houssa M.- Electron spin resonance analysis of interfacial Si dangling bond type defects in stack of ultrathin SiO2, Al2O3, and ZrO2 layers on (100)Si.- Journal of Non-Crystalline Solids, vol. 303, p. 162-166, 2002

Texier M., Proult A., Bonneville J., Rabier J., Baluc N., Cordier P.- Microstructures of icosahedral AlPdMn quasicrystals deformed at room temperature in an anisotropic confining medium.- Phil.Mag. Lett., 82, 659 (2002)

Thomas O., Müller P., Labat S., Gergaud P.- Influence of segregation on the measurement of stress in thin films.- J. Appl. Phys. 91, 2951 (2002)

Thommerel E., Valmalette J.C., Musso J., Villain S., Gavarri J.R., Spada D.- Relations between microstructure, electrical percolation and corrosion in metal – insulator composites.- Materials Science & Engineering A, vol. 328, n° 1-2, p. 67-79, 2002

Valmalette J.C., Isa M.- Size effects on the stabilization of ultrafine zirconia nanoparticles.- Chemistry of Materials, vol. 14, n° 12 , p. 5098-5102, 2002

Valmalette J.C., Isa M., Passard M., Lomello-Tafin M.- Ultra-fast nanostructuring oxidation of crystallized intermetallic ZrAu at 25°C.- Chemistry of Materials, vol. 14, n° 5, p. 2048-2054, 2002

Ventura L., Pichaud B., Lanois F.- Impact of a cooling process on the dopant activity of platinum in silicon.- Sol. Stat. Phenom. 82-84, 412-422 (2002)

Villain S., Ch. Leroux, J. Musso, J.R. Gavarri, A. Kopia, M. Klimczak, J. Kusinski.- Nanoparticles and thin films of cerium dioxides: relations between elaboration process and microstructure.- Journal of Metastable and Nanocrystalline Materials, n° 12, p. 59-69, 2002

Villain S., Pischedda M.H., Nigrelli E., Godiart F., Gavarri J.R.- Degradation mechanism of composite electrodes subjected to alternating potentials : modelling and protection.- Corrosion Science, vol. 44, n° 4, p.657-673, 2002

Vrel D., Girodon-Boulandet N., Paris S., Mazue J.F., Couqueberg E., Gailhanou M., Thiaudiere D., Gaffet E., Bernard F.- A new experimental setup for the time resolved X-ray diffraction study of self-propagating high-temperature synthesis.- Rev. of Scient. Instruments, 73, no.2, 422-8 (2002)

Xerri B., Cavassilas J.F., Borloz B.- Passive Trajectography in underwater acoustics.- Signal Processing, vol. 82, p. 1067-1085, 2002

Xu Z., Houssa M., De Gendt S., Heyns M.M.- Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks.- Applied Physics Letters, vol. 80, p. 1975-1978, 2002

Xu Z., Houssa M., Naili M., Carter R., De Gendt S., Heyns M.M.- Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks.- Journal of Applied Physics, vol. 91, p. 10127-10129, 2002

Zahra A.-M., Zahra C.Y.- Comment on "Positron lifetime study of an Al-1.7 at.% Mg-1.1 at.% Cu alloy".- Phil. Mag. Lett. 82, 9-12 (2002)

Zhao C., Richard O., Bender H., Houssa M., Carter R., De Gendt S., Heyns M.M., Young E., Tsai W., Roebben G., Van Der Biest O., Haukka S.- Thermostability of the amorphous structure of zirconium aluminate high-k layers.- Journal of Non-Crystalline Solids, vol. 303, p. 144-149, 2002


2003

Abel M., Dimitriev A., Fasel  R., Lin N., Barth J.V., Kern  K.-  Scanning tunneling microscopy and x-ray photoelectron diffraction investigation of C_60 films on Cu(100).- Physical Review B, vol. 67, p. 245407-, 2003

Alfonso C., Fares L., Huiban Y., Gallet D., Ismeur M., Charai A.- Interfacial reactions in relation with adhesion failures in Al/TiN/Ti/SiO2 and Al/TiN/Ti/borophosphososilicate glass systems, .- Eur. Phys. J.: Appl. Phys. 22, 3 (2003)

Ananou B., Regnier S., Ksari Y., Marfaing J., Stepanov A., Touchard A., Rochette Y.- Detection of diluted marine tertiary tephra by electron spin resonance and magnetic measurements.- Geophysical Journal International, vol. 155, n° 2, p. 341-349, 2003

Autran J.L. and Munteanu D.- Tunneling component of the ballistic current in ultimate double-gate devices.- Electrochemical and Solid-State Letters, vol. 6, p. G95-G97, 2003

Autran J.L., Munteanu D.- Les architectures innovantes sur silicium mince : un second souffle pour la loi de Moore ? Revue de l’Electricité et de l’Electronique, n° 8, p. 21-31, 2003,

Autran J.L., Munteanu D., Dinescu R. and Houssa M.- Stretch-out of high-permittivity MOS capacitance voltage curves resulting from a lateral non-uniform oxide charge distribution.- Journal of Non-Crystalline Solids, vol. 322, n°  1-3, p. 219-224, 2003

Badèche T., Gagou Y., Roucau C., Frémy M.A., Mezzane D., Saint-Grégoire P.- HREM Study of the room temperature phase of PbK2LiNb5O15.- Ferroelectrics, vol. 290, p. 83-90, 2003

Barthélemy H.- Impedance projection based transconductance amplifier.- Electronics Letters, vol. 39, n° 14, p. 1027-1028, 2003

Barvinschi F., Stelian C., Delannoy Y., Mangelinck-Noël N., Duffar T.- Modeling the multi-crystalline silicon ingot solidification process in a vertical square furnace.- Journal of Optoelectronics and Advanced Materials, vol. 5, n° 1, p. 293-300, 2003

Bayle-Guillemaud P., Radtke G., Sennour M.- Electron spectroscopy imaging to study ELNES at a nanoscale.- J. of Microscopy, 210, (2003), 66

Bendahan M., Lauque P., Seguin J.L., Aguir K., Knauth P.- Development of an ammonia gas sensor.- Sensors and Actuators B, vol. 95, p. 170-176, 2003

Bergman C., Bichara C., Gaspard J.P., Tsuchiya Y.- Experimental investigation of the water-like density anomaly in liquid Ge15Te85 eutectic alloy.- Physical Review B, vol. 67, p. 104202-, 2003

Bernardini J., Girardeaux C., Rolland A. and Beke D.L.- Effect of grain boundary segregation and migration on diffusion profiles : analysis and experiments. Interface Science, vol. 11, p. 33-40, 2003

Bernardini J., Lexcellent C., Daroczi L., Beke D.L.- Ni diffusion in near equiatomic Ni-Ti and Ni-Ti (6Cu) alloys.- Philosophical Magazine, vol. 83, p. 329-338, 2003

Bescond M., Lannoo M., Goguenheim D. and Autran J.L.- Towards a full microscopic approach to the modeling of transistors with nanometer dimensions.- Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 160-167, 2003

Beszeda I. , Imre A.W. , Gontier-Moya E.G., Moya F., Beke D.L., Si Ahmed A.- Kinetics of morphological changes in nanoscale metallic films followed by Auger Electron.- Diffusion, Segragation and Stresses in Materials, Defect and Diffusion Forum, vol. 216-217, p. 269-274 , 2003

Beszeda I., Gontier-Moya E. G., Beke D. L.- Investigation of mass transfer surface self diffusion on palladium.- Surface Science, vol. 547 p.229-238, 2003

Beszeda I., Szabo I.A., Gontier-Moya E.G.- Auger Electron Spectroscopy determination of surface self-diffusion coefficients from growth of voids in thin deposited films.- Applied Surface Science, vol. 212-213, p. 787-791, 2003

Bocquet F., Gergaud P. and Thomas O.- X-ray diffraction from inhomogeneous thin films of nanometre thickness : modelling and experiment .- J. Appl. Cryst. 36 , 154 (2003)

Bravaix A., Goguenheim D., Revil ., Rubaldo L.- Efficiency of interface trap generation under hole injection in 2.1nm thick gate-oxide P-MOSFET's. – Journal of Non-Crystalline Solids,  vol. 322, p.139-146, 2003

Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E.- Carrier injection efficiency for the reliability study of  3.5-1.2nm thick gate-oxide CMOS technologies.- Microelectronic Reliability, vol. 43, p. 1241-1246, 2003

Canet P., Bouchakour R., Lalande F., Mirabel J.M.- EEPROM cell design : paradoxical choice of the coupling ratio.- Journal of Non-Crystalline Solids, vol. 322, p. 246-249, 2003

Casadei B., Husson D., Le Normand J.P., Cunin B., Hu Y.- Caractérisation d’une caméra rapide CMOS pour la détection d’impulsions lumineuses brèves.- Revue d’Electricité et d’Electronique, p. 33-38, 2003

Casadei B., Le Normand J.P., Cunin B., Hu Y.- Design and characterisation of fast CMOS multiple linear array For nanosecond light pulses detection.- IEEE Transactions on Instrumentation and Measurement, vol. 52, n° 6, p. 1892-1897, 2003

Chamard V., Metzger T. H., Sztucki M., Holý V., Tolan M., Bellet-Amalric E., Adelmann C., Daudin B., Mariette H.- On the driving forces for the vertical alignment in nitride quantum dot multilayers,.- Europhys. Lett. 63, 268 (2003)

Chamard V., Metzger T. H., Sztucki M., Tolan M., Bellet-Amalric E., Daudin B., Adelmann C., Mariette H.- Anomalous diffraction in grazing incidence to study the strain induced by GaN quantum dots stacked in an AlN multilayer.- Nuclear Instruments and Methods B 200, 95 (2003).-

Chatain S., Gueneau C., Labroche D., Rogez J., Dugne O.- Thermodynamic assessment of the Fe-U binary system .- J. of Phase Equilibria 24 , 122-131 (2003)

Chenevier B., Chaix- Pluchery O., Gergaud P., Thomas O., LaVia F.- Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films,.- J. Appl. Phys. 94 , 7083 (2003)

Chenevier B., Chaix-Pluchery O., Gergaud P., Thomas O., Madar R., LaVia F.- First stages of silicidation in Ti/Si thin films.- Microelectronic Engineering 70 , 455 (2003)

Choukroun J., Richard J.L., Stepanov A.- Electron paramagnetic resonance in weakly anisotropic Heisenberg magnets with a symmetric anisotropy.- Physical Review B, vol. 68, n° 14, p. 144415-, 2003

Coulet M.-V., Bellissent R., Bichara C.- Séparation de phases dans les liquides covalents : couplage entre structure et thermodynamique.- J. Phys. IV , 111, 147-166 (2003)

Coulet M.-V., Simonet V., Calzavara Y., Testemale D., Hazemann J.-L., Raoux D., Bley F., Simon J.-P.- Correlation between density variation and electrical conductivity in supercritical selenium probed by Small Angle X-ray Scattering.- J. Chem. Phys. 118, 11235-8 (2003)

Daré A.M., Hayn R. and Richard J.L.- Orbital and spin exchange in LiNiO2.- Europhysics Letters, vol. 61, p. 803-, 2003

Debierre J.M., Karma A., Celestini F., Guérin R.- Phase-field approach for faceted solidification.- Physical Review E, vol. 68, p. 041604-1-13, 2003

Decossas S., Patrone L., Bonnot A.M., Comin F., Derivaz M., Barski A. , Chevrier J.- Nanomanipulation by atomic force microscopy of carbon nanotubes on a nanostructured surface.- Surface Science, vol.  543, p. 57-62, 2003

Delerue C., Allan G., Lannoo M.- Dimensionality-dependent self-energy corrections and exchange-correlation potential in semiconductor nanostructures.- Physical Review Letters, vol. 90, n° 7, p. 076803-, 2003

Delerue C., Lannoo M., Allan G.- Concept of dielectric constant for nanosized systems.- Physical Review B, vol. 68, n° 11, p. 115411-, 2003

Den-Auwer C., Drot R., Simoni E., Conradson S.D. Gailhanou M., de-Leon J.M.- Grazing incidence XAFS spectroscopy of uranyl sorbed onto TiO2 rutile surfaces.- New Journal of Chemistry. 27 (3) 648-655 (2003)

Dorbolo S., Ausloo M., Vandevalle N., Houssa M.- Aging process of electrical contacts in granular matter.- Journal of Applied Physics, vol. 94, n° 12, p. 7835-7838, 2003

Drechsler S.L., Malek J., Hayn R., Knupfer M., Moskvin A.S., Fink J.- Low-energy excitations in an undoped cuprate-description beyond the standard pdsigma-model ? - International Journal of Modern Physics B, vol. 17, p. 3324-, 2003

Egry I., Herlach D., Kolbe M., Ratke L., Reutzel S., Perrin C., Chatain D.- Surface tension, phase separation, and solidification of undercooled Cobalt-Copper alloys.- Advanced Engineering Materials, vol. 5, p. 819-, 2003

Ersen O., Pierron-Bohnes V., Tuilier M-H., Pirri C., Khouchaf L., Gailhanou M.- Short- and long-range order in iron and cobalt disilicides thin films investigated by the diffraction anomalous fine structure technique.- Phy. Rev. B, 67, no.9,. 94116-1-12(2003)

Ersen O., Tuilier M-H., Thomas O., Gergaud P., Lagarde P.- Cubic local order around Al and intermixing in short period AlN/TiN multilayers studied by Al K-edge extended x-ray absorption fine structure spectroscopy and x-ray diffraction.- Appl. Phys. Letters 82, 3659 (2003)

Escoubas L., Huguet-Chantôme P., Jelínek M., Flory F., Drouard E., Lancok J., Simon J.J., Mazingue T.- Optical and electro-optical properties of pulse laser deposited PLZT thin films.- Optical Engineering, vol. 42, n° 12, p. 3584-, 2003

Escoubas L., Simon J.J., Loli M., Berginc G., Flory F., Giovannini H.- An antireflective silicon grating working in the resonance domain for the near infrared spectral region.- Optics Communications, vol. 226, p. 81-88 , 2003

Gas P.- François d’Heurle : Microelectronics ands basic research in materials science.- Microelectronics Engineering, vol. 70, p. 142-, 2003

Gas P., Girardeaux C., Mangelinck D., Portavoce A.- Reaction and diffusion at interfaces of micro and nanostructured materials.- Material Science and Engineering B, vol. 101, p. 43-, 2003

Gergaud P., Megdiche M., Thomas O., Chenevier B.- Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction .- App.Phys. Lett. 83, 1334 (2003)

Gergaud P., Thomas O., Chenevier B.- Stresses arising from a solid state reaction between palladium films and Si(001) investigated by in situ combined X-ray diffraction and curvature measurements.- J. Appl. Phys. 94, 1584 (2003)

Gillet E., Lemire C., Gillet M.- Structural and electronic features of metal-oxide interfaces.- Key Engineering Materials, vol 253, p.1-16, Trans. Tech. Publications, Switzerland, 2003

Gillet M., Lemire C., Gillet E.- Influence of the surface structure on the growth of a metallic deposit on oxide Au / WO3.- Engineering Materials, vol. 253, p. 103-, 2003

Gillet M., Lemire C., Gillet E., Aguir K.- The role of surface oxygen vacancies upon WO3 conductivity.- Surface Science, vol. 532, p. 519-525, 2003

Gillet M., Masek K., Lemire C.- Oxidation of tungsten nanoclusters.- Thin Solid Films, vol. 444, p. 9-, 2003

Goguenheim D., Trapes C., Bravaix A.- Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS.- Journal of Non-Crystalline Solids, vol. 322, p.183-190, 2003

Gutt C., Gadheri T., Chamard V., Madsen A., Seydel T., Tolan M., Sprung M., Grübel G., Sinha S. K.- Observation of heterodyne mixing in surface XPCS experiments, .- Phys. Rev. Lett. 91, 076104 (2003)

Hammi H., Musso J.A., M'Nif A., Rokbani R.- Solubility phase diagrams coupled to computer science (DPAO). Part II : Applied to isothermal evaporation of Tunisian natural brines.- Calphad-Computer Coupling of Phase Diagrams and Thermochemistry, vol. 27, n° 1, p. 71-77, 2003

Houssa M., Autran J.L., Heyns M.M., Stesmans A.- Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures.- Applied Surface Science, vol. 212-213, p. 749-752, 2003

Houssa M., Bizzari C., Autran J.L.- Simulation of threshold voltage instabilities in HfySiOx and SiO2/HfySiOx-based field-effect transistors.- Applied Physics Letters, vol. 83, p. 5065-5067, 2003

Houssa M., Parthasarathy C., Espreux N., Autran J.L., Revil N.- Impact of nitrogen on negative bias temperature instability in p-channel MOSFETs.- Electrochemical and Solid-State Letters, vol. 6, p. G146-G148, 2003

Houssa M., Parthasarathy C., Espreux N., Revil N. and Autran J.L.- Model for negative bias temperature instability in p-MOSFETs with ultrathin oxynitride layers.- Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 100-104, 2003

Kaouache B., Gergaud P., Thomas O., Bostrom O., Legros M.- Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al 0.5%Cu 1%Si thin films .- Microelectronic Engineering 70 , 447 (2003)

Katan C., Rabiller P., Lecomte C., Guezo M., Oison V., Souhassou M.- Numerical computation of critical properties and atomic basins from three-dimensional grid electron densities.- Journal of Applied Crystallography A, vol. 36, p. 65-73, 2003

Klimczak-Chmielowska M., Chmielowski R., Kopia Z., Kusinski J., Leroux C., Villain S., Saiztek S., Gavarri J.R.- The influence of copper on microstructure and catalytic properties of CeO2 thin films deposited by pulsed laser deposition.- High Temperature Material Processes, vol. 7, n° 3, p. 333-342, 2003

Kovacevic Z., Plakida N.M., Hayn R.- Resonant states in high temperatures superconductors with impurities.- Theoretical and Mathematical Physics, vol. 136, p. 1155-, 2003

Kuzian R.O., Hayn R., Barabanov A.F.- Dispersion of the dielectric function of a charge-transfer insulator.- Physical Review B, vol. 68, p. 195106-, 2003

Kuzian R.O., Hayn R., Richter J.- Recursion method and one-hole spectral function of the Majumdar-Ghosh model.- European Physical Journal B, vol. 35, p. 21-, 2003

Laffont R., Masson P., Bernardini S., Bouchakour R., Mirabel J.M.- A new floating compact model applied to Flash memory cell.- Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 250-255, 2003

Lannoo M., Delerue C., Allan G., Niquet Y.M.- Confinement effects and tunnelling through quantum dots.- Philosophical Transactions of the Royal Society  of London A, vol. 361, n° 1803, p. 259-272, 2003

Lay S., Thibault J., Hamar-Thibault S.- Structure and role of the interfacial layers in VC rich WC-Co cermets.- Phil. Mag, 83, 117(-1190 (2003)

Lazar M., Raynaud C., Planson D., Chante J.P., Locatelli M.L., Ottaviani L., Godignon P.,.- Effect of Ion implantations parameters on Al dopant redistribution in SiC after annealing : Defect recovery and electrical properties of p-type layers.- J. Appl. Phys. 94, 2992-2998 (2003)

Lee P.S., Pey K.L., Mangelinck D., Ding J., Chan L.- In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime < 400 degrees C.- Solid State Communications, vol. 128, n° 9-10, p. 325-328, 2003

Léonard S., Madigou V., Villain S., Nigrelli E. and Nihoul G.- Characterisation of thin films of the ferroelectric material SrBi2Ta2O9 obtained by sol-gel methods on Sr2RuO4 (001) single crystal substrate.- Ferroelectrics, vol. 288, p. 1-9, 2003

Li J. B., Record M.C., Tedenac J.C.- A thermodynamic assessment of the InSe system.- Zeitschrift für Metallkunde, 94, 381-389 (2003)

Li J. B., Tedenac J.C. , Record M.C.,.- Thermodynamic analysis of the Ga-Ti system.- Journ. of Alloys and Compounds, 358, 133-141(2003)

Liebault J., Zarbout K., Moya G., Kallel A.- Advanced measurement techniques of space- charge induced by an electron beam irradiation in thin dielectric layers.- Journal of Non-Crystalline Solids, vol.322, p. 213-218, 2003

Liebault J., Zarbout K., Moya-Siesse D., Bernardini J., Moya G.- New technique to characterise thin oxide films under electronic irradiation.- Applied Surface Science, vol. 212-213, p. 809-814, 2003

Liu C., Ntsoenzok E., Delamare R., Alquier D., Regula G.- The role of a top oxide layer in cavities formed by MeV He implantation into Si.- Europ. Phys. J. : Appl. Phys. 23, 45-48 (2003)

Lombardo P., Avignon M.- Disordered local moments formation in high-dimensional strongly correlated materials.- Physica B, vol. 337, p. 186-192, 2003

Loubens A. , Fortunier R., Fillit R., Thomas O.- Simulation of local mechanical stresses in lines on substrate .- Microelectronic Engineering 70, 455 (2003)

Mangelinck D., Gas P., T. Badeche T., Taing E., Nemouchi F., Perrin-Pellegrino C., Niel S., Mirabel J.-M., Farez L., Albarede P.H.- Formation of C49-TiSi2 in flash memories : a nucleation controlled phenomenon ? - Microelectronics Engineering, vol. 70, p. 220-, 2003

Marhag C., Said H., Satre P., Favotto C., Rogez J.- Etude thermodynamique du diagramme d'équilibre LIPO3-Pb(PO3)2. Conditions d'élaboration et métastabilité .- Journal of Thermal Analysis and Calorimetry 74, 275-285 (2003)

Martinuzzi S., Périchaud I., Warchol F.,.- Hydrogen passivation of defects in multicrystalline silicon solar cells.- Solar Energy Materials and SolarCells 80, 343-54 (2003)

Maurel C., Coratger R., Ajustron F., Beauvillain J., Gerard P.- Electrical characteristics of metal/semiconductor nanocontacts using light emission in a scanning tunneling microscope.- Journal of Applied Physics, vol. 94, n° 3, p. 1979-1982, 2003

Maurel C., Coratger R., Ajustron F., Seine G., Pechou R., Beauvillain J.- Effect of multiple tips on light emission induced by STM from gold nanostructures.- Surface Science, vol. 529, n° 3,p. 359-364, 2003

Maurel C., Coratger R., Ajustron F., Seine G., Pechou R., Beauvillain J.- Photon emission from STM of granular gold in UHV : comparison with air and study of spectra shifting with tip position.- European Physical Journal - Applied Physics, vol. 21, n° 2, p. 121-126, 2003

Megdiche M., Gergaud P., Curtil C., Thomas O., Chenevier B., Mazuelas A.- In situ study of stress evolution during solid state reaction of Pd with Si (001) using synchrotron radiation .- Microelectronic Engineering 70, 436 (2003)

Mliki N., Kaabi H., Bessaïs B., Yangui B., Saikaly W., Dominici C., Charai A.- Morphology and Microstructure at different scales of Porous Silicon prepared by a non conventional technique.- Journal of Nanoscience ans Nanotechnology 3, 413-19 (2003)

Moskvin A.S., Malek J., Knupfer M., Neudert R., Fink J., Hayn R., Drechsler S.-L., Motoyama N., Eisaki H., Uchida S.- Evidence for two types of low-energy charge transfer excitations in Sr2CuO3.- Physical Review Letters, vol. 91, p. 037001-, 2003

Moya G., Kansy J., Si Ahmed A., Liebault J., Moya F., Goeuriot D.- Positron lifetime measurements in sintered alumina.- Physica Status Solidi (a), vol.198, n°1, p.215-223, 2003

Muller C.- Diffraction des neutrons : principe, dispositifs expérimentaux et applications.- in "Ecole thématique de la Société Française de la Neutronique : Neutrons et Matériaux", Journal de Physique IV, vol. 103, p. 101–132, 2003

Muller C., Jacob F., Gagou Y., Elkaïm E.- Cation disorder, microstructure and dielectric response of ferroelectric SBT ceramics.- Journal of Applied Crystallography, vol. 36, n° 3, p. 880–889, 2003

Munteanu D. and Autran J.L.- Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices.- Solid-State Electronics, vol. 47, n° 7, p. 1219-1225, 2003

Munteanu D.,  Autran J.L., Decarre E. and Dinescu R.- Modeling of quantum ballistic transport in double-gate devices with ultra-thin oxides.- Journal of Non-Crystalline Solids, vol. 322, n°  1-3, p. 206-212, 2003

Musso J.A.- Solubility phase diagrams coupled to computer science (DPAO). Part I : Theory of the sequential representation.- Calphad-Computer Coupling of Phase Diagrams and Thermochemistry, vol. 27, n° 1, p. 65-69, 2003

Nguyen Thi H., Drevet B., Debierre J.M., Camel D., Dabo Y., Billia B.- Preparation of the initial solid – liquid interface and melt in directional solidification.- Journal of Crystal Growth, vol. 253, p. 539, 2003

Nguyen Thi H., Jamgotchian H., Gastaldi J., Härtwig J., Schenk T., Klein H., Billia B., Baruchel J., Dabo Y.- Preliminary in situ and real time study of directional solidification of metallic alloys by X-ray imaging techniques.- Journal of Physics D : Applied Physics, vol. 36, p.83-86, 2003

Nicolas M., Deschamps A.- Characterisation and modelling of precipitate evolution in an Al-Zn-Mg alloy during non-isothermal heat treatment.- Acta Materialia 51, 6077-6094 (2003)

Nyéki J., Erdélyi G., Lograsso TA., Schlagel DL., Beke D.L.- Ni volume diffusion in Ni2MnGa.- Intermetallics, vol. 11, p. 1075-1077, 2003

Nyeki J., Girardeaux C, Erdelyi G., Rolland A, Bernardini J.- Equilibrium surface segregation enthalpy of Ge in concentrated amorphous SiGe alloys.- Applied Surface Science, vol. 212-213, p. 244-248, 2003

Oison V., Katan C., Rabiller P., Souhassou M., Koenig C.- Neutral-ionic phase transition : a thorough ab initio study of TTF-CA.- Physical Review B, vol. 67, n° 3, p. 035120-, 2003

Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterization of 6H and 4H-SiC polytypes by cathodoluminescence and X-Ray Topography.- J. of Physics : Condensed Matter 15, 1 (2003)

Oualla M., Zegzouti A., Elaatmani M., Daoud M., Mezzane D., Gagou Y., Saint-Grégoire P.- New gadolinium based ferroelectric phases derived from the tetragonal tungsten bronze (TTB).- Ferroelectrics, vol. 291, p. 133-139, 2003

Oughaddou H., Léandri C., Aufray B., Girardeaux C., Bernardini J., Lelay G., Bibérian J.P., Barrett N.- Growth and dissolution kinetics of Au/Pb(111) : an AES-LEED study.- Applied Surface Science, vol. 212-213, p. 291-295, 2003

Palais O., Arcari A.- Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers .- J. Appl. Phys. 93, 4686-4690 (2003)

Palais O., Clerc L., Arcari A., Stemmer M., Martinuzzi S.- Mapping of minority carrier lifetime and mobilities in imperfect silicon wafers.- Mat. Science and Engineering B 102, 184-188 (2003)

Palmino F., Ehret E., Mansour L., Labrune J.-C. , Lee G., Kim H., Themlin J.M.- 3x2 reconstruction of the Sm/Si(111) interface.- Physical Review B, vol. 67, p. 195413-, 2003

Paris S., Jauffret C.- Frequency line tracking using HMM-based schemes.- IEEE Transactions on Aerospace and Electronic Systems, vol 39, n° 2, p. 439-449, 2003

Patrone L., Palacin S., Bourgoin J.-P.- Direct comparison of the electronic coupling efficiency of sulfur and selenium alligator clips for molecules adsorbed onto gold electrodes.- Applied Surface Science, vol. 212, p.446-451, 2003

Patrone L., Palacin S., Charlier J., Armand F., Bourgoin J.P., Tang H., Gauthier S.- Evidence of the key role of metal-molecule bonding in metal-molecule-metal transport experiments.- Physical Review Letters, vol. 91, n° 9,  p. 096802, 2003

Portavoce A., Berbezier I., Ronda A.- Effects of Sb on Si/Si and Ge/Si growth process.- Materials Science and Engineering B, vol. 101, n° 1-3, p. 181-185, 2003

Quintana C., Menendez J.L., Huttel Y., Lancin M., Navarro E., Cebollada A.- Structural characterization of Fe (110) islands grown on alpha-Al2O3 (0001).- Thin Solids Films 434, 228-238 (2003)

Radtke G., Epicier T., Bayle-Guillemaud P., Le Bossé J.C.- N-K ELNES study of anisotropy effects in hexagonal AlN.- J. of Microscopy, 210, 60 (2003).- Record M.C., Izard V., Bulanova M., Tedenac J.C. , .- Phase transformations in the Zn-Cd-Sb system.- Intermetallics, 11, 1189-1194 (2003)

Raymond R., Laugier J.M., Schäfer S., Albinet G.- Dielectric resonances in disordered media.- European Physical Journal B, vol. 31, n° 3, p. 355-364, 2003

Record M.C., Daouchi B., M., Tedenac J.C. , .- Phase diagram of the Pb-PbSe-InSe-In sub-system.- Journ. of Alloys and Compounds, 361, 157-159 (2003)

Record M.C., Pascal C., Frety N., M., Tedenac J.C. , Marin-Ayral R.M.,.- Optimisation procedure of the NiAl combustion synthesis under high-gas pressure in repairing Ni-based superalloys.- International Journal of SHS, 12, 303-312 (2003)

Renard S., Boivin P. and Autran J.L.- New oxide quality characterization for charge leakage applications using the floating-gate technique.- Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 179-182, 2003

Richard S., Cavassilas N., Aniel F., Fishman G.- Energy-band structure in strained silicon : A 20-band k-p and Bir-Pikus Hamiltonian model.- Journal of Applied Physics, vol. 94, n° 3, p. 1795-1799, 2003

Richard S., Cavassilas N., Aniel F., Fishman G.- Strained silicon on SiGe : Temperature dependence of carrier effective masses.- Journal of Applied Physics, vol. 94, n° 8, p. 5088-5094, 2003

Robach Y., Abel M., Porte L.- Initial stages of Pd deposition on Au(110) : A STM, LEED and AES study.- Surface Science, vol. 526, p. 248-256, 2003

Saikaly W., Bano X., Issartel C., Rigaut G., Charai A.- Powerful microscopy techniques available for resolving complex microstructure in multiphase steels, .- Rev. Met. Paris 5, 513-521(2003)

Schmidt U., Eisenschmidt C., Syrowatka F., Bartusch R., Zahra C.Y., Zahra A.-M.- Structure development in amorphous Al-La alloys.- J. Phys.: Condens. Matter 15, 385-413 (2003)

Sorbier J.P., Croci S., Imbert B., Plossu C.- Model of leakage current induced by dynamic stress in thin EEPROM tunnel oxides.- Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 122-128, 2003

Sort J.., Zhylyaev A., Zielinska M., Nogues J., Surinach S., Thibault J. and Baro M. D.- Microstructural effects and large microhardness in Co processed by high pressure torsion consolidation of ball milled powders.- Acta Materiala, 151, 6385-6393 (2003)

Souifi A., Brounkov P., Bernardini S., Busseret C., Militaru L., Guillot G. and Baron T.- Study of trap centres in silicon nanocrystal memories.- Materials Science and Engineering B, vol. 102, n° 1-3, p. 99-107, 2003 

Stoneham A.M., Lannoo M., Ridley B.K.- Confinement effects and tunnelling through quantum dots. Discussion.- Philosophical Transactions of the Royal Society  of London A, vol. 361, n° 1803, p. 272-273, 2003

Sztucki M., Schülli T. U., Metzger T. H., Chamard V., Schuster R., Schuh D.- Strain analysis of a quantum wire system produced by a cleaved edge overgrowth using grazing incidence diffraction.- Appl. Phys. Lett. 83, 872 (2003)

Texier M., Bonneville J., Proult A., Rabier J., Baluc N., Guyot P.- On the yield point of icosahedral AlCuFe quasicrystals,.- Scripta Materialia, 49, 41 (2003)

Texier M., Proult A., Bonneville J., Rabier J., Baluc N., Cordier P.- Microstructural analysis of i-AlPdMn quasicrystals deformed between room temperature and 300°C under confining pressure.- Scripta Materialia, 49, 47 (2003)

Thomas O., Shen Q., Schieffer P. , Tournerie N., Lepine B.- Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs .- Phys. Rev. Lett. 90, 017205 (2003)

Thommerel E., Madigou V., Villain S.,  Musso J.,  Valmalette J.C., Gavarri J.R.- Microstructure modifications and  modulated piezoelectric responses in PLZT / Al2O3 composites.- Materials Science & Engineering B, vol. 97, p. 74-82, 2003

Trapes C., Bravaix A., Goguenheim D.- Impact of carrier injection in 2.2nm-thick SiO2 oxides after first and substrate enhanced electron injection.- Journal of Non-Crystalline Solids, vol. 322, p.199-205, 2003

Vedda A., Autran J.L., Ferrari M., Munteanu D. and Passacantando M.- Preface.- Journal of Non-Crystalline Solids, vol. 322, n°  1-3, p. vii, 2003

Ventura L., Pichaud B., Vervisch W., Lanois F.- p-type doping by platinum diffusion in low phosphorus doped silicon.- Europ. Phys. J.: Appl. Phys. 23, 33 (2003)

Verlinden B., Zahra A.-M.- Precipitation hardenable Al-Mg-Cu alloys : Mechanical properties and hardening mechanisms.- Mater. Sci. Forum 426-432, 423-428 (2003)

Zaid L., Staraj R.- Radome protected low-profile GSM antenna on small ground plane.- Microwave and Optical Technology Letters, vol. 38, n° 4, p. 328-331, 2003

2004

Agliozzo S., Mancini L., Klein H., Schenk T., de Boissieu M., Nguyen Thi H., Gastaldi J., Hartwig J. and Baruchel J.- Using Synchroton radiation X-ray imaging to investigate porosity in quasicrystals.- ESRF Newsletter, vol. 40, p. 30-31, 2004

Aneflous L., Musso J., Villain S., Gavarri J.R., Benyaich H.- Effects of temperature and Nd composition on non-linear transport properties in substituted Ce1-xNdxO2-d cerium dioxides.- Journal of Solid State Chemistry, vol. 177, n° 3, p. 856-865, 2004

Avella A., Mancini F., Hayn R.- The energy-scale dependent composite operator method for the single-impurity Anderson model.- European Physical Journal B, vol. 37, p. 465-471, 2004

Barge D., Pichaud B., Joly J.P.- High temperature Si(001) surface defect evolution during extended annealing: experimental results and modelling.- Appl. Surf. Science 226, 341-6 (2004)

Bechade J-L., Brenner R., Goudeau P., Gailhanou M.- Determination of residual stresses in a zirconia layer by X-ray diffraction and by a micromechanical approach: thermoelastic anisotropy effect.- Revue de Metallurgie, 100, no.12, 1151-6 (2004)

Ben-Abdelkader S., Ben-Cherifa A. , Coulet M-V., Khattech I., Rogez J., Jemal M.- Enthalpy of formation of whitlockite Ca18Mg2H2(PO4)(14).- Journ. Therm. Anal. and Calorim., 77, 863-871 (2004)

Benarchid Y., Diouri A., BouKhari A., Aride J., Rogez J., Castanet R.- Elaboration and thermal study of iron-phosphorus substituted dicalcium silicate phase.- Cement and Concrete Research 34, 1873-1879 (2004)

Bendahan M., Boulmani R., Seguin J. L. and Aguir K.- Characterization of ozone sensors based on WO3 reactively sputtered films : influence of O2 concentration in the sputtering gas, and working temperature.- Sensors and Actuators B, vol. 100, n° 3, p. 323-327, 2004

Bergman C., Gas p., Mangelinck D.- Nanoscale effects on interfacial reactions.- Journal of the Electroanalytical Chemistry, vol. 573, n° 1, p. 71-75, 2004

Bernardini S., Masson P. and Houssa M.- Effect of fixed dielectric charges on tunneling transparency in MIM and MIS structures.- Microelectronic Engineering, vol. 72, n° 1-4, p. 90-95, 2004

Bernardini S., Masson P., Houssa M. and Lalande F.- Origin and repartition of the oxide fixed charges generated by electrical stress in memory tunnel oxide.- Applied Physic Letters, vol. 84, n° 21, p. 4251-4253, 2004

Bertaina S., Pashchenko V.A., Stepanov A., Masuda T., Uchinokura K.- Electron spin resonance in the spin-1/2 quasi-one-dimensional antiferromagnet with Dzyaloshinskii-Moriya interaction BaCu2Ge2O7.- Physical Review Letters, vol. 92, n° 5, p. 057203-1, 2004

Bescond M., Autran J.L., Munteanu D., Lannoo M.- Atomic-scale modeling of Double-Gate, MOSFETs using a tight-binding Green’s function formalism.- Solid-State Electronics, vol. 48, p. 567-574, 2004

Beszeda I., Szabó I. A., Gontier-Moya E.G.- Morphological evolution of thin gold films studied by Auger Electron Spectroscopy in beading conditions.- Applied Physics A, vol. 78, p. 1079-1084, 2004

Billia B., Gastaldi J., Grange G., Bergeon N., Nguyen Thi H., Jamgotchian H.- Cumulative mechanical moments and microstructure deformation induced by growth shape in columnar solidification.- Physical Review Letters, vol. 93, p. 126105, 2004

Boa D., Hassam S., Rogez J., Kotchi K. P.- The iron-antimony system: enthalpies of formation of the FeSb2 and e-FeSb phases.- Journal of Alloys and Compounds 365, 228-32 (2004)

Bocquet F., Bigault T., Alfonso C., Labat S., Thomas O., Charai A.- In situ stress measurements during the growth at different temperatures of Ag-Cu(111) multilayers.- J. Appl. Phys. 95, 1152-61 (2004)

Borel S., Arvet C., Bilde J., Harrison S., Louis D.- Isotropic etching of SiGe alloys with a high selectivity to similar materials.- MicroElectronic Engineering, vol. 73-74, p. 301-305, 2004

Bouad N., Record , J.C. Tedenac M.C., Marin-Ayral R.M.- Mechanical alloying of a thermoelectric alloy : Pb0.65Sn0.35Te.- Journ. of Sol. State Chemistry 177, 221-226 (2004)

Bouchakour R., Portal J.M., Gallière J.M., Azaïas F., Bertrand Y., Renovell M.- A compact DC model of gate oxide short defect.- Microelectronic Engineering, vol. 72, n° 1-4, p. 140-148, 2004

Bravaix A., Goguenheim D., Revil N., Vincent E.- Deep hole trapping effects in the degradation mechanisms of 6.5 to 2nm thick gate-oxide PMOSFETs.- Microelectronic Engineering, vol. 72, n° 1-4, p. 106-111, 2004

Bravaix A., Goguenheim D., Revil N., Vincent E.- Hole injection enhanced hot-carrier degradation in PMOSFETs used for system on chip applications with 6.5-2nm thick gate-oxide.- Microelectronic Reliability, vol. 44, n° 1, p. 65-77, 2004

Brequel H., Parmentier J., Walter S., Badheka R., Trimmel G., Masse S., Latournerie J., Dempsey P., Turquat C., Desmartin-Chomel A., Le Neindre-Prum L., Jayasooriya U. A., Hourlier D., Kleebe H.-J., Soraru G. D., Enzo S., Babonneau F.- Systematic structural characterization of the high-temperature behavior of nearly stoichiometric silicon oxycarbide glasses.- Chemistry of Materials, vol. 16, n° 13, p. 2585-2598, 2004

Castellani-Coulié K., Sagnes B., Saigné F., Palau J-M.,. Calvet M-C, Dodd P.E., Sexton F.W.- Study of a SOI SRAM sensitivity to SEU by 3-D device simulation.- IEEE Transactions on Nuclear Science, vol. 51, p. 2799-2804, 2004

Chamard V., Schülli T., Sztucki M., Metzger T.H., Sarrigiannidou E., Tolan M., Adelmann C., Daudin B.- Strain distribution in nitride quantum dot multilayers.- Phys. Rev. B 69, 125327 (2004)

Chaplygin I., Hayn R.- Sb2O2VO3 as a candidate for an ideal inorganic spin-Peierls compound.- Physical Review B, vol. 70, p. 064510, 2004

Décamps B., Priester L., Thibault J.- On the core localization of grain boundary extrinsic dislocations in Ni.- Adv. Engineer. Mater. 6, 814-818 (2004)

Deleruyelle D., Le Royer C., De Salvo B., Le Carval G., Gely M., Baron T., Autran J.L., Deleonibus S.- A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals.- Microelectronic Engineering, vol. 72, p. 399-404, 2004

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide.- IEEE Transactions on Device Materials Reliability, vol. 4, p. 715-722, 2004

D'Heurle F.M., Gas P., Lavoie C., Philibert J.- Diffusion in intermetallic compounds: the ordered Cu3Au rule, its history.- Z. Metallkunde, vol. 95, p. 852-859, 2004

Drouard E., Escoubas L., Flory F., Tisserand S., Roux L.- Ion implanted integrated optics (I3O®) technology for planar lightwave circuits fabrication.- Journal of Lightwave Technology, vol. 0733, p. 8724-, 2004

Duc F., Millet P., Chabre F., Ghorayeb A., Stepanov A.- On the low-temperature structure and magnetic behaviour of h-Na1.286V2O5.- Journal of Physics : Condensed Matter, vol. 16, n° 11, p. S629-, 2004

Duc F., Millet P., Ravy S., Thiollet A., Chabre F., Ghorayeb A., Stepanov A.- Low-temperature superstructure and charge-ordering effect in h-Na1.286V2O5.- Physical Review B, vol. 69, p. 094102-, 2004

Dumont-Nicolas M., Deschamps A.- Precipitate microstructures and resulting properties of Al-Zn-Mg metal inert gas-weld heat-affected zones.- Metall. and Mater. Trans . 35A, 1437-1448 (2004)

Dupuis V., L. Favre, S. Stanescu, J. Tuaillon, E. Bernstein, A. Perez.- Magnetic assembled nanostructures from pure and mixed Co-based clusters.- J. Phys. Cond. Matter, vol. 16, p. S2231 - S2240, 2004

Egels M., Gaubert. J., Pannier P., Bourdel S.- Design method for fully integrated CMOS RF LNA.- Electronics Letters, vol. 40, n° 24, p. 1513-1514,, 2004

Elalamy Z., Drouard E., Mcgovern T., Escoubas L., Simon J.J., Flory F.- Thermo-optical coefficients of sol-gel ZrO2 thin films.- Optics Communications, vol. 372, p. 365 – 372, 2004

Elgazzar S., Opahle I., Hayn R., Oppeneer P.M.- Calculated de Haas-van Alphen quantities of CeMin5 (M=Co, Rh, and Ir) compounds.- Physical Review B, vol. 69, p. 214510, 2004

Favre L., S. Stanescu, V. Dupuis, E. Bernstein, T. Epicier, P. Mélinon, A. Perez.- Nanostructured thin films from mixed magnetic Co-Ag clusters.- Appl. Surf. Sci., vol. 226, p. 265-270, 2004

Feklisova O. V. , Yakimov E. B., Yarykin N., Pichaud B.- Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon.- Journ. Phys.: Cond. Mat. 16, 201-5 (2004)

Flory F., Escoubas L.- Optical properties of nano - structured thin films.- Progress in Quantum Electronics, vol. 28, p. 89-, 2004

Gagou Y., Muller Ch., Frémy M.A., Mezzane D., Elkaïm E., Saint-Grégoire P.- Structural study of ferroelectric and paraelectric phases in PbK2LiNb5O15.- Physica Status Solidi, vol. 241, p. 2629-2638, 2004

Gas P., Bergman C., Labar J., Barna P., d’Heurle F.M.- Formation of embedded Co nanoparticles by reaction in Al/Co multilayers and impact on phase sequence.- Applied Physics Letters, vol. 84, p. 2421-2423, 2004

Gavillet J. , Thibault J., Stephan O., Amara H., Loiseau A., Bichara C., Gaspard J. P., Ducastelle F.- Nucleation and growth of single wall nanotubes : the role of metallic catalys.- Journal of Nanoscience and Nanotechnol., 4 , 346-359 (2004)

Gergaud P., Rivero C., Gailhanou M., Thomas O., Froment B. , Jaouen H.- Exploring Ni-Si thin-film reactions by means of simultaneous synchrotron .- X-ray diffraction and substrate curvature measurements.- Mat. Sci. and Engin. B 114-15, 67-71 (2004)

Gilibert F., Rideau D., Bernardini S., Scheer P., Minondo M., Roy D., Gouget G. and Juge A.- DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation.- Solid-State Electronics, vol. 48, n° 4, p. 597-608, 2004

Gillet M., Aguir K., Lemire C., Gillet E. and Schierbaum K.- The structure and electrical conductivity of vacuum-annealed WO3 thin films.- Thin Solid Films, vol. 467, p. 239-246, 2004

Gillet M., Masek K., Gillet E.- Structure of tungsten oxide nanoclusters.- Surface Science, vol. 566-568, p. 383-389, 2004

Gontier-Moya E.G., Beszeda I., Moya F.- Comparisons of parameters involved in mass transport and desorption at the surface of noble metals and sapphire.- Surface Science, vol. 566-568, p. 148-154, 2004

Gontier-Moya E.G., Moya F., Bernardini J.- A new diffusion mechanism for self-compensating impurities in alpha-alumina.- Z. Metallkd, vol. 95, p. 888-894, 2004

Guinneton F., Sauques L., Valmalette J.C., Cros F., Gavarri J.R.- Optimized infrared switching properties in thermochromic vanadium dioxide thin films: role of deposition process and microstructure.- Thin Solid Films, vol. 446, n° 2, p. 287-295, 2004

Harrison S., Coronel P., Wacquant F., Regnier C., Leverd F., Beverina A., Bustos J., Tavel B., Skotnicki T.- New concept of high-k integration in MOSFET’s by a deposition through contact holes.- MicroElectronic Engineering, vol. 72, p. 321-325, 2004

Hemamala U.L.C. , El-Ghussein F., Goedken A.M., Chen B., Leroux Ch. and Kruger M.B.- High-pressure X-ray diffraction and Raman spectroscopy of HfV2O7.- Physical Review B, vol. 70, p. 2141141-214114, 2004

Hidalgo P., Ottaviani L., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterisation of (11(2)0) 4H-SiC substrates by cathodoluminescence and X-ray topography.- Europ. Phys. Journ.:Appl. Phys. 27, 231-3 (2004)

Hidalgo P., Palais O., Martinuzzi S.- Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps.- Journ. Phys.: Cond. Mat. 16, 19-24 (2004)

Houssa M., Aoulaiche M., Autran J.L., Parthasarathy C., Revil N., Vincent E.- Modeling negative bias temperature instabilities in hole channel metal-oxide-semiconductor field effect transistors with ultrathin gate oxide layers.- Journal of Applied Physics, vol. 95, p. 2786-2791, 2004

Houssa M., De Gendt S., Autran J.L., Groeseneken G., Heyns M.M.- Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors.- Applied Physics Letters, vol. 85, p. 2101-2103, 2004

Houssa M., S. De Gendt, G. Groeseneken, M.M. Heyns, and Autran J.L.- Negative bias temperature instabilities in SiO2/HfO2 based hole channel field effect transistors.- Journal of the Electrochemical Society, vol. 151, p. F288-, 2004

Hubert C., Fiorini-Debuisschert C., Raymond P., M. Nunzi J., Simon J.J., Escoubas L.- Spontaneous photo-induced structuration of the surface of Azo-Benzene polymer films by the molecular migration effect.- Nonlinear Optics. Quantum Optics, vol. 31, p. -, 2004

Ionescu A. M., Munteanu D., Hefyene N., Anghel C.- Compact modeling of weak inversion generation transients in SOI MOSFETs.- Journal of the Electrochemical Society, vol. 151, p. G396-G401, 2004

Isa M., Valmalette J.C., Muller C., Lomello-Tafin M., Gas P., Elkaïm E.- Study of the nanostructuration of ZrAu alloy near the ambient temperature by synchrotron radiation and thermal analyses.- J. Alloys Compounds, vol. 373, 1-2, p. 96-103, 2004

Jamgotchian H., Nguyen Thi H., Bergeon N., Billia B.- Double-diffusive convective modes and induced microstructure localisation during solidification of binary alloys.- International Journal of Thermal Sciences, vol. 43, n° 8, p. 769-777, 2004

Kanoun M., M. Lemiti, G. Bremond, A. Souifi, F. Bassani, Berbezier I.- Electrical study of MOS structure with Ge embedded in SiO2 as floating gate for non-volatile memory.- Superlattices and Microstructures, vol. 36, n° 1-3, p. 143-148, 2004

Karmous A., A. Cuenat, A. Ronda, I. Berbezier , S. Atha, R. Hull.- Ge dot organization on Si substrates patterned by focused ion beam.- Applied Physics Letters, vol. 85, p. 6401-6403, 2004

Klimczak-Chmielowska M., Chmielowski R., Kopia A., Kusinski J., Villain S., Leroux C., Gavarri J.R.- Multiphase CuOz-CeO2-d thin films by pulsed laser deposition technique : experimental texture evolutions and kinetics modeling.- Thin Solid Films, vol. 458, p. 98-107, 2004

Kyung B., Hankevych V., Dare A.M., Tremblay A.M.S.- Pseudogap and spin fluctuations in the normal state of the electron-doped cuprates.- Physical Review Letters, vol. 93, n° 14, p. 147004-, 2004

Labat S., Bocquet F. , Gilles B., Thomas O.- Stresses and interfacial structure in Au-Ni and Ag-Cu metallic multilayers.- Scripta-Materialia 50 , 717-21 (2004)

Lacaze E., Michel J.P., Goldmann M., Gailhanou M., de-Boissieu M., Alba M.- Bistable nematic and smectic anchoring in the liquid crystal octylcyanobiphenyl (8CB) adsorbed on a MoS2 single crystal.- Phys. Rev. E., 69, 41705-8 (2004)

Lauque P., M. Bendahan, JL. Seguin, K A. Ngo, P. Knauth.- Highly sensitive and selective room temperature NH3 gas microsensor using an ionic conductor (CuBr) film.- Analytica Chimica Acta, vol. 515, n° 2, p. 279-284, 2004

Leoni E. , Binetti S., Pichaud B., Pizzini S.- Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration.- Europ. Phys. Journ.: Appl. Phys. 27, 123-7 (2004)

Leoni E., El Bouayadi R, Martinelli L., Regula G., Ntsoenzok E., Pichaud B., Pizzini S.- Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix.- Europ. Phys. Journ.: Appl. Phys. 27, 89-92 (2004)

Liu Q.S., Zhou B.H., Nguyen Thi H., Hu W.R.- Instability of two layer Rayleigh-Benard convection with interfacial thermocapillary effect.- China Physics Letters, vol. 21, p. 686-, 2004

Loiseau A., Gavillet J., Ducastelle F., Thibault J., Stéphan O., Bernier P., Thair S.- Nucleation and growth of SWNT: TEM studies of the role of the catalyst.- C. R Physique 4, 975-991 (2004)

Lopez L., Masson P., Née D., Bouchakour R.- Temperature and drain voltage dependence of gate-induced drain leakage.- Microelectronic Engineering, vol. 72, n° 1-4, p. 101-105, 2004

Mangelinck D., Lee P.S., Osipowitcz T., Pey K.L.- Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry.- Nuclear Instruments and Methods in Physics Research B, vol. 215, n° 3-4, p. 495-500, 2004

Marine W., Bulgakova N.M., Patrone L., Ozerov I.- Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: experiment and modeling.- Applied Physics A : Materials Science & Processing, vol. 79, p. 771-774, 2004

Menou N., Castagnos A-M., Muller Ch., Johnson J., Wouters D.J., Baturin I., Shur V. Ya.- Failure analysis of FeCAPs. Electrical behavior under synchrotron X-ray irradiation.- Integrated Ferroelectrics, vol. 61, p. 89-95, 2004

Michel J. P., Lacaze E., Alba M., de-Boissieu M. , Gailhanou M., Goldmann M.- Optical gratings formed in thin smectic films frustrated on a single crystalline substrate.- Phys. Rev. E., 70, 11709-12 (2004)

Moreau J.M., Isa, Chaou A.A., Lomello-Tafin M., Galez P., Jourdan J., Valmalette J.C., Soubeyroux J.L.- Neutron powder diffraction study of the crystal structures of ZrAu.- J. Alloys Compounds, vol. 373, 1-2, p. 16-27, 2004

Morris S.J., Fougeres P., Bozzo-Escoubas S., Bodnar S., Gaillard S.- Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique.- Mat. Science in Semiconductor Processing Vol. 7, 383-388 (2004)

Nony L., Bennewitz R., Pfeiffer O., Gnecco E., Meyer E., Eguchi T., Gourdon A., Joachim C.- Cu-TBPP and PTCDA molecules on insulating surfaces investigated by UHV non-contact AFM.- Nanotechnology, vol. 15, p. S91-S96, 2004

Nony L., Gnecco E., Bennewitz R., Baratoff A., Alkauskas A., Pfeiffer O., Maier S., Wetzel A., Meyer E. and Gerber C.- Ordered molecular assemblies confined in nanostructures on an insulator.- Nanoletters, vol. 4, p. 2185-2189, 2004

Nony L., Gnecco E., Bennewitz R., Baratoff A., Alkauskas A., Pfeiffer O., Maier S., Wetzel A., Meyer E.and Gerber C.- Ordered molecular assemblies confined in nanostructures on an insulator.- Nanoletters, vol. 4, 2185-2189, 2004

Oison V., Rabiller P., Katan C.- Theoretical investigation of the ground-state properties of DMTTF-CA : a step toward the understanding of charge transfer complexes undergoing the neutral-to-ionic phase transition.- Journal of Physical Chemistry A, vol. 108, p. 11049-11055, 2004

Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B.- Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography.- Journ. Phys.: Cond. Mat. 16, 107-14 (2004)

Palais O., Hidalgo P.- Investigation and identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques .- Defects and Diffusion Forum 230, 125-133 (2004)

Palais O., Hidalgo P., Martinuzzi S.- FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps.- Europ. Phys. Journ.: Appl. Phys. 27, 483-5 (2004)

Palais O., Lamzatouar A., Hardouin-Duparc O. B. M., Thibault J., Charaï A.- Correlation between electrical activity and various structures of Ge grain boundaries.- Journ. of Phys. : Cond. Mat. 16, 8207-8210 (2004)

Papageorgiou N., Angot T., Salomon E., Giovanelli L., Layet J. M., Le Lay G.- Physics of ultra-thin phtalocyanine films on semiconductors.- Progress in Surface Science, vol. 77, p. 139-, 2004

Patrone L., Palacin S., Bourgoin J.-P., Werts M.H.V.- Versatility of aqueous micellar solutions for self-assembled monolayers engineering.- Langmuir, vol. 20, n° 26, p. 11577-11582, 2004

Payet F., Cavassilas N., Autran J.L.- Theoretical investigation of hole phonon-velocity in strained Si/SiGe MOSFET’s.- Journal of Applied Physics, vol. 95, p. 713-717, 2004

Pechou R., Ajustron F., Seine G., Coratger R., Maurel C., Beauvillain J.- A hybrid instrument combining electronic and photonic tunnelling for surface analysis.- Applied Surface Science, vol. 225, 2004

Pey K.L., Lee P.S. and Mangelinck D.- Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines.- Thin Solid Films, vol. 462-463, p. 137-145, 2004

Pfeiffer O., Nony L., Bennewitz R., Baratoff A., Meyer E.- Distance dependence of force and dissipation in nc-AFM on Cu(100) and Al(111).- Nanotechnology, vol. 15, p. S101-S107, 2004

Pizzini S., Leoni E., Binetti S., Acciari M., Le Donne A., Pichaud B.- Luminescence of dislocations and oxide precipitates in Si.- Solid State Phenom. 95-96, 273-82 (2004)

Portavoce A., Berbezier I., Gas P., Ronda A.- Sb-surface segregation during epitaxial growth of SiGe heterostructures : the effects of Ge composition and biaxial stress.- Physical Review B, vol. 69, n° 15, p. 155414, 2004

Portavoce A., Berbezier I., Ronda A.- Sb-surfactant-mediated growth of Si and Ge nanostructures.- Physical Review B, vol. 69, p. 155416, 2004

Portavoce A., Gas P., Berbezier I., Ronda A, Christensen J.S., Yu. Kuznztsov A., Svensson B.G.- Sb lattice diffusion in Si l-xGex /Si(100) heterostructures : chemical and stress effects.- Physical Review B, vol. 69, p. 155415, 2004

Portavoce A., Gas P., Berbezier I., Ronda A., Christensen J.S., Svensson B.- Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : Effect of Ge concentration and biaxial stress.- Journal of Applied Physics, vol. 96, n°6, p. 3158-3163, 2004

Portavoce A., M. Kammler, R. Hull, M. C. Reuter, M. Copel, Ross F. M.- Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001).- Physical Review B, vol. 70, p. 195306, 2004

Porte L.- Stress and surface energies versus surface nanostructuring : the InGaAs/InP(001) epitaxial system.- Journal of Crystal Growth, vol. 273, p. 136-148, 2004

Quintana C., Golmayo D., Dotor M., Lancin M.- Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy.- Europ. Phys. Journ.: Appl. Phys. 25, 159-68 (2004)

Rivero C., Gergaud P., Thomas O., Froment B., Jaouen H.- In situ study of stress evolution during the reaction of a nickel film with a silicon substrate .- Microelectronic Engineer. 76, 318−323 (2004)

Rolland A., Bernardini J., Moya G. et Girardeaux C.- Kinetics of tin segregation on crystalline semi-conductor surfaces: effect of the defects induced by ion bombardment.- Surface Science, vol. 566-568, p. 1163-1168, 2004

Rollet A.L., Bessada C., Auger Y., Melin P. , Gailhanou M., Thiaudiere D.- A new cell for high temperature EXAFS measurements in molten rare earth fluorides .- Nucl. Instr. And Meth. B 226, 447-452 (2004)

Rollet A.L., Bessada C., Rakhmatoulline A., Auger Y., Melin P., Gailhanou M., Thiaudiere D.- In situ high temperature NMR and EXAFS experiments in rare-earth fluoride molten salts.- Comptes Rendus de Chimie. 7 (12) 1135-1140 (2004)

Ronda A., Berbezier I.- Self-patterned Si surfaces as templates for Ge islands ordering.- Physica E : Low-dimensional Systems and Nanostructures, vol. 23, n° 3-4, p. 370-376, 2004

Roussel J..M., Saul A., Tréglia G., Legrand B.- Linear time dependence of the surfactant effect: a local equilibrium under flux.- Phys. Rev. B, 69 115406 (2004)

Rowell N.L, D.C. Houghton, I. Berbezier, A. Ronda, D. Webb, Ward M.- Dopant layer abruptness in strained Si1-xGex heterostructures.- Journal of Vacuum Science and Technology A, vol. 22, n° 3, p. 939-942, 2004

Saitzek S., Guirleo G., Guinneton F., Sauques L., Villain S., Aguir K., Leroux C., Gavarri J.R.- New thermochromic CeO2-VO2 bilayers for optical or electronic switching systems.- Thin Solid Films, vol. 449, n° 1-2, p. 166-172, 2004

Salhi F., Berrada A., Aride J., Bernardini J., Moya G.- Dependance of the rolling degree characterized by microhardness on the anisothermal recristallization in straight rolled silver.- Physical & Chemical News, vol. 19, p.1-7, 2004

Si Ahmed A., Kansy J., Zarbout K., Moya G., Goeuriot D.- Positron trapping within the grain and at grain boudaries in sintered alumina of high impurity content.- Materials Science Forum, vol.445-446, p.177-180, 2004

Suchodolskis A., Assmus W., Giovanelli L., Karlsson U. O., Karpus V., Le Lay G., and Uhrig E.- Valence band structure of i-ZnMgEr quasicrystal: photoemission study.- Journal of Physics : Condensed Matter, vol. 16, p. 1-, 2004

Sztucki M., Schülli T., Metzger T.H., Beham E., Schuh D., Chamard V.- Direct determination of strain and composition inInGaAs nano-island using anomalous grazing incidence diffraction.- Superlatices and microstructures 36, 11 (2004)

Texier M., Proult A., Bonneville J., Rabier J.- Microstructures of i-AlPdMn deformed at low and intermediate temperatures.- Mat. Sc. & Engin. A, 387-389, 1023 (2004)

Thibault J., Bayle-Guillemaud P., Dressler C.- Au/Ni multilayer transformation with temperature: a quantitative HREM study.- Interface Science 2, 235-247 (2004)

Torregrosa F., C.Laviron, H. Faik, D. Barakel, F. Milesi and S. Beccaccia.- Realization of ultra shallow junctions by PIII: application to solar cells.- Surface and Coatings Technology, vol. 186, n° 1-2, p. 93-98, 2004

Varlet H., Curtil C., Alfonso C., Burle N., Arnoult A., Fontaine C., Laügt M.- Characterization by X-ray diffraction and Electron Microscopy of GaInAs & GaAsN single layers and quantum wells grown on GaAs.- Physica E, 23, 362 (2004)

Vervisch W., Ventura L., Pichaud B., Ducreux G., Lanois F., Lhorte A.- Kinetic reaction of the formation of the platinum related complex at the origin of the p-type doping effect in silicon.- Solid State Phenom. 95-96, 361-6 (2004)

Villaret A., Ranica R., Masson P., Malinge P., Mazoyer P., Candelier P., Jacquet F., Cristoloveanu S., Skotnicki T.- Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs.- Microelectronic Engineering, vol. 72, n° 1-4, p. 434-439, 2004

Volpi F., A R Peaker, I Berbezier and Ronda A.- Electrically active defects induced by sputtering deposition on silicon : the role of hydrogen.- Journal of Applied Physics, vol. 95, p. 4752-, 2004

Xerri B., Borloz B.- An iterative method using conditional second order statistics applied to the blind source separation problem.- IEEE Transactions on Signal Processing,  vol 52, n° 2, p. 313-328, 2004

Zahra A.M., Zahra C.Y., Raviprasad K., Polmear I.J.- Effects of minor additions of Mg and Ag on precipitation phenomena in Al-4 mass%C.- Phil. Mag. A, 84, 2521-41 (2004)


2005

Ananou B., Baronnet A ., Ksari Y., Marfaing J., Regnier S., Rochette P., Sulpice A., Stepanov A.- Magnetic properties of marine tertiary tephra investigated over a wide temperature range.- Journal of Magnetism and Magnetic Materials, vol. 293, n° 2, p. 816-825, 2005

Aneflous L., Villain S., Gavarri J-R., Musso J.A., Benyaich H., Benlhachemi A., Marrouche A.- Elaborations and characterization of europium doped ceria solid solutions.- Journal de Physique IV France, vol. 123, p. 35-39, 2005

Autran J.L., Decarre E., Munteanu D., Bescond M., Houssa M.- A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics.- Journal of Non-Crystalline Solids, vol. 351, p. 1897-1901, 2005

Autran J.L., Munteanu D., Houssa M., Castellani-Coulié K., Said A.- Performance degradation induced by fringing field-induced barrier lowering and parasitic charge in double-gate metal-oxide-semiconductor field-effect transistors with high-k dielectrics.- Japanese Journal of Applied Physics, p. 8362-8366, 2005

Autran J.L., Munteanu D., Tintori O., Aubert M., Decarre E.- An analytical subthreshold current model for ballistic quantum-wire MOS transistors.- Molecular Simulation, vol. 31, n° 2-3, p. 179-183, 2005

Autran J.L., Nehari K., Munteanu D.- Compact modeling of the threshold voltage in silicon nanowire MOSFET including 2D-quantum confinement effects.- Molecular Simulation, vol. 31, p. 839-843, 2005

Avoinne C., Rashid T., Chowdhury V., Rahajandraibe W., Dufaza C.- Second-order compensated bandgap reference with convex correction.- Electronics Letters, vol. 41, n° 7, p. 276-277, 2005

Bansmann J., S.H. Baker, C. Binns, J.A. Blackman, J.-P.Bucher, J. Dorantes-Dávila, V. Dupuis, L. Favre, D. Kechrakos, A.Kleibert, K.-H. Meiwes-Broer, G.M. Pastor, A. Perez, O.Toulemonde, K.N. Trohidou, J. Tuaillon et Y. Xie.- Magnetic and structural properties of isolated and assembled clusters.- Surface Science Reports, à paraître, 2005

Barrett N., Krasovskii E.E., Themlin J.-M., Strocov V.N.- Elastic scattering effects in the electron mean free path in a graphite overlayer studied by photoelectron spectroscopy and LEED.- Physical Review B, vol. 71, p. 035427, 2005

Baturin I., Menou N., Shur V. Ya., Muller Ch., Kuznetsov D., Hodeau J-L., Sternberg A.- Influence of irradiation on the switching behavior in PZT thin films.- Materials Science and Engineering B, vol. 120, p. 141-145, 2005

Bellini, B., Ackermann, J., Klein, H., Dumas, Ph., Safarov, V.- Light-induced random-walk motion in azo-polymers.- Materials Science and Engineering C, vol. 25, 675-678, 2005

Benarchid Y., Rogez J.- The effect of Cr2O3 and P2O5 additions on the phase transformations during the formation of calcium sulfoaluminate C4A3S.- Cement and Concrete Research 35, 2074-2080, (2005)

Benarchid Y., Rogez J., Diouri A., Boukhari A., Aride J.- Formation and hydraulic behaveior of chromium-phosphorus doped calcium sulfoaluminate cement.- Thermochimica Acta 433, 183-186 (2005)

Berbezier I., Descoins M., Ismail B., Maaref H., Ronda A.- Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots.- Journal of Applied Physics, vol. 98, n° 6, p. 063517, 2005

Bergeon N., Trivedi R., Billia B., Echebarria B., Karma A., Liu S., Weiss C., Mangelinck-Noël N.- Real-time in situ characterization of interface- dynamics in microstructure formation during 3D-directional solidification of transparent alloys.- Advances in Space Research, vol. 36, p. 80-, 2005

Bescond M., Autran J.L., Cavassilas N., Munteanu D., Lannoo M.- Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green’s function formalism.- Journal of Computational Electronics, vol. 3, p. 393-396, 2005

Beszeda I., Beke D.L., Gontier-Moya E.G., Kaganovskii Yu.S., Ianetz D.- Calculations of surface diffusion self-diffusion coefficients from AES data on decay of thin metal films.- Defect and Diffusion Forum, vol. 237-240, p. 727-732, 2005

Beszeda I., Gontier-Moya E.G., Imre A.W.- Surface Ostwald ripening and evaporation of gold beaded films on sapphire.- Applied Physics A, vol. 81, n° 4, p. 673-676, 2005

Billia B., Gandin Ch-A., Zimmermann G., Browne D., Dupouy M-D.- Columnar-equiaxed transition in solidification processing : the ESA-MAP CETSOL project.- Microgravity Science Technology, vol. 16, p. 20-, 2005

Billia B., Nguyen Thi H., Reinhart G., Dabo Y., Zhou B.H., Liu Q.S., Lyubimova T.P., Roux B., Lan C.W.- Tailoring of dendritic microstructure in solidification processing by crucible vibration / rotation.- Microgravity Science Technology, vol. 16, p. 15-, 2005

Bocquet F., Maurel C., Roussel J.M., Abel M., Koudia M., Porte L.- Segregation-mediated capping of Volmer-Weber Cu islands grown onto Ag(111).- Physical Review B, vol. 71, p. 075405-, 2005

Bouquet V., Canet P., Lalande F., Bouchakour R., Mirabel J.M.- Non volatile memory cell design : coupling ratio impact on tunnel oxide reliability.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1873-1877, 2005

Branbilla A., Giovanelli L., Vilmercati P., Cattoni A., Biagioni P., Goldoni A., Finazzi M., Duò L..- Rb-intercalated C60 compounds studies by photoemission and inverse photoemission spectroscopy.- Journal of Electron Spectroscopy and Related Phenomena, vol. 144-147C, p. 803-, 2005

Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.- Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.- Microelectronics Reliability, vol. 4, n° 9-11, p. 1370-1375, 2005

Brutin D., Tadrist L.- Comment to "A study of laminar flow of polar liquids through circular microtubes" [Phys.Fluids [16], 1267 (2004)].- Physics of Fluids, vol. 17, p. 019101, 2005

Brutin D., Tadrist L.- Destabilization mechanisms and scaling laws of convective boiling in a minichannel.- Journal of Thermophysics and Heat Transfer, sous-presse, 2005

Brutin D., Tadrist L.- Modeling of surface-fluid electrokinetic coupling on the laminar flow friction factor in microtubes.- Microscale Thermophysical Engineering, vol. 9, p. 1, 2005

Buckley J., De Salvo B., Deleruyelle D., Gely M., Nicotra G., Lombardo S., Damlencourt J.F., Hollinger Ph., Martin F., Deleonibus S.- Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics.- Microelectronic Engineering, vol. 80, p. 210-213, 2005

Casadei B., Dufaza C., Martin L.- Photogate simulation model for CMOS imagers design.- WSEAS Transactions on Circuits and Systems, Issue 5, vol. 4, p. 453-461, ISBN 1109-2734, May 2005

Castellani-Coulié K., Munteanu D., Autran J.L., Ferlet-Cavrois V., Paillet P., Baggio J.- Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs.- IEEE Transactions on Nuclear Science, vol. NS-52, p. 2137- 2143, 2005

Castellani-Coulié K., Munteanu D., Ferlet-Cavrois V., Autran J.L.- Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations.- IEEE Transactions on Nuclear Science, vol. NS-52, p. 1474-1479, 2005

Cavassilas N., Bescond M., Autran J.L.- Improvement of current-control induced by oxide notch in very short field-effect transistor.- Applied Physics Letters, vol. 87, p. 73509-73512, 2005

Chabre F., Ghorayeb A. M., Millet P., Pashchenko V. A. and Stepanov A.- Low-temperature behavior of the ESR linewidth in a system with a spin gap : eta-Na1.286V2O5.- Physical Review B, vol. 72, p. 012415 (1 à 4), 2005

Chaillan F., Courmontagne P.- Amélioration par utilisation du filtrage adapté stochastique de la détection de sillages sur des images SAR.- Traitement du Signal, acceptée, 2005

Charvet S., Le Bourhis E., Faurie D., Goudeau P., Lejeune M., Gergaud P.- Evolution under annealing and nitrogen implantation of the mechanical properties of amorphous carbon films.- Thin solid Films 482, 318- 323 (2005)

Chérault N., Carlotti G., Casanova N., Gergaud P., Goldberg C., Thomas O., Verdier M.- Mechanical characterization of low−k and barrier dielectric thin films.- Microelectronic Engineering, 82, 368 (2005)

Chung J.-H., Proffen Th., Shamoto S., Ghorayeb A.M., Croguennec L., Tian W., Sales B.C., Jin R., Mandrus D. and Egami T.- Local structure of LiNiO2 studied by neutron diffraction.- Physical Review B, vol. 71, p. 064410 (1 à 11), 2005

Coulet M-V., Testemale D, Hazemann . J-L., Gaspard J-P. , Bichara C.- Reverse Monte Carlo analysis of the local order in liquid Ge0.15Te0.85 alloys combining neutron scattering and x-ray absorption spectroscopy.- Phys. Rev. B. 72(17) 366- 371 (2005)

Courmontagne P.- An improvement of ship wake detection based on the radon transform.- Signal Processing, vol. 85, n° 8, p. 1634-1654, 2005

De Luigi, C. et Jauffret C.- Estimation and classification of FM signals using time frequency transforms.- IEEE Transactions on Aerospace and Electronic Systems, vol 41, n° 2, p. 421-437, 2005

Deleruyelle D., Molas G., DeSalvo B., Gely M., Lafond D.- Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics.- Solid-State Electronics, vol. 49, p.1728-1733, 2005

Deschamps A., Genevois C., Dumont-Nicolas M., Perrard F., Bley F.- Study of precipitation kinetics: towards non-isothermal and coupled phenomena.- Phil. Mag. A 85, 3091-3112 (2005)

Dolino G., Bastie P., Capelle B., Chamard V., Härtwig J. , Guzzo P.L.- Origin of the opalescence at the a-b transition of quartz: role of the incommensurate phase studied by synchrotron radiation.- Phys. Rev. Lett. 94, 465 (2005)

Drillet P, Dulcy C, Pazsko F, Mangelinck D., Gas P., Clugnet G., Bergman C., Vaughan G.- Real time synchrotron analysis of the initial stages of the galvanization process in Al containing Zn baths.- Revue de Métallurgie,Cahiers d’Informations Techniques, vol. 102, n° 1, p. 75-78, 2005

Dumont M., Lefebvre W., Doisneau-Cottignies B., Deschamps A.- Characterisation of the composition and volume fraction of eta ' and eta precipitates in an Al-Zn-Mg alloy by a combination of atom probe, small-angle X-ray scattering and transmission electron microscopy.- Acta Mater. 53, 2881-2892 (2005)

El Hadadi B., Carchano H., Seguin J.L., Tijani H.- Structural and electrical properties of amorphous GaAs sputtered at high substrate temperature (220 and 400°C).- Vacuum, vol. 80, p. 272-283, 2005

Elkhadiri I., Diuori A., Boukhari A., Rogez J.- Thermodynamic variations in the decarbonation of low calcium fly ash-cement raw mix.- Materiales de Construccion 55 41-49 (2005)

Enoch S., Simon J.-J., Escoubas L., Elalamy Z., Lemarquis F., Torchio P., Albrand G.- Simple layer-by-layer photonic crystal for the control of thermal emission.- Applied Physics Letters, vol. 86, p. 261101-, 2005

Ernst R., Mangelinck-Noël N., Hamburger J., Garnier C., Ramoni P.- Grain size reduction by electromagnetic stirring inside gold alloys.- European Physical Journal - Applied Physics, vol. 30, p. 215-222, 2005

Feklisova O. V., Pichaud B., Yakimov E.B.- Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density.- Phys. Stat. Sol. A 202, 896-900 (2005)

Feltrin A., Michelini F., Staehli JL. et al.- Localization-dependent photoluminescence spectrum of biexcitons in semiconductor quantum wires.- Physical Review Letters, vol. 95, n° 17, p. 177404, 2005

Garandet J.P., Boutet G., Lehmann P., Drevet B., Camel D., Rouzaud A., Favier J.J., Faivre G., Coriell S., Alexander J.I.D., Billia B.- Morphological stability of a solid – liquid interface and cellular growth : Insights from thermoelectric measurements in microgravity experiments.- Journal of Crystal Growth, vol. 279, p. 195-205, 2005

Gaubert J., Egels M., Pannier P., Bourdel S.- Design method for broadband CMOS RF LNA.- Electronics Letters, vol. 41, n° 7, p. 382-384, 2005

Gilibert F., Rideau D., Dray A., Agut F., Minondo M., Juge A., Masson P., Bouchakour R.- Characterization and modeling of gate-induced-drain-leakage.- IEICE Transactions on Electronics, vol. E88-C, n° 5, p. 829-837, 2005

Gillet M., Delamare R., and Gillet E.- Growth, structure and electrical properties of tungsten oxide nanorods.- European Physical Journal D, vol. 34, p. 291-294, 2005

Gillet M., K. Aguir, M. Bendahan, P. Mennini.- Grain size effect in sputtered trioxide thin films on the sensitivity to ozone.- Thin Solid Films, vol. 484, n° 1-2, p. 358-363, 2005

Gillet M., Mikaelian G., Assaban A., Gillet E.- Stresses and adhesion of thin metallic coatings on oxide substrates.- Journal of Adhesion Science and Technology, vol. 19, n° 9, p. 753-763, 2005

Gillet M., R. Delamare, E. Gillet.- Growth of epitaxial tungsten oxide nanorods.- Journal of Crystal Growth, vol. 279, p. 93-99, 2005

Giovanelli L., De Santis M., Panaccione G., Sirotti F., Vobornik I., Larciprete R., Egger S. and Rossi G.- Magnetic and electronic properties of a Pt-Co bilayer on Pt(111).- Journal of Magnetism and Magnetic Materials, vol. 288, p. 236-, 2005

Giovanelli L., Panaccione G., Rossi G., Fabrizioli M., Tian C.-S., Gastelois P. L., Fujii J., and Back C. H.- Interface magnetization profiling by X-ray magnetometry of marker impurities on Fe/GaAs(001)-(4x6).- Applied Physics Letters, vol. 87, p. 1-, 2005

Giovanelli L., Panaccione G., Rossi G., Fabrizioli M., Tian C.-S., Gastelois P. L., Fujii J., and Back C. H.- Layer selective spectroscopy on Fe/GaAs(001) : influence of the interface on the magnetic properties.- Physical Review B, vol. 72, p. 45221, 2005

Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.- Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.- Microelectronics Reliability, vol. 45, p. 487-492, 2005

Gomri S., Seguin J.L., Aguir K.- Modeling on oxygen chemisorption-induced noise in metallic oxide gas sensors.- Sensors and Actuators B : Chemical, vol. 107, n° 2, p. 722-729, 2005

Goudeau P., Mendibide C., Steyer P., Esnouf C., Thiaudiere D., Gailhanou M., Fontaine J.- X-ray diffraction analysis of the residual stress state in PVD TiN/CrN multilayer coatings deposited on tool steel.- Surface & Coatings Technology, vol.200, no.1-4, 165-9. (2005)

Goudeau P., Vandenbulcke L., Met C., De Barros M.I., AndreAzza P., Thiaudiere D., Gailhanou M.- X-ray diffraction analysis of residual stresses in smooth fined-grain diamond coatings deposited on TA6V alloys.- Surface & Coatings Technology, vol.200, no.1-4,. 170-3. (2005)

Goux L., Lisoni J.G., Schwitters M., Paraschiv V., Maes D., Haspeslagh L., Wouters D.J., Menou N., Turquat Ch., Madigou V., Muller Ch., Zambrano R.- Composition control and ferroelectric properties of sidewalls in integrated 3-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors.- Journal of Applied Physics, vol. 98, n° 5, p. 054507 (1-7), 2005

Goux L., Russo G., Menou N., Lisoni J.G., Schwitters M., Paraschiv V., Maes D., Artoni C., Corallo G., Haspeslagh L., Wouters D.J., Zambrano R., Muller Ch.- A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling.- IEEE Transactions on Electron Devices, vol. 52, n° 4, p. 447-453, 2005

Guérin J., K. Aguir, M. Bendahan and C. Lambert-Mauriat.- Thermal modelling of a WO3 ozone sensor response.- Sensors and Actuators B : Chemical, vol. 104, n° 2, p. 289-293, 2005

Guérin R., Debierre J.M., Kassner K.- Growth patterns in a channel for singular surface energy : phase-field model.- Physical Review E, vol. 71, p. 011603, 2005

Guinneton F., Monnereau O., Argeme L., Stanoi D., Socol G., Mihailescu I.N., Zhang T., Grigorescu C., Trodahl H.J., Tortet L., PLD thin films obtained from CrO3 and Cr8O21 targets.- Applied Surface Science, vol. 247, n° 1-4, p. 139-144, 2005

Guinneton F., Sauques L, Valmalette J.C., Cros F., Gavarri J.R.- Role of surface defects and microstructure in infrared optical properties of thermochromic Vo2 materials.- Journal of Physics and Chemistry of Solids, vol. 66, n° 1, p. 63-73, 2005

Hassam S., Bahari Z.- Equilibrium phase diagram of the Ag-Au-Pb ternary system.- Journal of Alloys and Compounds 392,120-126 (2005)

Houssa M.- Modelling negative bias temperature instabilities in advanced p-MOSFETs.- Microelectronics Reliability, vol. 45, p. 3-12, 2005

Houssa M., De Jaeger B., Delabie A., Van Elshocht S., Afanas’ev V.V., Autran J.L., Stesmans A., Meuris M., Heyns M.M.- Electrical characteristics of Ge/GeOx/HfO2/TaN structures.- Journal of Non-Crystalline Solids, vol. 351, p. 1902-1905, 2005

Huard V., Denais M., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- Review on NBTI and PBTI degradation in deep submicrometer CMOS technologies.- Microelectronics Reliability, acceptée, 2005

Huard V., Denais M., Perrier F., Revil N., Parthasarathy C., Bravaix A., Vincent E.- A thorough investigation of MOSFETs NBTI degradation.- Microelectronics Reliability, special issue, vol. 45, n° 1, p. 83-98, 2005

Idrissi H., Lancin M., Douin J., Regula G., Pichaud B.- Dynamical study of dislocations and 4H to 3C transformation induced by stress in (11-20) 4H-SiC.- Mat. Sci. Forum 483-485, 299-302 (2005)

Idrissi H., Regula G., Lancin M., Douin J., Pichaud B.- Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending.- Phys. Stat Sol C 6, 1998-2003 (2005)

Isa M., Valmalette J.C., Muller C., Leroux C.- Evolution in time of a gold-zirconia nanopowder at room temperature : nucleation-growth of gold nanoparticles.- Chemistry of Materials, vol. 17, n° 24, p. 5920-5927, 2005

Ismail B., M. Descoins, A. Ronda, F. Bassani, G. Bremond, H. Maaref, Berbezier I.- Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dots.- Journal of Vacuum Science and Technology B, vol. 23, n° 1, p. 242-246, 2005

Jennane A., Bernardini J., Moya G.- Defect recovery studied by positron lifetime measurements in quenched and electron irradiated dinickel silicide.- Physical and Chemical News, vol. 24, p. 76-79, 2005

Kassner K., C. Misbah, J-M. Debierre.- Nonlocal interface equations in crystal growth.- Journal of Crystal Growth (Proceedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy), vol. 275, n° 1-2, e183, 2005

Labidi A., C. Jacolin, M. Bendahan, A. Abdelghani, J. Guérin, K. Aguir and M. Maaref.- Impedance spectroscopy on WO3 gas sensor.- Sensors and Actuators B : Chemical, vol. 106, n° 2, p. 713-718, 2005

Lamzatouar A., Palais O., Hardouin-Duparc O.B.M., Thibault J., Charai A.- Relationship between structure, segregation and electrical activity in grain boundaries.- Journ. Mat. Sci. 40, 3163-7 (2005)

Lannoo M.- Atomistic nanodevice simulation.- Solid State Phenomena, vol. 108-109, p. 787-, 2005

Lauque P., Bendahan M., Seguin J.L., Knauth P.- Application of CuBr ion conductor thin films for ammonia detection.- Materials Research Society Symposium, vol. 835, p. -, 2005

Leandri C., Le Lay G., Aufray B., Girardeaux C., Avila J., Dávila M.E., Asensio M.C., Ottaviani .-C., Cricenti A.- Self-aligned silicon quantum wires on Ag (110).- Surface Science, vol. 574, n° 1, p. L9-L15, 2005

Lee P.S., Pey K.L., Mangelinck D., Chi D.Z., Osipowicz T.- On the morphological changes of Ni- and Ni(Pt)-silicides.- Journal of the Electrochemical Society, vol. 152, n° 4, p. G305-G308, 2005

Legros M., Kaouache B., Gergaud P., Thomas O., Dehm G., Balk T. J., Arzt E.- Pipe-Diffusion ripening of Si precipitates in Al-0.5% Cu-1%Si thin films.- Phil. Mag. A 85, 3541-3552 (2005)

Lombardo P., Daré A.M., Hayn R.- Effect of Hund's exchange on the spectral function of a triply orbital degenerate correlated metal.- Physical Review B, vol. 72, p. 245115, 2005

Lyubimov D.V., Lyubimova T.P., Tcherepanov A.A., Roux B., Billia B., Nguyen Thi H.- Vibration influence on morphological instability of a solidification front.- Microgravity Science Technology, vol. 16, p. 290-, 2005

Malko A., Baier M.H., Pelucchi E., Michelini F., Karlsson K.F., Dupertuis M.A., Kapon E.- Single-photon emission from pyramidal quantum dots: The impact of hole thermalization on photon emission statistics.- Physical Review B, vol. 72, n° 19, p. 195332, 2005

Manea A.S., Monnereau O., Notonier R., Guinneton F., Logofatu C., Tortet L., Garnier A., Mitrea M., Negrila C., Branford W., Grigorescu C.E.A.- Heusler bulk materials as targets for pulsed laser deposition: growth and characterization.- Journal of Crystal Growth, vol. 275, n° 1-2, p. 1787-1792, 2005

Mangelinck-Noel N., Nguyen Thi H., Reinhart G., Schenk T., Cristiglio V., Dupouy M.D., Gastaldi J., Billia B., Härtwig J., Baruchel J.- In situ analysis of equiaxed growth of aluminium - nickel alloys by x-ray radiography at ESRF.- Journal of Physics D - Applied Physics, vol. 38, p. A28-A32, 2005

Martinuzzi S., Ferrazza F., Périchaud I.- Improved p type or raw n type multicrystalline silicon wafers for solar cells.- Solid State Phenom. 108-109, 525 (2005)

Martinuzzi S., Palais O., Pasquinelli M., Ferrazza F.- N-type multicrystalline silicon and rear junction solar cells.- Europhys. Journ.: Appl. Phys. 32, 187 (2005)

Maurel C., Abel M., Koudia M., Bocquet F., Porte L.- Pit formation and segregation effect during Cu thin film growth on Ag(111).- Surf. Science 596, 45-52 (2005)

Maurel C., Abel M., Koudia M., Bocquet F., Porte L.- Pit formation and segregation effects during Cu thin film growth on Ag(111).- Surface Science, vol. 596, p. 45–52, 2005

Mazingue T., Escoubas L., Spalluto L., Flory F., Socol G., Ristoscu C., Axente E., Grigorescu S., Mihailescu I.N., Vainos N.- Nanostructured ZnO coatings grown by pulsed laser deposition for optical gas sensing of butane.- Journal of Applied Physics, vol. 98, p. 074312-, 2005

Mendibide C., Steyer P., Esnouf C., Goudeau P., Thiaudiere D., Gailhanou M.- Fontaine J.- X-ray diffraction analysis of the residual stress state in PVD TiN/CrN .- multilayer coatings deposited on tool steel.- Surf. and Coating Technol. 200, 165-169 (2005)

Menou N., Castagnos A-M., Muller Ch., Goguenheim D., Goux L., Wouters D.J., Hodeau J-L., Barrett R.- Degradation and recovery of polarization under synchrotron X-rays in SrBi2Ta2O9 ferroelectric capacitors.- Journal of Applied Physics, vol. 97, n° 4, p. 044106, 2005

Menou N., Muller Ch., Baturin I.S., Kuznetsov D.K., Shur V.Ya., Hodeau J-L., Schneller T.- In situ synchrotron x-ray diffraction study of electrical field induced fatigue in Pt/PbZr0.45Ti0.55O3/Pt ferroelectric capacitors.- Journal of Physics - Condensed Matter, vol. 17, p. 7681-7688, 2005

Menou N., Muller Ch., Baturin I.S., Shur V. Ya, Hodeau J-L.- Polarization fatigue in PbZr0.45Ti0.55O3-based capacitors studied from high resolution synchrotron X-ray diffraction.- Journal of Applied Physics, vol. 97, n° 6, p. 064108, 2005

Menou N., Turquat Ch., Madigou V., Muller Ch., Goux L., Lisoni J., Schwitters M. and Wouters D. J.- Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors.- Applied Physics Letters, vol. 87, p. 073502, 2005

Merabtine R., Dallas J.P., Cornet M.- Creep strengthening of Ni3(Al, Si) intermetallic alloy by ductile precipitates.- Intermetallics, vol. 13, n° 2, p. 179-186, 2005

Mertz D., Hayn R., Opahle I., Rosner H.- Calculated magnetocrystalline anisotropy and magnetic moment distribution in Li2Cu02.- Physical Review B, vol. 72, p. 085133, 2005

Michel J. P., Lacaze E., Goldmann M., Gailhanou M., de-Boissieu M., Alba M.- Revealing the structure of focal conics cores and their influence on the evolution with temperature: An x-ray study of ultra-thin 8CB films.- Mol. Cryst. and Liquid Cryst. 437, 1343-1353 (2005)

Morris S.J., Fougeres P., Bozzo-Escoubas S., Bodnar S., Gaillard S.- Simultaneous optical measurement of Ge content and doping in strained epitaxial films using a novel data-analysis technique.- Mat. Science in Semiconductor Processing, 8, 261-266 (2005)

Moth-Poulsen K., Patrone L., Stuhr-Hansen N., Christensen J.B., Bourgoin J.P., Bjornholm T.- Probing the effects of conjugation path on the electronic transmission through single molecules using scanning tunneling microscopy.- Nano Letters, vol. 5, n° 4, p. 783-, 2005

Munteanu D., Autran J.L., Harrison S.- Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-k gate dielectrics.- Journal of Non-Crystalline Solids, vol. 351, p. 1911-1918, 2005

Munteanu D., Autran J.L., Harrison S., Nehari K., Tintori O., Skotnicki T.- Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET.- Molecular Simulation, vol. 31, p. 831-837, 2005

Nemouchi F., Mangelinck D. Bergman C., Gas P.- Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate.- Applied Physics Letters, vol. 86, p. 041903-05, 2005

Nguyen Thi H., Dabo Y., Drevet B., Dupouy M.D., Camel D., Billia B., Hunt J.D., Chilton A.- Directional solidification of Al – 1.5 wt% Ni alloys under diffusion transport in space and fluid-flow localisation on earth.- Journal of Crystal Growth, vol. 281, p. 654-, 2005

Nguyen Thi H., Reinhart G., Zhou B.H., Billia B., Liu Q.S., Lyubimova T.P., Roux B.- Tailoring of dendritic microstructure in solidification processing by crucible vibration.- Journal of Crystal Growth, vol. 275, p. E1579-, 2005

Nyeki J., C. Girardeaux, Z. Erdelyi, A. Csik, L. Daroczi, G. Langer, D.L. Beke, A. Rolland, J. Bernardini and G. Erdélyi.- Sb diffusion and segregation in amorphous Si thin films.- Defect and Diffusion Forum, vol. 237-240, p. 1246, 2005

Nyeki J., Erdelyi G., Lexcellent C., Bernardini J., Beke D.L.- Grain boundary diffusion of Ni in NiTi shape-memory alloy.- Defect and Diffusion Forum, vol. 237-240, p. 543, 2005

Ottaviani L., Barakel D. , Vervisch V., Pasquinelli M.- Electrical characterizations of hydrogenated 4H-SiC epitaxial samples.- Solid State Phenomena 108-109, 677-682 (2005)

Ottaviani L., Idrissi H., Hidalgo P., Lancin M., Pichaud B.- Structure and electrical studies of partial dislocations and faults in (11-20)-oriented 4H-SiC.- Phys. Stat Sol C 6, 1792-6 (2005)

Ouzaouit K., Benlhachemi A., Aneflous L., Benyaich H., Gavarri J.R., Musso J.A.- The influence of synthesis way and dopant on the crystallite sizes of ceria.- Journal de Physique IV France, vol. 123, p. 125-130, 2005

Palais O., Lemiti M., Lelievre J-F. , Martinuzzi S.- Comparison of efficiencies of different surface passivations Applied to crystalline silicon.- Solid State Phenom. 108-109, 585 (2005)

Paret J.- Long-time dynamics of the three-dimensional biaxial Grinfeld instability.- Physical Review E, vol. 72, p. 011105, 2005

Paris S., Gaffet E., Vrel D., Thiaudiere D., Gailhanou M., Bernard F.- Time-resolved XRD experiments for a fine description of mechanisms induced during reactive sintering.- Science of Sintering 37 (1): 27-34 (2005)

Pedio M., Borgatti F., Giglia A., Mahne N., Nannarone S., Giovannini S., Cepek C., Magnano E., Giovanelli L., Bertoni G., Spiller E., Sancrotti M., Floreano L., Gotter R., Morgante A.- Annealing temperature dependence of C60 on silicon surfaces : bond evolution and fragmentation as detected by NEXAFS.- Physica Scripta, vol. T115, p. 695-, 2005

Perniola L., Bernardini S., Iannaccone G., Masson P., DeSalvo B., Ghibaudo G., Gerardi C.- Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories.- IEEE Transactions on Nanotechnology, vol. 4, n° 3, p. 360–368, 2005

Pfeiffer O., Gnecco E., Zimmerli L., Maier S., Meyer E., Nony L., Bennewitz R., Diederich F., Fang H., Bonifazi D.- Force microscopy on insulators : Imaging of organic molecules.- Journal of Physics - Conference Series, vol. 19, p. 166–174, 2005

Portal J.M., Aziza H., Née D.- EEPROM diagnosis based on threshold voltage embedded measurement.- Journal of Electronic Testing (JETTA), vol. 21, p. 33-42, 2005

Radtke G., Maunders C., Lazar S., de Groot F.M.F, Botton G.A.- The role of Mn in the electronic structure of Ba3Ti2MnO9.- J. Sol. Stat. Chem. 178, 3436 (2005)

Ranica R., Villaret A., Malinge P., Candelier P., Masson P., Bouchakour R., Mazoyer P., Skotnicki T.- Modelling of the 1T-Bulk capacitor-less DRAM cell with improved performances : the way to scaling.- Solid-State Electronics, Solid-State Electronics, vol. 12, n° 12, p. 1776-1777, 2005

Ranica R., Villaret A., Mazoyer P., Monfray S., Chanemougame D., Masson P., Regnier A., Dray C., Waltz P., Bez R., Bouchakour R., Skotnicki T.- A new 40nm SONos structure based on backside trapping for nanoscale memories.- IEEE Transactions on Nanotechnology, vol. 4, n° 5, p. 581–587, 2005

Razafindramora J., P. Canet, F. Lalande, R. Bouchakour, P. Boivin, J-M. Mirabel.- Study of stressed oxides degradation : application to the prediction of a non-volatile memory cell endurance.- Journal of Non-Crystalline Solids, vol. 351, p. 1878-1884, 2005

Regnier A., Laffont R., Bouchakour R., Mirabel J.M.- A new architecture of dual control gate EEPROM.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1906-1910, 2005

Regula G., Lancin M., Idrissi H., Pichaud B., Douin J.- Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC.- Phil. Mag. Letters 85, 259-267 (2005)

Reinhart G., Mangelinck-Noël N., Nguyen-Thi H., Schenk T., Gastaldi J., Billia B., Pino P., Härtwig J., Baruchel J.- Investigation of columnar-equiaxed transition and equiaxed growth of aluminium based alloys by X-ray radiography.- Materials Science and Engineering A, vol. 413-414, p. 384-388, 2005

Rey-Tauriac Y., Badoc J., Reynard B., Bianchi R.A., Lachenal D., Bravaix A.- Hot-carrier reliability of 20V MOS transistors in 0.13 µm CMOS technology.- Microelectronics Reliability, vol. 45, n° 9-11, p. 1349-1354, 2005

Rivero C., Gergaud P., Gailhanou M., Boivin P., Fornara P., Niel S., Thomas O.- Stress developement and relaxation during reaction of a cobalt film with a silicon substrate.- Defect and Diffusion Forum 237-240, 518-523 (2005)

Rivero C., Gergaud P., Gailhanou M., Thomas O., Froment B., Jaouen H., Carron V.- Combined synchrotron x-ray diffraction and wafer curvature measurements .- during Ni-Si reactive film formation .- Appl. Phys. Letters 87, 48-50 (2005)

Robert-Inacio F.- Symmetry parameters for 3D pattern classification.- Pattern Recognition Letters, vol. 26, n° 11, p. 1732-1739, 2005

Roussel J.M., Bellon P.- Long-lived transient vacancy distribution in multilayers.- Defect and Diffusion Forum, 237-240, 531-536 (2005)

Salhi F., Berrada A., Aride J., Bernardini J., Moya G.- Analysis of isothermal and non isothermal recrystallization kinetics of straight rolled silver.- Physical and Chemical News, vol. 23, p. 1-8, 2005

Schäfer S., Raymond L., Albinet G.- Dielectric resonances of ordered passive arrays.- European Physical Journal B, vol. 43, p. 81-, 2005

Schenk T., Gastaldi J., Nguyen Thi H., Reinhart G., Mangelinck-Noel N., Klein H., Hartwig J., Grushko B., Billia B., Baruchel J.- Application of Synchrotron X-ray imaging to the study of directional solidification of aluminium-based alloys.- Journal of Crystal Growth, vol.275, p. 201-, 2005

Scheybal A., Ramsvik T., Bertschinger R., Putero M., Nolting F., Jung T.A.- Induced magnetic ordering in a molecular monolayer.- Chemical Physics Letters, vol. 411, n° 1-3, p. 214-220, 2005

Si Ahmed A., Kansy J., Zarbout K., Moya G., Liebault J., Goeuriot D.- Microstructural origin of the dielectric breakdown strength in alumina: A study by positron lifetime spectroscopy.- Journal of the European Ceramic Society, vol. 25, p. 2813-2816, 2005

Stanoi D., Socol G., Grigorescu C., Guinneton F., MonnereauO., Tortet L., Zhang T., Mihailescu I.N.- Chromium oxides thin films prepared and coated in situ with gold by pulsed laser deposition.- Materials Science and Engineering B, vol. 118, n° 1-3, p. 74-78, 2005

Suchodolskis A., Assmus W., Babonas G.-J., Giovanelli L., Karlsson U. O., Karpus V., Le Lay G., Reza A., Uhrig E.- Photoemission and optical spectroscopy of i-ZnMgEr quasicrystal.- Acta Physica Polonica A, vol. 107, n° 2, p. 412-, 2005

Testemale D., Coulet M-V., Hazemann J-L., Simon J.-P., Bley F., Geaymond O., Argoud R..- Small angle x-ray scattering of a supercritical electrolyte solution: The effect of density fluctuations on the hydration of ions.- Journ. Chem.Phys. 122, 194505-1-7 (2005)

Texier M., Proult A., Bonneville J.- On the plasticity of Al-Cu-Fe quasicrystals .- Mat. Sci. & Engin. A, 400-401, 315 (2005)

Texier M., Thilly L., Proult A., Bonneville J., Rabier J.- Shear experiments under confining pressure conditions of Al-Pd-Mn single quasicrystals.- Mat. Sci. & Engin. A, 400-401, 311 (2005)

Thomas O., Gergaud P., Rivero C., d’Heurle F.- Stress development during the reactive formation of silicide films.- Defect and Diffusion Forum 237-240, 801-812 (2005)

Tortet L., Guinneton F., Monnereau O., Stanoi D., Socol G., Mihailescu I.N., Zhang T., Grigorescu C.- Optimization of targets for Pulsed Laser Deposition of CrO2 thin films.- Crystal Research and Technology, vol. 12, n° 40, p. 1124-1128, 2005

Trapes C., Goguenheim D., Bravaix A.- Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.- Microelectronics Reliability, vol. 45, p. 883-886, 2005

Trapes C., Goguenheim D., Bravaix A.- Ultrathin oxide reliability after combined constant voltage stress and substrate hot electron injection.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1860-1865, 2005

Trivedi R., Bergeon N., Billia B., Echebarria B., Karma A., Liu S., Mangelinck N., Weiss C.- In situ characterization of interface-microstructure dynamics in 3D-directional solidification of model transparent alloys.- Microgravity Science Technology, vol. 16, p. 133-, 2005

Valerio E., Grigorescu C., Manea S.A., Guinneton F., Branford W., Autric M.- Pulsed laser deposition of thin films of various full Heusler alloys Co2MnX (X=Si, Ga, Ge, Sn, SbSn) at moderate temperature.- Applied Surface Science, vol. 247, n° 1-4, p. 151-156, 2005

Villaret A., Ranica R., Malinge P., Masson P., Mazoyer P., Candelier P., Skotnicki T.- Further insight on the modelling and characterization of triple-well capacitorless DRAMs.- IEEE Transactions on Electron Devices, vol. 52, n° 11, p. 2447-2454, 2005

Weiss C., Bergeon N., Mangelinck-Noël N., Billia B.- Effects of the interface curvature on cellular and dendritic microstructures.- Materials Science and Engineering A, vol. 413-414, p. 296-301, 2005

Zahra A-M., Zahra C. , Dumont M.- Effects of Ag or Si on precipitation in the alloy Al-2.5%Cu-1.5%Mg.- Phil. Mag. A 85 , 3735-3754 (2005)

Zaïdat K., Ouled-Khachroum T., Vian G., Garnier C., Mangelinck-Noël N., Dupouy M.D., Moreau R.- Directional solidification of refined Al-3.5 wt % Ni under natural convection and under a forced flow driven by a travelling magnetic field.- Journal of Crystal Growth, vol. 275, p. E1501-, 2005

Zarbout K., Moya G., Kallel A.- Determination of the electron beam irradiated area by using a new procedure deriving from the electron beam lithography technique.- Nuclear Instruments and Methods in Physics Research B, vol. 234, p. 261-268, 2005

Zarbout K., Moya-Siesse D., Moya G., Kallel A.- Determination of the electron beam irradiated area by using a charging effect in oxide surfaces.- Journal of Non-Crystalline Solids, vol. 351, p. 1791-1795, 2005

 

2006

Abel M., Oison V., Koudia M., Maurel C., Katan C. Porte L.- Designing a new two-dimensional molecular layout by hydrogen bonding.- ChemPhysChem, vol. 7, p. 82, 2006

Ahoussou A.P., Rogez J., Kone A.- Enthalpy of mixing in 0.8[xB2O3-(1-x)P2O5]-0.2Na2O glass system at 298 K.- Thermochimica Acta, vol. 441, p. 96-100, 2006

Ahoussou A.P., Rogez J., Kone A.- Enthalpy of mixing in 0.8[xB2O3-(1-x)SiO2]-0.2K2O glass system at 973 K.- Thermochimica Acta, vol. 447, p. 109-111, 2006

Arab M., F. Berger, F. Picaud, Ch. Ramseyer, J. Glory and M.  Mayne - L’hermite.- Direct growth of aligned multi walled carbon nanotubes as a tool to detect ammonia at room temperature.- Chemical Physics Letters, vol. 433, p. 175, 2006

Arab M., F. Picaud, Ch. Ramseyer, R. M. Babaa, F. Valsaque and E. McRae.- Determination of the single wall carbon nanotube opening ratio by means of rare gas adsorption.- Chemical Physics Letters, vol. 423, p. 183, 2006

Ardhaoui K., Coulet M-V., Ben-Cherifa A., Carpena J., Rogez J., Jemal M.- Standard enthalpy of formation of neodymium fluorbritholites.- Thermochimica Acta, vol. 444, n° 2, p. 190-194, 2006

Ardhaoui K., Rogez J., Ben Cherifa A., Jemal M., Satre P.- Standard enthalpy of formation of lanthanium oxybritholites.- Journal of Thermal Analysis and Calorimetry, vol. 86, p. 553-559, 2006

Auguet C., J. L. Seguin, F. Martorell, F. Moll, V. Torra and J. Lerchner.- Identification of micro-scale calorimetric devices. Part V. Basic properties for gas–solid reactions.- Journal of Thermal Analysis and Calorimetry, vol. 86, n° 2, p. 521–529, 2006

Ayoub J.-P., Favre L., Ronda A., Berbezier I., De Padova P., Olivier B.- Structural and magnetic properties of GeMn diluted magnetic semiconductor.- Materials Science in Semiconductor Processing, vol. 9, n° 4-5 , p. 832-835, 2006

Barthélemy H.- Foreword - special issue of TAISA'2005.- Springer Analog Integrated Circuit and Signal Processing, published online http://springerlink.metapress.com/content/1573-1979/, to be published in printed version, ISSN 0925-1030 (Print) 1573-1979 (Online)

Batra K. , Sharma R.-P., Verga A.D.- Stability analysis of nonlinear evolution patterns of modulational instability and chaos using one-dimensional Zakharov equations.- Journal of Plasma Physics, vol. 72, p. 671, 2006

Bécu S., S. Crémer, J.L. Autran.- Microscopic model for dielectric constant in metal-insulator-metal capacitors with high permittivity metallic oxides.- Applied Physics Letters, vol. 88, p. 052902-1, 2006

Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M.- Formation and ordering of Ge nanodots on SiO2.- Materials Science in Semiconductor Processing, vol. 9, p. 812, 2006

Berbezier I., Karmous A., Ronda A., Sgarlata A., Balzarotti A., De Crescenzi M.- Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films.- Applied Physics Letters, vol. 89, p. 063122, 2006

Bergman C.,Girardeaux C., Perrin C., Gas P., Chatain D., Dubois J.M., Rivier N.R.- Wetting of decagonal Al13Co4 and cubic AlCo thin films by liquid Pb.- Philosophical Magazine, vol. 86, n° 6­8, p. 849­854, 2006

Bernardini J,  Girardeaux C., Rolland A.- Experimental evidence of iron segregation in copper grain boundaries as deduced from type B diffusion measurements.- Defect and Diffusion Forum, vol. 249, p. 161, 2006

Bertaina S., Barbara B., Giraud R., Malkin B.Z., Vanuynin M.V., Pominov A.I., Stolov A.L., and Tkachuk A.M.- Cross-relaxation and phonon bottleneck effects on magnetization dynamics in LiYF4:Ho3+.- Physical Review B, vol. 74, p. 184421, 2006

Bertaina S., Hayn R.- Exchange integrals and magnetization distribution in BaCu2X2O7 (X=Ge, Si).- Physical Review B, vol. 73, p. 212409, 2006

Billia B., Nguyen-Thi H., Reinhart G., Mangelinck N., Gastaldi J., Schenk T., Hartwig J., Baruchel J., Cristiglio V., Grushko B., Klein H.- Studies by in situ and real-time synchrotron imaging of interface dynamics and defect formation in solidification processing.- Advances in Science and Technology, vol. 46, p. 1-10, 2006

Boa D., Hassam S., Kotchi K.P., Rogez J.- Thermodynamic investigation of the moderately dilute liquid Bi-Fe-Sb.- Thermochimica Acta, vol. 444, p. 86-90, 2006

Borivent D., Paret J., Billia B.- Reactive interdiffusion in the binary system Ni-Si : Morphology of the Ni3Si2 phase.- Journal of Phase Equilibria and Diffusion, vol. 27, p. 563, 2006

Bouchet D., S. Lartigue-Korinek, R. Molins, Thibault J.- Yttrium segregation and intergranular defects in alumina.- Philosophical Magazine, vol. 86, p. 1401-1413, 2006

Brutin D., Tadrist L.- Destabilization mechanisms and scaling laws of convective boiling in a minichannel.- Journal of Thermophysics and Heat Transfer, sous-presse, 2006

Cacho F., G. Cailletaud, C. Rivero, P. Gergaud, O. Thomas, H. Jaouen.- Numerical modeling of stress build up during nickel silicidation under anisothermal annealing.- Materials Science and Engineering B, vol. 135, p. 95, 2006

Cañas-Ventura M. E., Klappenberger F., Clair S., Pons S., Kern K., Brune H., Strunskus T. , Wöll C., Fasel R., Barth J. V.- Coexistence of one- and two-dimensional supramolecular assemblies of terephthalic acid on Pd(111) due to self-limiting deprotonation.- Journal of Chemical Physics, vol.125, p.184710, 2006

Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio.- Investigation of 30nm gate-all-around MOSFET sensitivity to heavy ions: a 3-D simulation study.- IEEE Transactions on Nuclear Science, vol. 53, n° 4, p. 1950-1958, 2006

Castellani-Coulié K., D. Munteanu, J.L. Autran, V. Ferlet-Cavrois, P. Paillet, J. Baggio.- Analysis of 45nm multi-gate transistors behavior under heavy ion irradiation by 3D device simulation.- IEEE Transactions on Nuclear Science, vol. 53, n° 6, p. 3265-3270, 2006

Chabriel G., Barrère J.- Instantaneous formulation for blind separation of propagating waves.- IEEE Transactions on Signal Processing, vol. 54, n° 1, p. 49-58, 2006

Chanier T. , Sargolzaei M. , Opahle I., Hayn R., Koepernik K.- LSDA+U versus LSDA: Towards a better description of the magnetic nearest-neighbor exchange in Co- and Mn-doped ZnO.- Physical Review B, vol. 73, p. 134418, 2006

Cheynet de Beaupré V., Rahajandraibe W.,Zaid L.- 2.45-GHz-CMOS temperature compensated multi-controlled oscillator for IEEE 802.15 wireless PAN.- Springer Analog Integrated Circuit and Signal Processing, published online http://springerlink.metapress.com/content/1573-1979/, to be published in printed version, ISSN 0925-1030 (Print) 1573-1979 (Online)

Condorelli G.G., Favazza M., Bedoya C., Baeri A., Anastasi G., Lo Nigro R., Menou N., Muller C., Lisoni J., Wouters D.J., Fragalà I.L.- Metal organic chemical vapor deposition of ferroelectric SrBi2Ta2O9 films from fluorine-containing precursor system.- Chemistry of Materials, vol. 18, no. 4, p. 1016-1022, 2006

Contaret T., G. Ghibaudo, A. Ferron and F. Bœuf.- Excess drain noise simulation in ultrathin oxides MOSFETs.- Journal of Computional Electronics, vol. 5, n° 2-3, p. 187-192, 2006

Contaret T., K. Romanjek, T. Boutchacha, G. Ghibaudo, and F. Bœuf.- Low frequency noise characterization and modeling in ultrathin oxide MOSFETs.- Solid State Electronics, vol. 50, p. 63-68, 2006

Coulet M.-V., Bellissent R., Bichara C.- Closed loop miscibility gap in sulphur-tellurium melts : structural evidences and thermodynamic modelling.- Journal of Physics : Condens. Matter, vol. 18, n° 50, p.11471−11486, 2006

Coupeau C., Texier M., Joulain A., Bonneville J.- Nanoindentation-induced deformation in Al-Pd-Mn single quasicrystals.- Applied Physics Letters, vol. 88, p. 073103, 2006

Courtade L., Muller Ch., Andreoli G., Turquat Ch., Goux L., Wouters D.J.- Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays.- Applied Physics Letters, vol. 89, no. 11, p. 113501(1-3), 2006

Couzinié J-P., Thibault J., Décamps B., Priester L.- Extended interfacial structure between two assymetrical facets of a S=9 GB in Cu.- International Journal of Materials Research, vol. 97, p. 7, 2006

Dalmas J., Oughaddou H., Lelay G., Aufray B., Treglia G., Girardeaux C., Bernardini J, Fujii J., Panaccione G.- Photoelectron spectroscopy study of Pb/Ag(111) in the submonolayer range.- Surface Science, vol. 600, n° 6, p. 1227-1230, 2006

Dehaese N., Bourdel S., Gaubert J., Bachelet Y., Barthélemy H.- Design method for CMOS current-source modes power amplifiers based on PAE optimization.- Springer Analog Integrated Circuit and Signal Processing, published online http://springerlink.metapress.com/content/1573-1979/, to be published in printed version, ISSN 0925-1030 (Print) 1573-1979 (Online)

Deschamps A., Bley F., Lae L., Dumont M., Perrard F.- Characterisation and modelling of non-isothermal precipitation in metallic systems.- Advanced Engineering Materials, vol. 8, n° 12, 2006

Dolocan V. O., P. Lejay, D. Mailly and Hasselbach K.- Observation of two species of vortices in the anisotropic spin-triplet superconductorSr2RuO4.- Physical Review B, vol. 74, p. 144505, 2006

Dubois S, Palais O, Pasquinelli M, et al.- Influence of iron contamination on the performances of single-crystalline silicon solar cells : computed and experimental results.- Journal of Applied Physics, vol. 100, n° 2, 2006

Dubois S, Palais O, Pasquinelli M, Martinuzzi S, Jaussaud C.- Influence of  substitutional metallic Impurities on the performances of P-type crystalline silicon solar cells : the case of gold.- Journal of Applied Physics, vol. 100, n° 12, 2006

Dubois S, Palais O, Ribeyron P.J.- Determination at 300 K of the hole capture cross-section of chromium-boron pairs in p-type silicon.- Applied Physics Letters, vol. 89, n° 23, 2006

Dumont M., Steuwer A., Deschamps A., Peel M., Withers P.J.- Microstructure mapping in friction stir welds of 7449 aluminium alloy by synchrotron X-rays.- Acta Materialia, vol. 54, n° 18, p. 4793-4801, 2006

Ehouarne L., Putero M, Mangelinck D, Nemouchi F, Bigault T, Ziegler E and Coppard R.- In situ study of the growth kinetics and interfacial roughness during the first stages of nickel-silicide formation.- Microelectronics Engineering, vol. 83, p. 2253-2257, 2006

El Bouayadi R., Regula G., Lancin M., Pichaud B.,Desvignes M.- Influence of metal trapping on the shape of cavities induced by high energy He+ implantation.- Journal of Applied Physics, vol. 99, p. 43509, 2006

Escoubas L., Flory F., Simon J.J., Torchio P.- Guided-wave characterizations of optical, thermal and electro-optical properties of thin film materials.- International Journal of Materials and Product Technology Special Issue: “Challenges in Materials Properties Measurements”, Editor B. Vinet (Inderscience), vol. 26, n° 3-4, p. 372-387,  2006

Eustathopoulos N., Koltsov A., Dumont M., Fiqiri-Hodaj.- Influence of Ti on wetting of AlN by Ni-base alloys.- Mat. Sci. Engineer. A, vol. 415, n° 1-2, p. 171-176, 2006

Favre L., Dupuis V., Bernstein E., Mélinon P., Pérez A., Stanescu S., Epicier T., Simon J.-P.- Structural and magnetic properties of CoPt mixed clusters.- Physical Review B, .- vol. 74, p. 014439, 2006

Frisch T. ,Verga A.- Effect of step stiffness and diffusion anisotropy on the meandering of a growing vicinal surface.- Physical Review Letters, vol. 96, p. 166104, 2006

Gandin Ch.‑A., Billia B., Zimmermann G., Browne D. J., Dupouy M‑D., Guillemot G., Nguyen‑Thi H., Mangelinck‑Noël N., Reinhart G., Sturz L., Mc Fadden S., Banaszek J., Fautrelle Y., Zaidat K., Ciobanas A.- Columnar-to-equiaxed transition in solidification processing (CETSOL): a project of the European Space Agency – Microgravity Applications Promotion Programme.- Materials Science Forum, vol. 508, p. 393-404, 2006

Gastaldi J., Schenk T., Reinhart G., Klein H., Härtwig J., Mangelinck-Noël N., Grushko B., Nguyen Thi H., Pino P., Billia B., Baruchel J.- In situ observation of pore evolution during melting and solidification of Al-Pd-Mn quasicrystals by synchrotron X-ray radiography.- Philosophical Magazine, vol. 86, n° 3-5, p. 335-340, 2006

Gergaud P., Goudeau P., Sicardy O., Tamura N., Thomas O.- Residual stress analysis in micro- and nao-structures materials by X-ray diffraction.- International Journal of Materials and Product Technology, vol. 26, p. 3-4, 2006

Gheribi A, Rogez J., Marinelli F., Mathieu J.C., Record M.C.- Introduction of pressure in binary phase diagrams calculations. Aplication to the Ag-Cu system.- Calphad, vol. 31, n° 3, p. 380-389, 2006

Gheribi A., Rogez J., Mathieu J.C.- Magnetic contribution to the Gibbs energy of elements versus temperature and pressure.- Journal of Physics and Chemistry of Solids, vol. 67, p. 1719-1723, 2006

Gheribi A., Roussel J.M., Rogez J.- Phenomenological Hugoniot curves for transition metals up to 1Tpa.- Phys. Rev. B, sous presse, 2006

Girardeaux C., Aufray B., Bernardini J., Dallaporta H., Le Lay G. and Soukiassian P.- Préface.- Journal de Physique IV - Proceedings, vol. 132, III-3, 2006

Gomes J.C., de Souza C.P., Gomes U.U., Gavarri J.R., Dallas J.P., Leroux C.- Leaching process of cerium extraction from mixture of cerite-monazite mineral.- Materials Science Forum, vol. 514-516, p. 1653-1657, 2006

Gomri S., Seguin J.L., Guérin J., Aguir K.- Adsorption–desorption noise in gas sensors : Modelling using Langmuir and Wolkenstein models for adsorption.- Sensors and Actuators B : Chemical, vol. 114, n° 1, p. 451-459, 2006

Guerin J., Aguir K., Bendahan M.- Modeling of the conduction in a WO3 thin film as ozone sensor.- Sensors and Actuators B: Chemical, vol. 119, n° 1, p. 327-334, 2006

Guillermet O., Glachant A., Mossoyan M., Mossoyan J.C.- Near monolayer deposition of palladium phthalocyanine and perylene tetracarboxylic diimide on Au(001) : a STM study.- Journal de Physique IV - Proceedings, vol. 132, p. 77-81, 2006

Hamma H., Rasmussen S.B., Rogez J., Alaoui-El-Belghiti M., Eriksen K.M., Fehrmann R.- Conductivity, calorimetry and phase diagram of the NaHSO4-KHSO4 system.- Thermochimica Acta, vol. 440, p. 200-204, 2006

Hankevycha V., Kyunga B., Daré A.M., Sénéchal D. and Tremblay A.-M.S.- Strong- and weak-coupling mechanisms for pseudogap in electron-doped cuprates.- Journal of Physics and Chemistry of Solids, vol. 67, n° 1-3, p. 189-192, 2006

Hayn R., Lombardo P., Matho K.- Spectral density of the Hubbard model by the continued fraction method.- Physical Review B, vol. 74, n° 20, p. 205124, 2006

Hoummada K., Cadel E., Mangelinck D., Perrin-Pellegrino C., Blavette D., Deconihout B.- First stages of the formation of Ni silicide by atom probe tomography.- Applied Physics Letters, vol. 89, n° 18, p. 81905, 2006

Hoummada K., D. Mangelinck, C. Perrin, C. Bergman, Osipowicz T.- Mécanismes de croissance à basse température des siliciures de nickel alliés : Ni/Si, Ni(Pt)/Si et Ni(Pd)/Si.- 1er Congrès International sur La Basse Dimensionalité et la NanoTechnologie, El Jadida, Maroc, 1-3 Novembre 2006

Hoummada K., Mangelinck D., Perrin C., Gas P., Carron V., Holliger P., et Ziegler E.- Redistribution of arsenic during the reaction of nickel thin films with silicon at relatively high temperature : role of agglomeration.- Microelectronics Engineering, vol. 83, n° 11, p. 2264-2267, 2006

Huard V., Denais M., Parthasarathy C.- NBTI degradation: From physical mechanisms to modelling.- Microelectronics Reliability, vol. 46, n° 1, p. 1-23, 2006

Hÿtch M., Putaux J-L., Thibault J.- Stress and strain around grain boundary dislocations mesured by HREM.- Philosophical Magazine, vol. 86, p. 4641-4656, 2006

Jelínek M., Kocourek T., Flory F., Escoubas L., Mazingue T., Myslík V., Vrata M., Fryçek R., Vyslou F.- Laser-deposited thin films for butane detection.- Laser Physics, vol. 16, n° 2, p. 217 –222, 2006

Juennard N., Borloz B., Jauffret C., Xerri B.- Classification by stochastic matched filtering.- WSEAS Transactions on Signal Processing, vol. 2, n° 2, p. 197-202, 2006

Kaabi H., Mliki N., Cheynet M., Saikaly W., Gilbert O., Bessais B., Yangui B., Charai A.- Structural and optical properties of vapour-etching based porous silicon.- Cryst. Res. Technol., vol. 41, p. 154, 2006

Karmous A. Berbezier I., Ronda A.- Formation and ordering of Ge nanocrystals on SiO2.- Physical Review B, vol. 73, n° 7, p. 075323, 2006

Karpus V., Suchodolskis A.,  Karlsson U.O., Le Lay G., Giovanelli L.,  Assmus W., Brühne S. , Uhrig E.- Mg 2p shallow core-level and local atomic structure of i-ZnMgRE quasicrystals.- Applied Surface Science, vol. 252 , p. 5411, 2006

Kopia A., Chmielowska M., Leroux Ch., Gavarri J.R., Kusiński J.- Structural analyses of Nd doped CeO2 thin films deposited by means of laser ablation.- Journal of Microscopy, vol. 223, p. 3, 2006

Koudia M, Abel M, Maurel C, Bliek A, Catalin D, Mossoyan M, Mossoyan J-C, Porte L.- Influence of chlorine substitution on the self-assembly of zinc phthalocyanine.- J. Phys. Chem. B, vol. 110, p. 10058,  2006

Kuzian R., Daré A.M., Sati P., and Hayn R.- Crystal-field theory of Co2+ in doped ZnO.- Physical Review B, vol. 74, p.155201, 2006

Kuznetsov D.K., Baturin I.S.,  Shur V. Ya., Menou N., Muller Ch., Schneller T., Sternberg A.- Kinetics of polarization reversal in irradiated thin PZT films.- Physics of the Solid State, vol. 48, no. 6, p. 1174-1176, 2006

Kuznetsov D.K., Shur V.Ya., Baturin I.S., Menou N., Muller Ch., Schneller T., Sternberg A.- Effect of penetrating irradiation on polarization reversal in PZT thin films.- Ferroelectrics, vol. 340, p. 161-167, 2006

Labidi A., Gillet E., Delamare R., Maaref M., Aguir K.- Ethanol and ozone sensing characteristics of WO3 based sensors activated by Au and Pd.- Sensors and Actuators B: Chemical, vol. 120, n° 1, p. 338-345, 2006

Labidi A., Lambert-Mauriat C., Jacolin C., Bendahan M., Maaref M., Aguir K.- DC and AC Characterizations of WO3 sensors under organic vapors.- Sensors and Actuators B: Chemical, vol. 119, n° 2, p. 374-379, 2006

Lambert-Mauriat C., Oison V.- Density-functional study of oxygen vacancies in monoclinic tungsten oxide.- Journal of Physics: Condensed Matter, vol. 18, p. 7361-7371, 2006

Lambert-Mauriat C., Oison V.- Density-functional study of oxygen vacancies in monoclinic tungsten oxide.- Journal of Physics : Condensed Matter, vol. 18, p. 7361, 2006

Lancin M., Regula G., Douin J., Idrissi H., Ottaviani L., Pichaud B.- Investigation of mechanical stress-induced double stacking faults in (11-20) highly n-doped 4H-SiC combining optical microscopy TEM contrast simulation and dislocation core reconstruction.- Mat. Sci. Forum, vol. 527-529, p. 379-82, 2006

Largeron C., Quesnel E., Thibault J.- Interface growth in ion sputtering deposited Mo/Si multilayers.- Philosophical Magazine, vol. 86, p. 2865-2879, 2006

Leandri C., Aufray B., Le Lay G., Girardeaux C., Ottaviani C. and Cricenti A.- Ordered silicon structures on silver (100) at 230°C.- Journal de Physique IV - Proceedings, vol. 132, p. 311, 2006

Liu Q.S., Zhou B.H., Liu R., Nguyen-Thi H., Billia B.- Oscillatory instabilities of two-layer Rayleigh-Marangoni-Bénard convection.- Acta Astronautica, vol. 59, p. 40, 2006

Lombardo P., Hayn R. Japaridze G.I.- Insulator-metal-insulator transition and selective spectral-weight transfer in a disordered strongly correlated system.- Physical Review B, vol. 74, p. 085116, 2006

Loppacher Ch., Zerweck U., Eng L.M., Gemming S., Seifert G., Olbrich C., Morawetz K., Schreiber M.- Adsorption PTCDA  onpartially KBr covered Ag(111) substrate.- Nanotechnology, vol. 17, p. 1586, 2006

Luciani X., Patrone L., Courmontagne P.- Nano-domains segmentation on AFM images.- Journal de Physique IV - Proceedings, vol. 132, p. 237-241, 2006

Mangelinck D.- Effect of a third element on the stability of NiSi thin films on Si.- Defect and Diffusion Forum, vol. 249, p. 127-134, 2006

Mangelinck D.- Synthèse et stabilité des interfaces siliciures/semiconducteurs: approche thermocinétique.- 1er Congrès International sur La Basse Dimensionalité et la NanoTechnologie, El Jadida, Maroc, 1-3 Novembre 2006

Martinuzzi S., Palais O., Ostapenko S.- Scanning techniques applied to the characterisation of p and n type multicristalline silicon.- Mat. Sci. In Semiconductor Processing, vol. 9, n° 1-3, p. 230-235, 2006

Mazingue T., Escoubas L., Spalluto L., Flory F.,  Jacquouton P., Perrone A., Kaminska E., Piotrowska A., Mihailescu I., Atanasov P.- Optical characterizations of ZnO, Sn02 and TiO2 thin films for butane detection.- Applied Optics, vol. 45, n° 7, p. 1425 – 1435, 2006

Meillère S., Barthélemy H., Martin M.- 13.56 MHz CMOS transceiver for RFID applications.- Springer Analog Integrated Circuit and Signal Processing, published online http://springerlink.metapress.com/content/1573-1979/, to be published in printed version, ISSN 0925-1030 (Print) 1573-1979 (Online)

Meltchakov E., Vidal V., Faik H., Casanove M.J., Vidal B.- Performance of multilayer coatings in relationship to microstructure of metal layers. Characterization and optical properties of Mo/Si multilayers in extreme ultra-violet and x-ray ranges.- Journal of Physics : Condensed Matter, vol. 18, p. 3355-3365, 2006

Menou N., Muller Ch., Goux L., Barrett R., Lisoni J.G., Schwitters M., Wouters D.J.- Microstructural analysis of integrated pin-shaped 2D and 3D ferroelectric capacitors from micro-focused synchrotron x-ray techniques.- Journal of Applied Crystallography, vol. 39, no. 3, p. 376-384, 2006

Meolans J., Graur I., Perrier P., Zeitoun D., Aguir K., Bendahan M.- Isothermal gas flows in microchannels : physical parameters profiles and mass flow rates.- Houille Blanche-Revue Internationale de l’Eau, vol. 1, p. 34-39, 2006

Merlen A., P. Toulemonde, N. Bendiab, A. Aouizerat, J. L. Sauvajol, G. Montagnac, H. Cardon, P Petit,  A. San Miguel.- Raman spectroscopy of single wall carbon nanotubes under pressure : effect of the pressure transmitting medium.- Physica Status Solidi B, vol. 243, p. 690-, 2006

Michel J.P., Lacaze E., Goldmann M., Gailhanou M., de Boissieu M., Alba M.- Structure of smectic defect cores: X-ray study of 8CB liquid crystal ultrathin films.- Physical Review Letters, vol. 96, n° 2, p. 027803, 2006

Molas G., Deleruyelle D., De Salvo B., Ghibaudo G., Gély M., Perniola L., Lafond D., Deleonibus S.- Degradation of Floating-Gate Memory Reliability by Few Electron Phenomena.- IEEE Transactions on Electron Devices, vol. 53, n° 10, p. 2610-2619, 2006

Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I.- Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys.- Materials Science in Semiconductor Processing, vol. 9, p. 836, 2006

Muller C., Menou N., Barrett R., Save D.- Non destructive microstructural diagnostic of integrated ferroelectric capacitor arrays : correlation with electrical characteristics.- Journal of Applied Physics, vol. 99, n° 5, p. 054504(1-5), 2006

Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti, T. Skotnicki.- Quantum short-channel compact modeling of drain-current in double-gate MOSFET.- Solid State Electronics, vol. 50, n° 4, p. 680-686, 2006

Nehari K., Cavassilas N., Autran J.L., Bescond M., Munteanu D., Lannoo M.- Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET’s : an atomistic study.- Solid State Electronics, vol. 50, n°4, p. 680-686, 2006

Nemouchi F. , D. Mangelinck, C. Bergman, G. Clugnet, Gas P.- Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge.- Applied Physics Letters, vol. 89, p. 131920, 2006

Nemouchi F., Mangelinck D, J.L. Lábár, M. Putero, C. Bergman, Gas P.- A comparative study of nickel silicides and nickel germanides: phase formation and kinetics.- Microelectronics Engineering, vol. 83, p. 2101-2106, 2006

Ney D., Federspiel X., Thomas O., Gergaud P.- Stress induced electromigration backflow effect in copper interconnects.- IEEE Transactions on Device and Materials Reliability, vol. 6, p. 175 2006

Ney D., X. Federspiel, O. Thomas, P. Gergaud.- Stress induced electromigration backflow effect in copper interconnects.- IEEE Transactions on  Device & Materials Reliability, vol. 6, p. 175, 2006

Ngo K. A., Lauque P., Aguir K.- Identification of toxic gases using steady-state and transient responses of a gas sensor array.- Sensors and Materials, vol. 18, n° 5, 2006

Nguyen Thi H., Gastaldi J., Schenk T., Reinhart G., Mangelinck-Noël N., Cristiglio V., Billia B., Grushko B., Härtwig J., Klein H., Baruchel J.- In situ and real-time probing of quasicrystal solidification dynamics by synchrotron imaging.- Physical Review E, vol. 74, p. 031605, 2006

Nguyen Thi H., Zhou B.H., Reinhart G., Billia B., Liu Q.S., Lan C.W., Lyubimova T., Roux B.- Influence of forced convection on columnar microstructure during directional solidification of Al-Ni alloys.- Materials Science Forum, vol. 508, p. 181-186, 2006

Nony L.,  Baratoff A., Schär D., Pfeiffer O., Wetzel A., Meyer E.- A noncontact atomic force  simulator with phase-locked-loop controlled frequency detection and excitation.- Physical Review B, vol. 74, p. 235439, 2006

Nyeki J.,Girardeaux C., Rolland A., Bernardini J.- AES measurements of Sb mass transport in amorphous Si thin films.- Journal de Physique IV - Proceedings, vol. 132, p. 255-, 2006

Ouzaouit K., Benlhachemi A., Benyaich H., Dallas J.P., Villain S., Musso J.A., Gavarri J.R.- Electrical conductivity of BaCeO3 synthesized by new sol-gel method.- Journal of Condensed Matter, vol. 7, 1, p. 94-97, 2006

Parthasarathy C.R., Denais M., Huard V., Ribes G., Roy D., Guerin C., Perrier F., Vincent E., Bravaix A.- Designing in reliability in advanced CMOS technologies.- Microelectronics Reliability, vol. 46, n° 9-11, p. 1464-1471, 2006

Pascale A., Berbezier I., Ronda A., Videcoq A., Pimpinelli A.- Kinetic modeling of Si growth instabilities.- Applied Physics Letters, vol. 89, p. 104108, 2006

Pirouz P., Zhang M., Hobgood.HMcD, Lancin M., Douin J., Pichaud B.- Nitorgen doping and multiplicityof stacking faults in SiC.- Philosophical Magazine, vol. 86, n° 29-31, p. 4685-97, 2006

Pizzini S., Acciarri M., Binetti S., Cavalcoli D., Cavallini A., Chrastina D., Colombo L., Grilli E., Isella G., Lancin M., Le Donne A., Mattoni A., Peter K., Pichaud B., Poliani E., Rossi M., Sanguinetti S., Texier M., Von Kanel H.- Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications.- Material Science and Engineering B, vol. 134, p. 118, 2006

Portavoce A., Berbezier I., Ronda A., Gas P., Christensen J.S., Kuznetsov A.Yu., Svensson B.G.- Dopant diffusion in Si1-xGex thin films : Effect of epitaxial stress.- Defect and Diffusion Forum, vol. 249, p. 135, 2006

Portavoce A., Kammler M., Hull R., Reuter M.C., Ross F.M.- Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces.- Nanotechnology, vol. 17, p. 4451, 2006

Pradeilles N., Record M.C., Marin-Ayral R.M.- A derivate SHS method for Si2N2O elaboration.- Journal of the European Ceramic Society, vol. 26, n° 13, p. 2489-2495, 2006

Pradeilles N., Record M.C., Marin-Ayral R.M.- Effect of different additives on self-propagating high temperature synthesis of silicon nitride.- International Journal of SHS, vol. 15, n°2, p. 157-167, 2006

Radtke G., Botton G.A.- Probing the electronic structure of complex crystals with EELS : a study of natisites.- Journal of Physics : Condensed Matter, vol. 18, n° 15, p. 3629-3637, 2006

Radtke G., Botton G.A., Verbeeck J.- Electron inelastic scattering and anisotropy : the two-dimensional point of view.- Ultramicroscopy, vol. 106, n° 11-12, p.1082-1090, 2006

Radtke G., Lazar S., Botton G.A.- High-resolution EELS investigation of the electronic structure of ilmenites.- Physical Review B, vol. 74, n° 15, p.155117 (1-8), 2006

Rammal W., Belle C., Beguin C., Duboc C., Philouze C., Pierre J.L., Le Pape L., Bertaina S., Saint-Aman E., Torelli S.- Multifrequency EPR and redox reactivity investigations of a bismu-thiolato-dicopperII,II complex.- Inorganic Chemistry ,  vol. 45, n° 25, p. 10355-62, 2006

Rathgeb S, Moeglin JP, Boffy A, Pasquinelli M. , Palais O.- Hysteresis phenomena in reverse biased InAsSbP/InAs heterostructure.- Applied Physics Letters, vol. 89, n° 2, 2006

Raymond L., Albinet G., Tremblay A.-M.S.- Comment on "Spin Correlations in the Paramagnetic Phase and Ring Exchange in La2CuO4".- Physical Review Letters, vol. 97, p. 049701, 2006

Reinhart G., Nguyen-Thi H., Gastaldi J., Billia B.,Mangelinck-Noël N., Schenk T., Härtwig J., Baruchel J.- In situ and real time investigation of directional solidification of Al -Ni alloys by synchrotron radiography.- Material Science Forum, vol. 508, p. 75-80, 2006

Rodriguez N., Adrian J., Grosjean C., Haller G., Girardeaux C., Portavoce A.- Evaluation of scanning capacitance microscopy sample preparation by focused ion beam.- Microelectronics Reliability, vol. 46, n° 9-11, p. 1554-1557, 2006

Rohart S., Raufast C., Favre L., Bernstein E., Bonet E., Dupuis V.- Magnetic anisotropy of CoxPt1-x clusters embedded in a matrix: Influences of the cluster chemical composition and the matrix nature.- Physical Review B, vol. 74, p. 104408, 2006

Roussel J.M., Bellon P.- Interface sharpening and broadening during annealing of Cu/Ni multilayers : a kinetic Monte Carlo study.- Physical Review B, vol. 73, n° 8, p. 085403, 2006

Saitzek S., Villain S., Gavarri J.R.- Nanocrystalline Cuox-Ceo2 systems for gas sensors : FTIR analyses of catalytic reactions.- Material Science Forum, Trans Tech Publications, vol. 513, p. 1-14, 2006

Sarigiannidou E., Monroy E., Gogneau N., Radtke G., Bayle-Guillemaud P., Bellet-Amalric E., Daudin B., Rouvière J. L.- Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures.- Semiconductor Science and Technology, vol. 21, n° 5, p. 612-618, 2006

Sati P., Hayn R., Kuzian R., Régnier S., Schäfer S., Stepanov A., Morhain C., Deparis C., Laügt M., Goiran M., and Golacki Z.- Magnetic anisotropy of Co2+ as signature of intrinsic ferromagnetism in ZnO:Co.- Physical Review Letters, vol. 96, p. 017203, 2006

Sztucki M., Metzger T. H., Chamard V., Hesse A., Holý V.- Investigation of shape strain and interdiffusion in InGaAs quantum rings using grazing incidence x-ray diffraction.- J. Appl. Phys., vol. 99, p. 033519, 2006

Texier M., Cordier P.- TEM characterization of dislocations and slip systems in stishovite deformed at 14 GPa, 1300°C in the multianvil apparatus.- Physics and Chemistry of Minerals, vol. 33, n°6, p. 394, 2006

Texier M., Regula G., Lancin M., Pichaud B.- LACBED study of extended defects in 4H-SiC.- Philosophical Magazine Letters, vol. 86, n° 9, p. 529, 2006

Thomas O., A. Loubens, P. Gergaud, Labat S.- X-ray scattering: a powerful probe of lattice strains in materials with small dimensions.- Applied Surface Science, vol. 253, p. 182, 2006

Toulemonde P., A. San Miguel, A. Merlen, R. Viennois, S. Lefloch, C. Adessi, X. Blase, J.L. Tholence.- High pressure synthesis and properties of intercalated silicon clathrates.-  Journal of Physics and Chemistry of Solids, vol. 67, n° 5-6, p. 1117-1121, 2006

Volkos S.N., E. S. Efthymiou, S. Bernardini, I. D. Hawkins, A. R. Peaker, and G. Petkos.- The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors.- Journal of Applied Physics, vol. 100, n° 12, 2006

Weiss C., Bergeon N., Mangelinck-Noël N., Billia B.- Effects of the interface curvature and dendrite orientation in directional solidification of bulk transparent alloys.- Materials Science Forum, vol. 508, p. 337-, 2006

Zahra A.M., Zahra C.Y., Verlinden B.- Comment on the room temperature precipitation in quenched Al-Cu-Mg alloys : a model fort he reaction kinetics and yield-strength development.- Phil. Mag. Letters, vol. 86, p. 235-42, 2006

Zaïdat K., Ouled-Khachroum T., Reinhart G., Mangelinck-Noël N., Dupouy M.D., Moreau R.- Effect of travelling magnetic field on the directional solidification of refined Al-3.5 wt %Ni alloys.- Materials Science Forum, vol. 508, p. 221-226, 2006

Zarbout K., Moya G., Bernardini J., Moya-Siesse D., Si Ahmed A., Kansy J., Goeuriot D.- Consequences of silicon segregation on the dielectric properties of sintered alumina.- Defect and Diffusion Forum, vol. 249, p. 281-286, 2006

Zerweck U., Loppacher Ch.,Eng L.M.- Ordered growth and local workfunction measurements of tris(8-hydroxyquinoline) aluminum on ultrathin KBr films.- Nanotechnology, vol. 17, p. S107, 2006

2007

Adrian J; Rodriguez, N; Essely, F, Haller G, Grosjean C, Portavoce A, Girardeaux C.- Investigation of a new method for dopant characterization.- Microelectronics Reliability,  vol. 47, n° 9-11, p. 1599-1603, 2007

Ahoussou A.P., Rogez J., Kone A.- Solution calorimetric study of mixing enthalpy in 0.8[xB2O3-(1-x)SiO2]-0.2K2O glasses at 298 K.- Materials Research Bulletin, vol. 42, p. 1577-1581, 2007

Ahoussou A.P., Rogez J., Kone A.- Thermodynamical miscibility in 0.8[xB2O3-(1-x)P2O5]-0.2K2O glasses.- Journal of Non Crystalline Solids, vol. 353, p. 271-275, 2007

Amsalem P., Giovanelli L., Themlin J.M., Koudia M., M. Abel M., Oison V., Ksari Y., Mossoyan M., Porte L.- Interface formation and growth of a thin film of ZnPcCl8/Ag(111) studied by photoelectron spectroscopy.- Surface Science, vol. 601, p. 4185, 2007

Aqua J.-N., Frisch T. , Verga A.- Nonlinear evolution of a morphological instability in a strained epitaxial film.- Physical Review B.- vol. 76, p. 165319, 2007

Arab M., F. Picaud, Ch. Ramseyer, R. M. Babaa, F. Valsaque and E. McRae.- Characterization of single wall carbon nanotubes structure by means of rare gas adsorption.- Journal of Chemical Physics, vol.121. p. 1, 2007

Autran J.L. and Munteanu D.- Au-delà du transistor MOS sur silicium massif : Nouveaux matériaux, architectures innovantes et dispositifs ultimes.- Revue d'Electricité et de l'Electronique, n° 4, p. 25-37, 2007

Autran J.L., Roche P., Borel J., Sudre C., Castellani-Coulié K., Munteanu D., Parrassin T.,  Gasiot G., Schoellkopf J.P.- Altitude SEE Test European Platform (ASTEP): project overview, first results in CMOS 130 nm and perspectives.- IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 1002-1009, 2007

Ayoub J.-P., Favre L., Berbezier I., Ronda A., Morresi L., Pinto N.- Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films.- Applied Physics Letters, vol. 91 , n° 14, p. 141920, 2007

Barbara B., Bertaina S., Gambarelli S., Giraud R., Stepanov A., Malkin B., Tkachuk A.- Environmental effects on quantum relaxation and coherent dynamics in rare-earths ions.- Journal of Magnetism and Magnetic Materials.- vol. 310, n° 2, p.1462, 2007

Barral V., Poiroux T., Vinet M., Widiez J., Previtali B., Grosgeorges P., Le Carval G., Barraud S., Autran J.L., Munteanu D., Deleonibus S.- Experimental determination of the channel backscattering coefficient on 10 to 70 nm- metal-gate double-gate transistors.- Solid State Electronics, vol. 51, n° 4, p. 537–542, 2007

Barthélemy H., Fillaud  M., Bourdel S., Gaubert J.- CMOS inverters based positive type second generation current conveyor.- Analog Integrated Circuits and Signal Processing, vol. 50, n° 2, p. 141-146, 2007

Belin T., Millot N., Bovet N., Gailhanou M.- In situ and time resolved study of the gamma/alpha-Fe2O3 transition in nanometric particles.- Journal of Solid State Chemistry, vol 180, n° 8, p 2377-2385, 2007

Bendahan M., J. Guérin, R. Boulmani, K. Aguir.- WO3 sensor response according to operating temperature: Experiment and modeling.- Sensors and Actuators B: Chemical, vol. 124, n° 1, p. 24-29, 2007

Benoudia M.C., Roussel J.M., Labat S., Thomas O., Beke D.L., Langer G., Kis-Varga M.- Investigating interdiffusion in Mo/V multilayers from x-ray scattering and kinetic simulations.- Defect and Diffusion Data, vol. 264, p. 13, 2007

Berbezier I. , Ronda A.- Self-assembling of Ge dots on nanopatterns : experimental investigation of their formation, evolution and control.- Physical Review B, vol. 75, p. 195407, 2007

Bergeret E., Gaubert J., Pannier Ph., Gaultier J. M.- Modeling and design of CMOS UHF voltage multiplier for RFID in a EEPROM compatible process.- IEEE Transactions on Circuits and Systems-II, vol. 54, n° 10, p. 833-837, 2007

Bernardini S., M. Ishii, E. Whittaker, B. Hamilton, J. W. Freeland, N. R. J. Poolton, S. De Gendt.- Nanoscale imaging and X-ray spectroscopy of electrically active defects in ultra thin dielectrics on silicon.- Microelectronic Engineering, vol. 84, n° 9-10, p. 2286-2289, 2007

Bertaina S., Gambarelli S., Tkachuk A., Kurkin I.N., Malkin B., Stepanov A., and Barbara B.- Rare-earth solid-state qubits.- Nature Nanotechnology, vol. 2, p. 39, 2007

Bescond M., Cavassilas N., Lannoo M.- Effective-mass approach for n-type semiconductor Nanowire MOSFETs arbitrarily oriented.- Nanotechnology, vol. 18, p. 255201, 2007

Bescond M., Cavassilas N., Nehari K., Lannoo M.- Tight-binding calculations of Ge-nanowire bandstructures.- Journal of Computational Electronics, vol. 6, p. 341, 2007

Billia B., Gastaldi J., Nguyen-Thi H., Schenk T., Reinhart G., Mangelinck N., Grushko B., Klein H., Härtwig J., Baruchel J.- Growth structures, interface dynamics and stresses in metallic alloy solidification: in situ synchrotron X-ray characterisation.- Transactions of the Indian Institute of Metals, vol. 60, p. 287-291, 2007

Bocquet F., Bernier N., Saikaly W., Brosset C., Thibault J., Charaï A.- Evolution of ELNES spectra as function of experimental settings for any uniaxial specimen : a fully relativistic study.- Ultramicroscopy, vol. 107, n° 1-2, p. 81-94, 2007

Boulmani R., M. Bendahan, C. Lambert-Mauriat, M. Gillet, K. Aguir.- Correlation between rf-sputtering parameters and WO3 sensor response towards ozone.- Sensors and Actuators B: Chemical, vol. 125, n° p. 622-627, 2007

Bourdel S., Bachelet Y., Gaubert J., Battista M., Egels M., Dehaese N.- Low cost CMOS pulse generator for UWB systems.- Electronics Letters, vol. 43, n° 25, p. 1425-1427, 2007

Buffet A., Reinhart G., Schenk T., Nguyen-Thi H., Gastaldi J., Mangelinck-Noël N., Jung H., Härtwig J., Baruchel J., Billia B.- Real-time and in situ solidification of Al-based alloys investigated by synchrotron radiation: a unique experimental set-up combining radiography and topography techniques.- Physica Status Solidi A, vol. 204, p. 2721, 2007

Chaillan F., Fraschini C., Courmontagne Ph.- Speckle noise reduction in SAS imagery.- Signal Processing, vol. 87, n° 4, p. 762-781, 2007

Chen Z., Moore J., Radtke G., Sirringhaus H., O’Brien S.- Binary nanoparticle superlattices in the semiconductor-semiconductor system : CdTe and CdSe.- Journal of the American Chemical Society, vol. 129, n° 50, p.15702-15709, 2007

Chmielowski R., Madigou V., Ferrandis P., Zalecki R., Blicharski M., Leroux C.- Ferroelectric Bi3.25La0.75Ti3O12 thin films on a conductive Sr4Ru2O9 electrode obtained by pulsed laser deposition.- Thin Solid Films, vol. 515, p. 6314-6318, 2007

Clair S., Rabot C., Kim Y., Kawai M.- Adsorption mechanism of aligned single wall carbon nanotubes at well defined metal surfaces.- Journal of Vacuum Science and Technology B, vol. 25, p.1143, 2007

Cojocaru-Mirédin O., Mangelinck D., Hoummada K., Cadel E., Blavette D., Deconihout B., et Perrin-Pellegrino C.- Snowplow effect and reactive diffusion in the Pt doped Ni–Si system.- Scripta Materialia, vol 57, 5, p. 373-376, 2007

Contaret T., T. Boutchacha, G. Ghibaudo, F. Bœuf, T. Skotnicki.- Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides.- Solid-State Electronics, vol. 51, n° 4, p. 633-637, 2007

Creyssels M., Dorbolo S., Merlen A., Laroche C., Castaing B., Falcon E.- Some aspects of electrical conduction in granular systems of various dimensions.- European Physical Journal E, vol. 23, p. 255–264, 2007

Daré A.-M., Raymond L., Albinet G., Tremblay A.-M. S.- Interaction-induced adiabatic cooling for antiferromagnetism in optical lattices.- Physical Review B, vol.76, n° 6, p. 064402, 2007

De Jouvancourt H., Record M.C, Marin-Ayral R.M.- The effects of platinum concentration on the combustion synthesis of NiAl. Application in repairing Ni-based super-alloys.- Materials Science and Technology, vol. 23, n°5, p. 593-599, 2007

De Padova P., Ayoub J.P., Berbezier I., Mariot JM., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Testa A.M., Fiorani D., Olivieri B., Picozzi S., Hricovini K.- MnxGe1-x thin layers studied by TEM, X-ray absorption spectroscopy and SQUID magnetometry.- Surface Science, vol. 601, p. 2628, 2007

De Padova P., Favre L., Berbezier I., Olivieri B., Generosi A., Paci B., Rossi Albertini V., Perfetti P., Quaresima C., Mariot J.-M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., D’Orazio F., Lucari F. and Hricovini K.- Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductors.- Surface Science, vol. 601, n° 18 , p. 4370 – 4374, 2007

Delamare R., M. Gillet, E. Gillet, P. Guaino.- Structure and electrical properties of tungsten oxide nanorods epitaxially organized on a mica substrate.- Surface Science, vol. 601, n° 13, p. 2675-2679, 2007

Dolocan V. O., Dolocan A., Dolocan V.- A Quantum Mechanical Treatment of the Vortex - Vortex Interaction in Anisotropic Super-conductors.- Journal of Superconductivity and Novel Magnetism, vol. 20, p. 215, 2007

Dorbolo S., Merlen A., Creyssels M., Vandewalle N., Castaing B., Falcon E.- Effects of electromagnetic waves on the electrical properties of contacts between grains.- Europhysics Letters, vol. 79, p. 54001, 2007

Dubois S, Palais O, Ribeyron PJ, Enjalbert N, Pasquinelli M, Martinuzzi S.- Effect of intentional bulk contamination with iron on multicrystalline silicon solar cell properties.- Journal of Applied Physics, vol. 102, p. 083525, 2007

Dufay M., Debierre J. M. Frisch T.- Electromigration-induced step meandering on vicinal surfaces: Nonlinear evolution equation.- Physical Review B, vol. 75, p 045413-1-10 , 2007

Dufay M., Frisch T. Debierre J. M.- Role of step-flow advection during electromigration-induced step bunching.- Physical Review B, vol. 75, p 241304(R)-1-4 , 2007

Eberlein M., Escoubas S., Gailhanou M., Thomas O.,Micha J.-S., Rohr P., Coppard R.- Investigation by high-resolution X-ray diffraction of the local strains induced in Si by periodic arrays of oxide filled trenches.- Physica Status Solidi (a), vol. 8, p. 2542-2547, 2007

Efthymiou E., S. Bernardini, S. N. Volkos, B. Hamilton, J. F. Zhang, H. J.Uppal, A. R. Peaker.- Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks.- Microelectronic Engineering, vol. 84, n°  9-10, p. 2290-2293, 2007

Ernst S., S. Wirth, M. Rams, V. Dolocan, Steglich F.- Tip preparation for Scanning Tunnelling Microscopy under ultra-low temperature and UHVconditions.- Science and Technology of Advanced Materials, vol. 8, p. 347, 2007

Feuerbacher M., Thomas C., Makongo J.P.A., Hoffmann S., Carrillo-Cabrera W., Cardoso R., Grin Y., Kreiner G., Joubert J-M., Schenk T., Gastaldi J., Nguyen-Thi H., Mangelinck-Noël N., Billia B., Donnadieu P., Czyrska-Filemonowicz A., Zielinska-Lipiec A., Dubiel B., Weber T., Schaub P., Krauss G., Gramlich V., J. Christensen J., Lidin S., Fredrickson D., Mihalkovic M., Sikora W., Malinowski J., Bruehne S., Proffen T., Assmus W., De Boissieu M., Bley F., Cheminv J-L., Schreuer J., Steurer W.- The Samson phase, b-Mg2Al3, revisited.- Zeitschrift für Kristallographie, vol. 222, p. 259–288, 2007

Frisch T., . Verga A.- Nonlinear evolution of the step meandering instability of a growing crystal surface.- Physica D, vol. 235, p. 15, 2007

Gacem K., El Hdiy A., Troyon M., Berbezier I., Szkutnik P.D., Karmous A., Ronda A.- Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide.- Journal of Applied Physics, vol. 102, p. 093704, 2007

Gailhanou H., Van Miltenburg, Rogez J., Olives J., Amouric M., Gaucher E.C., Blanc P.- Thermodynamic properties of anhydrous smectite MX-80, illite Imt-2 and mixed layer illitesmectite ISCz-1 as determined by calorimetric methods. Part I : Heat capacities, heat contents and entropies.- Geochimica et Cosmochimica Acta, p. 5463-5473, 2007

Gailhanou M., Loubens A., Micha J.-S., Charlet B., Minkevich A.A.,  Fortunier R., Thomas O.- Strain field in silicon on insulator lines using high resolution x-ray diffraction.- Applied Physics Letters, vol. 90, p. 111914, 2007

Gastaldi J., Billia B., Nguyen-Thi H., Schenk T., Reinhart G., Mangelinck N., Klein H., Härtwig J., Baruchel J.- In situ synchrotron X-ray imaging of the solidification progress in metallic alloys.- Transactions of the Indian Institute of Metals, vol. 60, p. 281-286, 2007

Gastaldi J., Reinhart G., Nguyen-Thi H., Mangelinck-Noël N., Billia B., Schenk T., Härtwig J., Grushko B., Klein H., Buffet A., Baruchel J., Jung H., Pino P., Przepiarzynski B.- In situ study of quasicrystal frowth by synchrotron X-ray imaging.- Philosophical Magazine, vol. 87, p. 3079-3087, 2007

Gemming S., Luschtinetz R., Alsheimer W., Seifert G., Loppacher Ch., Eng L.M.- Modelling ferroic functional element.- Journal of Computer-Aided Materials Design, vol. 14, p. 211, 2007

Gemming S., Luschtinetz R., Chapligyn I., Seifert G., Loppacher C., Eng L.M., Kunze T., Olbrich C.- Polymorphism in ferroic functional elements.- European Physical Journal Special Topics, vol. 140, p. 145, 2007

Gheribi A., Rogez J., Marinelli F., Mathieu J.C., Record M.C.- Introduction of pressure in binary phase diagram calculations. Application to the Ag-Cu system.- Calphad, vol. 31, p. 380-389, 2007

Gheribi A., Roussel J.M., Rogez J.- Phenomenological Hugoniot curves for transition metals up to 1 Tpa.- Journal of Physics : Condensed Matter, vol. 19, p. 476218-1726, 2007

Gillet E., Masek K., Lollman D., Gillet M.- Evolution of the oxidation states at the WO3 thin film surface during annealing in gases.- Vacuum, vol. 82, n ° 2, p. 261-265, 2007

Gillet M., R. Delamare, E. Gillet.- Growth, structure and electrical conduction of WO3 nanorods.- Applied Surface Science, vol. 254, n° 1, p. 270-273, 2007

Gillet M., Delamare  R., Gillet E.- Structure and electrical conduction of WO3 nanorods epitaxially grown on mica.- The European Physical Journal D, vol. 43, n° 1-3p.295-298, 2007

Giovanelli L., Vilmercati P., Castellarin-Cudia C., Themlin J-M., Porte L. Goldoni A.- Phase separation in potassium-doped ZnPc thin films.- Journal of Chemical Physics, vol. 126, p. 44709, 2007

Goguenheim D., Pic D., Ogier J.L.- Oxide reliability below 3nm for advanced CMOS : issues, characterization and solutions.- Microelectronics Reliability, vol. 47, p. 1373-1377, 2007

Guaino Ph., M. Gillet, R. Delamare, E. Gillet.- Modification of electrical properties of tungsten oxide nanorods using conductive atomic force microscopy.- Surface Science, vol. 601, n° 13, p. 2684-2687, 2007

Guérin C., Huard V., Bravaix A.- Hot-carrier damage from high to low voltage using the energy-driven framework.- Microelectronic Engineering, vol. 84, n° 9-10, p. 1938-1942, 2007

Guérin C., Huard V., Bravaix A.- The Energy Driven Hot-Carrier Degradation Modes in NMOSFETs.- IEEE Transactions on Device and Materials Reliability, vol. 7, n° 2, p. 225-235, 2007

Guigues F., Kussener E., Duval B., Barthélemy H.- Moderate inversion: highlights for low voltage design.- Computer Science (LNCS), vol. 4644, p. 413-422, 2007

Hardouin Duparc O., Couzinié J. P., Thibault-Pénisson J., Lartigue-Korinec S., Priester L.- Atomic structure of symmetrical and asymmetrical facets in a near S=9 (221) grain boundary in copper.- Acta Materiala, vol. 55, p. 1791-1800, 2007

Hassam S., Gheribi A.- Enthalpies of mixing of Au-Pb and Ag-Au-Pb alloys at 973 K.- Thermochimica acta, vol. 464, p. 1-6, 2007

Hendrich C., Favre L., Ievlev D. N., Dobrynin A. N., Bras W., Hörmann U., Piscopiello E., Van Tendeloo G., Lievens P., Temst K.- Measurement of the size of embedded metal clusters by mass spectrometry, transmission electron microscopy, and small-angle X-ray scattering.- Applied Physics A : Materials Science & Processing, vol. 86, n° 4, p. 533-538, 2007

Hoummada K., Mangelinck D., Cadel E., Perrin-Pellegrino C., Blavette D., et Deconihout B.- Formation of Ni silicide at room temperature studied by laser atom probe tomography.- Nucleation and Lateral Growth, Microelectronic Engineering,

Huard V., Parthasarathy C.R., Bravaix A., Hugel T., Guérin C., Vincent E.- Design-in reliability approach for NBTI and Hot-Carriers degradation in advanced nodes (invited paper).- IEEE Transactions on Device and Materials Reliability, vol. 7, n° 4, p. 558-570, 2007

Idrissi H., Regula G., Lancin M., Pichaud B.- 30° Si(g) partial dislocation mobility in 4H-SiC doped with Nitrogen.- Journal of Applied Physics, vol. 101, n° 11, p. 113533.1-113533.5, 2007

Japaridze G. I., Hayn R., Lombardo P., Müller-Hartmann E.- Band-insulator–metal–Mott-insulator transition in the half-filled t-t′ ionic Hubbard chain.- Physical Review B, vol. 75, n° 24, p. 245122, 2007

Jauffret C.- Observability and Fisher information matrix in nonlinear regression.- IEEE Transactions on Aerospace and Electronic Systems,  vol 43, n° 2, p. 421-437, 2007

Jenanne A.,  Sassi O., Sayouti E. H., Aride J., Bernardini J., Moya G.- Magnetic susceptibility isochronal study in quenched Ni2Si intermetallic compound.- Physical and Chemical News, vol. 36, p.127-130, 2007

Karmous A., Berbezier I. , Ronda A., Hull R., Graham J.- Ordering of Ge nanocrystals using FIB nanolithography.- Surface Science, vol. 601, p. 2769, 2007

Khachane M., Nowakowski P., Villain S., Gavarri J.R., Muller Ch., Elaatmani M., Outzourhite A., Luk'yanchuk I., Zegzouti A., Daoud M.- Catalytic behaviors of ruthenium dioxide films deposited on ferroelectrics substrates, by spin coating process.- Applied Surface Science, vol. 254, n° 5, p. 1399-1404, 2007

Klappenberger F., Cañas-Ventura M. E., Clair S., Pons S., Schlickum U., Qu Z.-R., Brune H., Kern K. , Strunskus T. , Wöll C., Comisso A., DeVita A., Ruben M., Barth J. V.- Conformational adaptation in supramolecular assembly on surfaces: Hydrogen-bonded chains of oxalic amide derivatives on Au(111).- ChemPhysChem, vol. 8, p.1782, 2007

Labat S., Chamard V., Thomas O.- Local strain in a 3D nanocrystal revealed by 2D coherent X-ray diffraction imaging.- Thin Solid Films, vol.  515, p. 5557, 2007

Lachenal D., Bravaix A., Monsieur F., Rey-Tauriac Y.- Degradation mechanism understanding of NLDEMOS SOI in RF applications.- Microelectronics Reliability, vol. 47, n° 9-11, p. 1634-1638, 2007

Lachenal D., Monsieur F., Rey-Tauriac Y., Bravaix A.- HCI degradation model based on the diffusion equation including the MVHR model.- Microelectronic Engineering, vol. 84, n° 9-10, p. 1921-1924, 2007

Leclercq-Hugeux F., Coulet M.-V., Gaspard J.P., Pouget S., Zanotti J.M.- Neutrons probing the structure and the dynamics of liquids.- C. R. Physique, vol. 8, n° 7-8, p.884-908, 2007

Lefebvre W., Danoix F., Da Costa G., De Geuser F., Hallem H., Deschamps A., Dumont. M.- 3DAP measurements of Al content in different types of precipitates in aluminium alloys.- Surface and interface analysis, vol. 39, p. 206-212, 2007

Leifer K., Pelucchi E., Watanabe S., Michelini F., Dwir B., Kapon E.- Narrow (approximate to 4 meV) inhomogeneous broadening and its correlation with confinement potential of pyramidal quantum dot arrays.- Applied Physics Letters, vol. 91, n° 8, p. 081106, 2007

Leroux C., Lopez L., Firiti A., Ogier J.L., Lalande F., Laffont R., Micolau G.- A new method to quantify retention-failed cells of an EEPROM CAST.- Microelectronics Reliability, vol. 47, p. 1609-1613, 2007

Li J.B., Record M.C., Tedenac J.C.- A thermodynamic assessment of the Sb-Zn system.- Journal of Alloys and Compounds, vol. 438, p. 171-177, 2007

Lisoni J.G., Johnson J.A., Goux L., Paraschiv V., Maes D., Van der Meeren H., Willegems M., Haspeslagh L., Wouters D.J., Caputa C., Zambrano R., Turquat Ch., Muller Ch.- Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures.- Journal of Applied Physics, vol. 101, n° 1, p. 014908(1-7), 2007

Loppacher Ch., Zerweck U., Koehler D., Rodenstein M., Jaehne E., Luther R., Adler H.-J., Eng L.M.- Physical vapor deposition of alkyl phosphonic acid on mica and HOPG investigated by NC-AFM.- Nanotechnology, vol. 18, p. 084003, 2007

Loussier X., Munteanu D., Autran J.L.- Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits.- Journal of Non-Crystalline Solids, vol. 353, p. 639–644, 2007

Lozano-Gorrín A.D., Greedan J.E., Núñez P., González-Silgo C., Botton G.A., Radtke G.- Structural characterization, magnetic behavior and high-resolution EELS study of new perovskites Sr2Ru2−xCoxO6−δ (0.5<x<1.5).- Journal of Solid State Chemistry, vol. 180, n° 4, p.1209-1217, 2007

Makoudi Y., M. Arab, F. Palmino, E. Duverger, Ch. Ramseyer F. Cherioux, C. Joachim.- A stable room temperature molecular assembly of zwitterionic organic dipoles guided by a Si(111)7x7 template effect.- Angewandte Chemie International Edition, vol. 46, p. 9287-9290, 2007 – Angew Chem, vol. 119, p. 9447, 2007

Mangeat T., Escoubas L., Flory F., Roussel L., De Micheli M., Coudray P.- Integrated polarization rotator made of periodic asymmetric buried Ta2O5 / silica sol-gel waveguides.- Optics Express, vol. 15, n° 19, p. 12436 – 12442, 2007

Mangelinck-Noël N., Duffar T.- Planar front-equiaxed growth transition in semiconductor solidification: application to photovoltaic silicon.- Transactions of the Indian Institute of Metals, vol. 60, p. 93-97, 2007

Martinez A., Bescond M., A., Barker J.R., Svizhenkov A., Anantram A., Millar C., Asenov A.- Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET.- IEEE Transactions on Electron Devices, vol. 54, p. 2213-2222, 2007

Martinuzzi S., Gauthier M., Barakel D., Perichaud I., Le Quang N., Palais O., Goaer G.- Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell properties.- European Physical Journal : Applied Physics, vol. 40, p. 83-88, 2007

Martinuzzi S., Perichaud I., Palais O.- Segregation phenomena in large-size cast multicrystalline Si ingots.- Solar Energy Materials and Solar Cells, vol.  91, p. 1172, 2007

Minkevich A.A.,  Gailhanou M., Micha J.-S.,  Charlet B., Chamard V., Thomas O.- Inversion of the diffraction pattern from an inhomogeneously strained crystal using an iterative algorithm.- Physical Review B, vol 76, p104106, 2007

Moliton A., Ratier B., Simon J.J.,  Monestier F.- Cellules solaires organiques : intérêt, principe de fonctionnement et modélisations.- Revue de l’Electricité et de l’Electronique, n° 8, 2007

Monestier F., Pandey A.K., Simon J.J, Torchio Ph., Escoubas, Nunzi J.M.- Optical modeling of the ultimate efficiency of pentacene: N, N_-ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide–blend solar cells.- Journal of Applied Physics, vol. 102, p. 034512-1-034512-6, 2007

Monestier F., Simon J.J., Torchio Ph., Escoubas L., Flory F., Bailly S., De Bettignies R., Guillerez S., Defranoux C.- Modeling the short-circuit current density of polymer solar cells based on P3HT:PCBM blend.- Solar Energy Materials and Solar Cells, vol. 91, p. 405-410, 2007

Monestier F., Torchio Ph., Simon J.J., Escoubas L., Cathelinaud M.- Software for automatic optimization of the electromagnetic field in organic solar cells.- Nonlinear Optics and Quantum Optics, vol.  37, p. 159–168, 2007

Morard G., Mezouar M., Rey N., Poloni R., Merlen A., Le Floch S., Toulemonde P., Pascarelli S., San-Miguel A., Sanloup C., Fiquet G.- Optimization of Paris–Edinburgh press cell assemblies for in situ monochromatic X-ray diffraction and X-ray absorption.- High Pressure Research, vol. 27, n° 2 , 223–233, 2007

Morresi L., Ayoub J.P., Pinto N., Ficcadenti M., Murri R., Ronda A., Berbezier I., D'Orazio F., Lucari F.- Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C.- Surface Science, vol. 601, p. 2632, 2007

Moskovkin P., Pisov S., Hou M., Raufast C., Tournus F., Favre L., Dupuis V.- Model predictions and experimental characterization of Co-Pt alloy clusters.- The European Physical Journal D : Atomic, Molecular, Optical and Plasma Physics, vol. 43, n° 1-3, p. 27-32, 2007

Mouhoubi S., Yao T., Lalande F., Canet P.- Thermal behavior of floating gate oxide defects (moving bits).- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 615-619, 2007

Munteanu D., Autran J-L., Ferlet-Cavrois V., Paillet P., Baggio J., Castellani-Coulié K.- 3D quantum numerical simulation of single-event transient in multiple-gate nanowire MOSFETs.- IEEE Transactions on Nuclear Science, vol. 54, n° 4, p. 994-1001, 2007

Munteanu D., J.L. Autran, X. Loussier, S. Harrison, R. Cerutti.- Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects.- Molecular Simulation, vol. 33, n° 7, p. 605-611, 2007

Nassiopoulou A.G., Olzierski A., Tsoi E., Berbezier I., Karmous A.- Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.- Journal of Nanosciences and Nanotechnology, vol. 7, p. 316, 2007

Nehari K., Cavassilas N., Michelini F., Bescond M., Autran JL., Lannoo M.- Full-band study of current across silicon nanowire transistors.- Applied Physics Letters, vol. 90, p. 132112, 2007

Nemouchi F., V. Carron, J. L. Lábár, M. Putero, L. Ehouarne, B. Arrazat, Y. Morand, S. Descombes, J. P. Barnes, D. Mangelinck, Y. Campidelli and O. Kermarrec.- Dopant Effect On NiGe texture during Nickel Germanide growth.- ECS Transactions, vol 6, p. 49-59, 2007

Ngo K.A., P. Lauque, K. Aguir.- High performance of a gas identification system using sensor array and temperature modulation.- Sensors and Actuators B: Chemical, vol. 124, n° 1, p. 209-216, 2007

Nguyen-Thi H., Reinhart G., Mangelinck-Noël N., Jung H., Billia B., Schenk T., Gastaldi J., Härtwig J., Baruchel J.- In situ and real-time investigation of columnar-to-equiaxed transition in metallic alloy.- Metallurgical and Materials Transactions A, vol. 38, p. 1458-1464, 2007

Niepce J.C. and GFA members.- Main recent contributions to SHS from France.- International Journal of SHS, vol. 16, n°4, p. 235-255, 2007

Obreschkow D., Michelini F., Dalessi S., Kapon E., Dupertuis M.-A.- Nonorthogonal theory of polarons and application to pyramidal quantum dots.- Physical Review B, vol. 76, n° 3, p. 035329, 2007

Oison V.- First-principle study of the hydrogen onds in a thin film of phthalocyanine molecules.- Surface Science, vol. 601, p. 1040-1047, 2007

Oison V., Koudia M., Abel M., Porte L.- Influence of stress on hydrogen-bond formation in a halogenated phthalocyanine network.- Physical Review B, vol. 75, p. 035428, 2007

Oppeneer P.M., Elgazzar S., Shick A.B., Opahle I., Rusz J., Hayn R.- Fermi surface changes due to localized-delocalized f-state transitions in Ce-115 and Pu-115 compounds.- Journal of Magnetism and Magnetic Materials, vol. 310, p. 1684-1690, 2007

Palmino F., Duverger E., Labrune J.-C., Mossoyan M., Themlin J.-M.- Molecular self-alignment on pre-structured Sm/Si(111) interfaces at room temperature.- Surface Science, vol. 601, p. 2588, 2007

Parthasarathy C.R., Bravaix A., Guérin C., Denais M., Huard V.- Design-in Reliability for 90-65nm CMOS nodes submitted to hot-carriers and NBTI degradation.- Lecture Notes in Computer Science (LNCS), vol. 46, p. 191-200, 2007

Parthasarathy C.R., Denais M., Huard V., Ribes G., Vincent E., Bravaix A.- New insights into recovery characteristics during PMOS NBTI and CHC degradation.- IEEE Transactions on Device and Materials Reliability, vol. 7, n° 1, p. 130-137, 2007

Perrin C., Nemouchi F., Clugnet G., et Mangelinck D.- Anisotropy of the thermal expansion of the Ni(Si[sub 1 - x]Ge[sub x]) phases investigated by high-temperature x-ray diffraction.- Journal of Applied Physics, vol 101, 7, p. 073512, 2007

Pic D., Ogier J.L., Goguenheim D.- A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories.- Microelectronics Reliability, vol. 47, p. 1322-1329, 2007

Portavoce A, Simola R., Mangelinck D., Bernardini J., P.fornara P.- Dopant diffusion during amorphous Silicon crystallisation.- Diffusion and Defect Data, vol 264,33-38, 2007

Portavoce A., Hull R., Reuter M.C., Ross F.M.- Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation.- Physical Review B, vol. 76, p. 235301-, 2007

Postel-Pellerin J., Lalande F., Canet P., Boutahar S., Bouchakour R., Pizzuto O., Regnier A.- Impact of stress on Fowler-Nordheim parameters effects on EEPROM threshold voltage.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 610-614, 2007

Rabot C., Clair S., Kim Y., Kawai M.- Scanning tunneling microscopy observations of benzoic acid molecules coadsorbed with single-walled carbon nanotubes on Au(111).- Japanese Journal of Applied Physics, vol. 46, p.5572, 2007

Rasmussen S.B., Huang J., Riisager A., Hamma H., Rogez J., Winnick J., Wasserscheid P., Fehrmann R.- Flue gas cleaning with alternative processes and reaction media.- Electrochemical Society Transaction, p. 3-35, 2007

Record M.C, De Jouvancourt H., Marin-Ayral R.M.- Elaboration of platinum-modified NiAl coatings by combustion synthesis : simultaneous repairing and coating of Ni-based superalloys.- International Journal of SHS, vol. 16, n°4, p. 199-206, 2007

Regnier A., Portal J.M., Bouchakour R.- NMOS electrical model for halo implant study.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 620-624, 2007

Regnier A., Saillet B., Portal J.M., Bouchakour R.- CHE and CHISEL characterization procedure for compact Flash cell model.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 625-629, 2007

Rogdakis K., Bescond M., Bano E., Zekentes K.- Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes.- Nanotechnology, vol. 18, p. 475715, 2007

Rohart S., Raufast C., Favre L., Bernstein E., Bonet E., Wernsdorfer W., Dupuis V.- Interface effect on the magnetic anisotropy of CoPt clusters.- Journal of Magnetism and Magnetic Materials, vol. 316, p. e355 - e359, 2007

Rufino B., Boulc'h F., Coulet M.-V., Lacroix G., Denoyel R.- Influence of particles size on thermal properties of aluminium powder.- Acta Materiala, vol. 55, n° 8, p. 2815−2827, 2007

Saitzek S., F. Guinneton, L. Sauques, K. Aguir, J.R. Gavarri .- Thermochromic CeO2–VO2 bilayers: Role of ceria coating in optical switching properties.- Optical Materials, .- vol. 30, n° 3, p. 407-415, 2007

Saitzek S., S. Villain, G. Nolibé, J.R. Gavarri.- Electrical behaviour of catalytic nanostructured CeO2/CuOx composites under air–methane gas impulses.- Applied Surface Science, vol. 253, n° 18, p. 7490-7496, 2007

Salomon E., Papageorgiou N., Angot T., Verdini A., Cossaro A., Floreano L., Morgante A., Giovanelli L., Le Lay G.- Lead-phthalocyanine films by near edge X-ray absorption fine structure spectroscopy.- Journal of Physical Chemistry C, vol. 111, p. 12467, 2007

Sati P., Deparis C., Morhain C., Schäfer S., and Stepanov A.- Antiferromagnetic Interactions in single crystalline Zn1−xCoxO thin films.- Physical Review Letters, vol. 98, p.137204, 2007

Sati P., Schäfer S., Morhain C., Deparis C., and  Stepanov A.- Magnetic properties of single crystalline Zn1−xCoxO thin films.- Superlattices and Microstructures, vol. 42, p.191, 2007.

Sati P., Stepanov A. and  Pashchenko V.- Exchange broadening of EPR line in ZnO:Co.- Low Temperature Physics, vol. 33, p.927,  2007

Scarselli M., Masala S., Castrucci P., De Crescenzi M., Gatto E., Venanzi M., Karmous A., Szkutnik P.D., Ronda A., Berbezier I.- Optoelectronic properties in quantum-confined germanium dots.- Applied Physics Letters, vol. 91, p. 141117, 2007

Serdouk S., Hayn R. , Autran J.-L.- Theory of spin dependent tunnelling current in ferromagnetic metal-oxide-silicon structures.- Journal of Applied Physics, vol. 102, p. 113707, 2007

Socol G., Axente E., Ristoscu C., Sima F., Popescu A., Stefan N., Mihailescu I.N., Escoubas L., Ferreira J., Bakalova S., Szekeres A.- Enhanced gas sensing of Au nanocluster –doped or –coated zinc oxide thin films.- Journal of Applied Physics, vol. 102, p. 083103, 2007

Steuwer A., Dumont M., Peel M., Preuss M., Withers P.J.- The variation of the unstrained lattice parameter in an AA7010 friction stir weld.- Acta Materialia, vol. 55, n° 12, p. 4111-4120, 2007

Szkutnik P.D. , Sgarlata A., Motta N., Placidi E., Berbezier I., Balzarotti A.- Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces.- Surface Science, vol. 601, p. 2778, 2007

Szkutnik P.D., Sgarlata A., Balzarotti A., Motta N., Ronda A.,  Berbezier I.- Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110].- Physical Review B, vol. 75, p. 033305, 2007

Texier M., Joulain A., Bonneville J., Thilly L., Rabier J.- Al-Pd-Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain.- Philosophical Magazine, vol. 87, n° 10, p. 1497, 2007

Tlili A., A. Abdelghani, K. Aguir, M. Gillet, N. Jaffrezic-Renault.- Adsorption characteristics of self-assembled thiol and dithiol layer on gold.- Materials Science and Engineering: C, vol. 27, n° 4, p. 620-624, 2007

Vallejos S., V. Khatko, K. Aguir, K.A. Ngo, J. Calderer, I. Gràcia, C. Cané, E. Llobet, X. Correig.- Ozone monitoring by micro-machined sensors with WO3 sensing films.- Sensors and Actuators B: Chemical, vol. 126, n° 2, p. 573-578, 2007

Viennois R., Record, M.C., Izard V., Tedenac J.C.- Raman scattering study of the lattice dynamics of -Zn4-xCdxSb3.- Journal of Alloys and Compounds, vol. 440, p. L22-25, 2007

Volkos S. N., S. Bernardini, N. Rigopoulos, E. S. Efthymiou, I. D. Hawkins, B. Hamilton, L. Dobaczewski, S. Hall, P. K. Hurley, A. Delabie, A. R. Peaker.- Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate.- Microelectronic Engineering, vol. 84, n°  9-10, p. 2374-2377, 2007

Yao H. B, Bouville M, Chi D Z, Sun H P, Pan X Q, Srolovitz D J, Mangelinck D.- Interplay between grain boundary grooving, stress, and dealloying in the agglomeration of NiSi1-xGex films.- Electrochemical and Solid State Letters, vol. 10, p. H53-H55, 2007

Zahi Y., Laffont R., Lalande F., Boutahar S., Bouchakour R.- Tunneling injection temperature dependence in EEPROM cell.- Journal of Non-Crystalline Solids, vol. 353, n° 5-7, p. 648-652, 2007

Zaïdat K., Mangelinck-Noël N., Moreau R.- Control of melt convection by a travelling magnetic field during the directional solidification of Al–Ni alloys.- Comptes Rendus Mécanique, vol. 335, p. 330-335, 2007

Zerweck U., Loppacher Ch., Otto T., Grafström S., Eng L.M.- Kelvin probe force microscopy of C60 on metal substrates: towards molecular resolution.- Nanotechnology, vol. 18, p. 084006, 2007

2008

Abel M., Oison V., Koudia M., Porte L.- Conformation change of tetrahydroxyquinone deposited on Ag(111).- Physical Review B, vol. 77, p. 085410, 2008

Ahoussou A.P., Kouyate A., Diabate D., Rogez J., Kone A.- Influence of alkali mixed effect on the mixing enthalpy in 0.75B2O3–0.25[xNa2O–(1 − x)K2O] glass system.- Chinese Chemical Letters, vol. 19, n° 10, p. 1252-1255, 2008

Alexandre L, Rousseau K., Alfonso C., Saikaly W., Fares L., Grosjean C., Charaï A.- Optimized Focused Ion Beam silicon samples suitable for lattice parameter measurements by Convergent Beam Electron Diffraction.- Micron, vol. 39, p. 394, 2008 - http://dx.doi.org/10.1016/j.micron.2007.01.005

Aqua  J-N.,    Frisch T.- Elastic interactions and kinetics during reversible submonolayer growth: Monte Carlo simulations.- Physical Review B, vol. 78, p. 121305,  2008

Autran J.L. and Munteanu D.- Simulation of electron transport in nanoscale independent-gate double-gate devices using a full 2D Green’s function approach.- Journal of Computational and Theoretical Nanoscience, vol. 5, p. 1120–1127, 2008 - http://dx.doi.org/10.1166/jctn.2008.010

Aziza H., Bergeret E., Portal J.M., Ginez O.- A novel low power-oriented design methodology for analog blocks.- Journal of Low Power Electronics, vol. 4, n° 1, p. 60-67, 2008 - http://dx.doi.org/10.1166/jolpe.2008.151

Aziza H., Delsuc B.- Device and memory array models for Flash EEPROM technology.- WSEAS Transactions on Circuits and Systems, vol. 7, n° 4, p. 249-258, 2008

Bakiz B., F. Guinneton, J.P. Dallas, S. Villain, J.R. Gavarri.- From cerium oxycarbonate to nanostructured ceria: Relations between synthesis, thermal process and morphologies.- Journal of Crystal Growth, vol. 310, n° 12, p.  3055-3061, 2008

Bakiz B., Ouzaouit K., Benlhachemi A., Gavarri J-R., Villain S., Essoumhi A.,  Benyaich H.- Multiphase Lanthanum hydroxycarbonates and langasite ceramics for gas sensors.- Physical and Chemical News, n° 41, p. 55-60, 2008

Balogh Z., Erdelyi Z., Beke DL., Langer GA., Csik A., Boyen HG., Wiedwald U., Ziemann P., Portavoce A., Girardeaux C.- Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge.- Applied Physics Letters, vol. 92, n° 14, p. 143104, 2008 - http://dx.doi.org/10.1063/1.2908220

Barthélemy H., Meillère S., Gaubert J., Dehaese N., Bourdel S.  - OTA based on CMOS inverters and application in the design of tunable bandpass filter.- Analog Integrated Circuits and Signal Processing, p. 1573‐1979,  2008  - http://dx.doi.org/10.1007/s10470‐008‐9167‐8.

Battista M. , J. Gaubert, M. Egels, S. Bourdel, H. Barthélemy.  - 6-10 GHz Ultra Wide-Band CMOS LNA.- Electronics Letters, vol. 44, (5), pp. 343-344, 2008 - http://dx.doi.org/10.1049/el:20082982

Battista, M., Gaubert, J., Egels, M., Bourdel, S., Barthélemy, H.  - High-voltage-Gain CMOS LNA For 6–8.5-GHz UWB Receivers.- IEEE Transactions on Circuits and Systems II: Express Briefs,  - vol. 55,  n°8, pp. 713 – 717,  2008 - http://dx.doi.org/10.1109/TCSII.2008.922444

Belkacem W., A. Labidi, J. Guérin, N. Mliki, K. Aguir.- Cobalt nanograins effect on the ozone detection by WO3 sensors.- Sensors and Actuators B: Chemical, vol. 132, n° 1, p.  196-201, 2008

Benlhachemi A., K. Ouzaouit, H. Benyaich, S. Villain, J.R. Gavarri.- Catalytic behaviour of polycrystalline barium cerate in presence of air - methane mixtures.- Physical and Chemical News, vol. 41, 2008

Berche A., M.C. Record,  Rogez J.- Triangulation of the La-Zn-Mg system.- Archives of Metallurgy and Materials, vol.  53-4, 1141-1148, 2008 - http://www.imim.pl/files/archiwum/Vol4_2008/artykuly/21_.pdf

Bernardini S., M. MacKenzie, O. Buiu, P. Bailey, T.C.Q. Noakes, W.M. Davey, B. Hamilton and S. Hall.- Chemical and optical profiling of ultra thin high-k dielectrics on silicon.- Thin Solid Films, vol. 517, n° 1, 3, p.  459-461, 2008

Bernier N., Bocquet F., Allouch A., Saikaly W., Brosset C., Thibault J., Charai A.- A methodology to quantify the sp2 carbon fraction from K EELS edge spectra.- Journal of Electron Spectroscopy and Related Phenomena, vol. 164, n° 1-3, p. 34-43, 2008 - http://dx.doi.org/10.1016/j.elspec.2008.04.006

Bertaina S., Gambarelli S., Mitra T., Tsukerblat B., Müller A. et Barbara B.- Quantum oscillations in a molecular magnet.- Nature, vol. 453, p. 203-208, 2008 - http://dx.doi.org/10.1038/nature06962

Blum I., A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J. L. Lábár, V. Carron, and C. Perrin.-  Lattice and grain-boundary diffusion of As in Ni2Si.- Journal of Applied Physics, vol. 104, p. 114312, 2008 - http://dx.doi.org/10.1063/1.3035836

Boa D., Hassam S., Kra G., Kotchi K.P., Rogez J.- The ternary bismuth-iron-antimony system : Experimental phase diagram study and thermodynamic evaluation.- Calphad Computer Coupling of Phase Diagrams and Thermochemistry, vol. 32, p. 227-239, 2008 - http://dx.doi.org/10.1016/j.calphad.2008.01.001

Bocquet F., Nony N., Loppacher C., Glatzel T.- Analytical approach to the local contact potential  difference on (100) ionic surfaces : implications for Kelvin probe force microscopy.- Physical Review B, vol. 78, no 3, p 035410, 2008

Borivent D., Billia B., Paret J.- Anomalous growth of Ni3Si2 in bulk Ni/Si interdiffusion.- Journal of Applied Physics, vol. 104, p. 013523, 2008

Boucher Y.G., J. Le Rouzo, I. Ribet-Mohamed, R. Haïdar.- Modified form birefringence in periodic multilayer structures including uniaxial anisotropic materials.- Journal of Optical Society of America B, vol. 25, n°  5, p. 777-, 2008

Bouffaron R., Escoubas L., Simon J.J., Torchio Ph., Flory F., Berginc G., Masclet Ph.- Enhanced antireflecting properties of micro-structured top-flat pyramids.- Optics Express, 16 (23), 19304-19309, 2008

Bouffaron R., Escoubas L., Simon J-J., Torchio Ph., Flory F., Berginc G., Masclet Ph.- Enhanced antireflecting properties of micro-structured top-flat pyramids.- Optics Express, vol. 16, n° 23, p. 19304-19309, 2008

Boulaajoul K., Dallas J.P., Villain S., Musso J.A., Mesnaoui M., Sedki A.- The differentiation of hospital waste incineration ashes, an academic case : the Marrakech hospital.- International Scientific Journal for Alternative Energy and Ecology,  5, 61, 147-154, 2008

Buran C., Pala M.G., Bescond M., Mouis M.- Full-three dimensional quantum simulation approach for surface-roughness-limited mobility in SNWT.- Journal of Computational Electronics, vol. 7, p. 328, 2008

Burle N., Pichaud B., Vdovin V.I., Rzaev M.M.- Very first relaxation steps in low temperature buffer layers SiGe/Si heterostructures studied by x-ray topography.- Solid State Phenomena, vol. 131-133, p 77-82, 2008

Calmettes B., Nagarajan S., Gourdon A., Abel M., Porte L., Coratger R.- Bicomponent supramolecular packing using a controlled phthalocyanine network.- Angewandte Chemie International Edition, vol. 47, p.6994, 2008

Cayzac R., F. Boulc'h, M. Bendahan, M. Pasquinelli, P. Knauth.- Preparation and optical absorption of electrodeposited or sputtered, dense or porous nanocrystalline CuInS2 thin films.- Comptes Rendus Chimie, vol. 11, n° 9, p.  1016-1022, 2008

Chabchoub S., Rogez J., Saïd H.- Thermochemistry of the mixed calcium phosphate Ca8P2O7(PO4)4.- Thermochimica Acta, vol.  474, 8-11, 2008

Chabriel G., Barrere J., Thirion-Moreau N., Moreau E.- Algebraic joint zero-diagonalization and blind sources separation.- IEEE Transactions on Signal Processing, vol.56, Issue  3, p.980-989, 2008 - http://dx.doi.org/10.1109/TSP.2007.908934

Chamard V., Stangl J, Labat S, Mandl B, Lechner RT, Metzger TH.- Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction.- Journal of Applied Crystallography, vol. 41, p. 272-280, 2008 - http://dx.doi.org/10.1107/S0021889808001167

Chanier T., Opahle I., Sargolzaei M., Hayn R., Lannoo M.- Magnetic state around cation vacancies in II-VI semiconductors.- Physical Review Letters, vol. 100, p. 026405 , 2008

Charbouillot S., Pérez A., Fronte D.- A Programmable Hardware Cellular Automation: Example of Data Flow Transformation.- VLSI Design Journal, vol. 2008, n°1, article ID 160728, p.1-7, 2008 - http://dx.doi.org/10.1155/2008/160728

Chevallier V., Nihoul G., Madigou V.- Exfoliated nanoplatelets of an Aurivillius phase, Bi3.25La0.75Ti3O12: Characterisation by X-ray diffraction and by high-resolution electron microscopy.- Journal of Solid State Chemistry, vol. 18, p. 439-449, 2008

Chmielowska M., S.Villain, A. Kopia, J.P.Dallas,J.Kusinski J. R. Gavarri, Ch. Leroux.- Ce1-xNdxO2- /Si thin films obtained by pulsed laser deposition; microstructure and conduction properties.- Thin Solid Films, vol. 516, n° 12, p 3747-3754, 2008

Chmielowski R., V. Madigou, M. Blicharski, Ch. Leroux.- Sr4Ru2O9 films grown by pulsed laser deposition.- Journal of Crystal Growth, vol. 310, n° 16, p.  3854-3860, 2008

Clair S., Variola F., Kondratenko M., Jedrzejowski P., Nanci A., Rosei F., Perepichka D. F.- Self-assembled monolayer of alkanephosphoric acid on nanotextured Ti.- Journal of Chemical Physics, vol. 128, p. 144705, 2008

Courmontagne Ph.- Débruitage d’images SAS : utilisation conjointe d’un filtre moyenneur auto-adaptatif et du filtrage adapté stochastique.- Traitement du Signal, Numéro spécial: Caractérisation du Milieu Marin, vol. 25, n°1-2, p. 29-44, 2008

Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L.- Oxidation kinetics of Ni metallic film: formation of NiO-based resistive switching structures.- Thin Solid Films, vol. 516, n° 12, p. 4083-4092, 2008 - http://dx.doi.org/10.1016/j.tsf.2007.09.050

Craco L., Lombardo P., Hayn R., Japaridze G. I., Müller-Hartmann E.- Electronic phase transitions in the half-filled ionic Hubbard model.- Physical Review B, vol. 78, n° 7, p. 075121, 2008

Cubillo, J. R., Gaubert, J., Bourdel, S., Barthélemy, H.- RF Low-Pass Design Guiding Rules to Improve PCB to Die Transition Applied to Different Types of Low-Cost Packages.- IEEE Transactions on Advanced Packaging, vol. 31,  n° 3, pp. 527 – 535, 2008 - http://dx.doi.org/10.1109/TADVP.2008.924229

De Crescenzi M., Scarselli M., Sgarlata A., Masala S., Castrucci P., Gatto E., Venanzi M., Karmous A., Ronda A., Szkutnik P.D., Berbezier I.- Photocurrent generation from Ge nanodots in the near UV and visible region.- Superlattices and Microstructures, acceptée, 2009 - vol. 44, n° 4, p. 331-336, 2008

De Padova P., Ayoub JP, Berbezier I., Perfetti P., Quarissima C., Testa A.M., Fiorani D., Olivieri B., Mariot J.M., Taleb-Ibrahimi A., Richter M.C., Heckmann O., Hricovin K.- Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties - Physical Review B, vol. 77, p. 045203, 2008

Degoulange J., Perichaud I., Trassy C., Martinuzzi S.- Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock.- Solar Energy Materials and Solar Cells, vol. 92, p. 1269-1273, 2008

Deleruyelle D., Micolau G.- On the electrostatic behavior of floating nanoconductors .- Solid-State Electronics, vol. 52, n° 1, p. 17-24, 2008 - http://dx.doi.org/10.1016/j.sse.2007.07.008

Dienel T., Loppacher C., Mannsfeld S.C.B.,Forker R., Fritz T.- Growth-mode-induced narrowing of optical spectra of an organic adlayer.- Advanced Materials, vol. 20, p. 959, 2008

Dobaczewski L., S. Bernardini, P. Kruszewski, P.K. Hurley, V. P. Markevich., I.D. Hawkins, A.R. Peaker.- Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 RDI investigated by Laplace deep level transient spectroscopy.- Applied Physics Letters, vol. 92, n° 24, p. 242104-3, 2008

Duché, D., Escoubas, L. Simon, J.J.,  Torchio, P., Vervisch, W., Flory, F.- Slow Bloch-modes for enhancing the absorption of light in thin-films for photovoltaic cells.- Applied Physics Letters, vol. 92, p. 193310-1-193310-3, 2008 also selected for the Virtual Journal of Nanoscale Science & Technology, n° 2, 2008

Eberlein M., Escoubas S., Gailhanou M., Thomas O., Rohr P., Coppard R.- Influence of crystallographic orientation on local strains in silicon: a combined high-resolution X-ray diffraction and finite element modeling investigation.- Thin Solid Films, vol.516, p. 8042–8048, 2008 - http://dx.doi.org/10.1016/j.tsf.2008.04.061

Efthymiou E., S. Bernardini, J.F. Zhang, S.N. Volkos, B. Hamilton and A.R. Peaker.- Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment.- Thin Solid Films, vol. 517, n° 1, 3, p.  207-208, 2008

Egels M., J. Gaubert, P. Pannier, S. Bourdel.- A 52 GHz, 8.5 dB traveling wave amplifier in 0.13 µm standard CMOS process.- IEEE Trans. on Microwaves Theory and Techniques, vol. 56,  5 Part 2,  p. 1226 - 1233, 2008 - http://dx.doi.org/10.1109/TMTT.2008.920169

El Hdiy A., Gacem K., Troyon M., Ronda A., Bassani F., Berbezier I.- Germanium nanocrystal density and size effects on carrier storage and emission.- Journal of Applied Physics, vol. 104, p. 063716, 2008

Escoubas S., Brillet H., Mesarotti T., Raymond G., Thomas O., Morin P.- Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by High-Resolution X-Ray Diffraction.- Materials Science and Engineering B, vol. 154-155, p. 129-132, 2008 - http://dx.doi.org/10.1016/j.mseb.2008.08.016

Fu C.-C., Meslin E., Barbu A., Willaime F., Oison V.- Effect of C vacancy migration in a-iron.- Solid State Phenomena, vol. 139, p. 157, 2008

Gagou Y., Frémy M-A., Badèche T., Mezzane D., Choukri H. and Saint-Grégoire P.- Ionic conduction properties in PbK2 LiNb5 O15.- Ferroelectrics, vol 371, p 1-4, 2008

Gheribi A., Rogez J., Mathieu J.C.- Formulation of the integral Gibbs energy of crystalline elements versus temperature and mechanical stress.- Calphad Computer Coupling of Phase Diagrams and Thermochemistry, vol.  32, 315-319, 2008

Ghorayeb A. M., Costes M., Goiran M., Broto J.-M., Schäfer S., Hayn R., Richter J., Millet P., Stepanov A.- High-field magnetization and electron spin resonance in the spin-gap system Na1.286 V2O5.- Physical Review B, vol. 77, p. 224434, 2008 - http://dx.doi.org/10.1103/PhysRevB.77.224434

Giot D., Roche P., Gasiot G., Autran J.L, Harboe-Sørensen R.- Heavy ion testing and 3D simulations of multiple cell upset in 65nm standard SRAMs.- IEEE Transactions on Nuclear Science, vol. 55, n° 4, p. 2048-2054, 2008 - http://dx.doi.org/10.1109/TNS.2008.916063

Giovanelli L., Amsalem P., Themlin J. M., Ksari Y., Abel M., Nony L., Koudia M., Bondino F., Magnano E., Mossoyan-Deneux M., Porte L.  - Evolution of the electronic structure at the interface between a thin film of halogenated phthalocyanine and the Ag(111) surface.- Journal of Physical Chemistry C, vol. 112, p. 8654, 2008

Gomri S., J.L. Seguin, J. Guerin, K. Aguir.- A mobility and free carriers density fluctuations-based model of adsorption-desorption noise in gas sensor.- Journal of Physics D : Applied Physics, vol. 41, p. 065501, 2008

Guérin J., M. Bendahan, K. Aguir.- A dynamic response model for the WO3-based ozone sensors.- Sensors and Actuators B: Chemical, vol. 128, n° 2, p.  462-467, 2008

Halbwax M., Sarnet T., Delaporte Ph., Sentis M., Etienne H., Torregrosa F., Vervisch V., Perichaud I., Martinuzzi S.- Micro and nano-structuration of silicon by femtosecond laser : Application to silicon photovoltaic cells fabrication.- Thin Solid Films, vol. 516, p. 6791-6795, 2008

Haselwandter C.A., Raymond L., Verga A., Vvedensky D.- Occam's razor on surfaces : renormalization of microscopic processes.- Journal of Physics : Condensed Matter, vol 20, p. 304203, 2008

Hassam S., Boa D., Fouque Y., Kotchi K.P., Rogez J.- Thermodynamic investigation of Pb-Sb system.- Journal of Alloys and Compounds, vol. 476, p. 74, 2009 - http://dx.doi.org/10.1016/j.jallcom.2008.09.002

Hasselbach K., C. Ladam, V.O. Dolocan, D. Hykel, T. Crozes, K. Schuster, Mailly D.- High resolution magnetic imaging : MicroSQUID Force Microscopy.- Journal of Physics : Conference Series, vol. 97, p. 012330, 2008

Haubner K., Jaehne E., Adler H.-J. P., Koehler D., Loppacher C., Eng L.M., J. Grenzer, Herasimovich A., Scheinert S.- Assembly, structure, and performance of an ultra-thin film organic field-effect transistor (OFET) based on substituted oligothiophenes.- Physica Status Solidi (a),  - vol. 205, p. 430, 2008

Hoummada K., Mangelinck D., Perrin C., Carron V., et Holliger P.- Measurement of arsenic redistribution at nickel silicide/silicon interface by secondary ion mass spectrometry: artefact and optimized analysis conditions.- Journal of Applied Physics, vol 104, 2, p. 024313, 2008 - http://dx.doi.org/10.1063/1.2959643

Hoummada K., Portavoce A., Perrin-Pellegrino C., Mangelinck D., et Bergman C.- Differential scanning calorimetry measurements of kinetic factors involved in salicide process.- Applied Physics Letters, vol 92, p. 133109, 2008 - http://dx.doi.org/10.1063/1.2905293

Hull R., Floro J., Graham J., Gray J., Gherasimova M., Portavoce A., Ross F.M.- Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures.- Materials Science in Semiconductor Processing, Vol. 11, p. 160, 2008 - http://dx.doi.org/10.1016/j.mssp.2008.10.011

Imbert B., M. Gregoire, S. Zoll, R. Beneyton, S. Del-Medico, C. Trouiller, O. Thomas.- Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approach.- Microelectronic Engineering, vol. 85, p. 2005-2008, 2008 - http://dx.doi.org/10.1016/j.mee.2008.04.021

Imbert B., Zoll S., Garnier P., Pernet B., Galpin D., Beneyton R., Juhel M., Mur P., Carron V., Thomas O.- Self-aligned nickel-platinum silicide oxidation.- Materials Science and Engineering B, vol. 154-155, p.155-158, 2008 - http://dx.doi.org/10.1016/j.mseb.2008.08.010

Jennane A., Sassi O., Bernardini J., Moya G.- Point defects characterization in Ni2Si as deduced from isothermal magnetic susceptibility measurements.- Defect and Diffusion forum, vol.273-276,  p.312-317, 2008 - http://dx.doi.org/10.4028/www.scientific.net/DDF.273-276.312   

Kammouni A., Saikaly W., Dumont M., Marteau C., Bano X., Charaï A.       - A methodology suitable for TEM local measurements of carbon concentration in retained austenite.- Materials Characterization,  - vol. 59, no 9, p. 1307-1311, 2008 - http://dx.doi.org/10.1016/j.matchar.2007.11.003

Kaouache B., S. Labat, O. Thomas, S. Maitrejean, V. Carrreau.- Texture and strain in narrow copper damascene interconnect  lines: an x-ray diffraction analysis.- Microelectronic Engineering, vol. 85, p. 2175-2178, 2008 - http://dx.doi.org/10.1016/j.mee.2008.06.017

Kazan M., Ottaviani L., Moussaed E., Nader R., Masri P.- Effect of introducing gettering sites and subsequent Au diffusion on the thermal conductivity and the free carrier concentration in n-type 4H-SiC.- Journal of Applied Physics, vol. 103, n° 053707, p. 1-6, 2008

Khachane M., Nowakowski P., Villain S., Gavarri J-R., Muller Ch., Luk’yanchuk I., Elaatmani M., Outzourhite A., Zegzouti A.- Catalytic studies of RuO2 films deposited on ferroelectrics films by spin coating process.- Ferroelectrics, vol. 371, p. 34-42, 2008 - http://dx.doi.org/10.1080/00150190802385069

Klappenberger F., M. E. Cañas-Ventura, S. Clair, S. Pons, U. Schlickum, Z.-R. Qu, T. Strunkus, A. Comisso, C. Wöll, H. Brune, K. Kern, A. DeVita, M. Ruben, J. V. Barth.- Does the surface matter? Hydrogen-bonded chain formation of an oxalic amide derivative in a two-and three-dimensional environment.- ChemPhysChem, vol. 9, p. 2522, 2008

Kopia A., K. Kowalski, Ch. Leroux, M. Chmielowska.- A microscopic and spectroscopic investigations in CuOx-CeO2-delta/Si thin films.- Archives of Metallurgy and Materials, vol 53, p57-60, 2008

Kopia A., K. Kowalski, M.Chmielowska, Ch. Leroux.- Electron microscopy and spectroscopy investigations of CuOx-CeO2-/Si thin films.- Surface Science, vol. 602, p 1313-1321, 2008

Lasagni F., Mingler B., Dumont M., Degischer H.P.- Precipitation kinetics of Si in Aluminium alloys.- Materials Science and Engineering A, vol. 480, no 1-2, p. 383-391, 2008 - http://dx.doi.org/10.1016/j.msea.2007.07.008

Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S.- Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications.- Solid State Phenomena, vol. 131-133, p. 33, 2008

Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S.- Structural characterization of nc-Si films grown by low-energy PECVD on different substrates.- Applied Surface Science, vol. 254, p. 2804, 2008

Le Roux C., Lopez L., Firiti A., Ogier J.L., Lalande F., Laffont R., Micolau G.- An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test.- Solid-State Electronics, vol. 52, n° 10, p. 1550-1554, 2008 - http://dx.doi.org/10.1016/j.sse.2008.06.011

Lesea A., Castellani-Coulié K., Waysand G., Le Mauff J., Sudre C.- Qualification methodology of sub-micron ICs in the Low Noise Underground Laboratory of Rustrel.- IEEE Transactions on Nuclear Science, vol. 55, n° 4, p. 2148-2153, 2008 - http://dx.doi.org/10.1109/TNS.2008.2000863

Liu Q.S., Zhou J.Y., Wang A., Polezhaev V.I., Fedyushkin A., Nguyen-Thi H., Billia B.- Thermovibrational instability of Rayleigh-Marangoni-Benard convection in two-layer fluid systems.- Advanced Space Research, vol. 41, p. 2131-2136, 2008

Lombardo P., Guisiano J.C., Hayn R.- Full diagonal disorder in a strongly correlated system.- Physica B : Condensed Matter, vol. 403, p. 3485, 2008

Loussier X., Munteanu D., Autran J.L., Tintori O.- Impact of geometrical and electrical parameters on speed performances in ultimate double-gate metal-oxide-semiconductor field-effect transistor.- Japanese Journal of Applied Physics, vol. 47, n° 5, p. 3390-3395, 2008 - http://dx.doi.org/10.1143/JJAP.47.3390

Makoudi Y., E. Duverger, M. Arab, F. Palmino, F. Cherioux, G. Rapenne.  - Self alignment of molecular chains on pre-structured Sm/Si (111) interface.- ChemPhysChem, vol. 9, p. 1437, 2008

Makoudi Y., F. Palmino, E. Duverger, M. Arab, F. Cherioux, Ch. Ramseyer, B. Therrien, M. J-L. Tschan and G. Suss-Fink.- High resolution STM images and molecular modelling of the adsorption of 2,4,6-Tri(2’thienyl)-1,3,5-trizaine on Si-B interface at room temperature.- Physical Review Letters, vol. 100, p. 076405, 2008

Makoudi Y., M. Arab, F. Palmino, E. Duverger, F. Cherioux.- Complete supramolecular assembled adlayer on silicon surface at room temperature.- Journal of the American Chemical Society, vol. 130, p. 6670, 2008

Makoudi Y., M. El Garah, F. Palmino, E. Duverger, M. Arab and F. Cherioux.- Adsorption of an organic zwitterion on a Si(111)-7x7 surface at room temperature.- Surface Science, vol. 602, p. 2719, 2008

Malkin B.Z., Vanyunin M.V., Barbara B., Bertaina S.- Relaxation rates of magnetization in LiYF4:Ho3+ crystal.- Journal of Alloys and Compounds, vol. 451, n° 1-2, p. 473-476, 2008 - http://dx.doi.org/10.1016/j.jallcom.2007.04.193

Mangelinck D., Hoummada K.- Effect of stress on the transformation of Ni2Si into NiSi.- Applied Physics Letters, vol. 92, 254101, 2008 - http://dx.doi.org/10.1063/1.2949751

Mangelinck D., K. Hoummada, O. Cojocaru-Mirédin, E. Cadel, C. Perrin-Pellegrino, D. Blavette.- Atom probe tomography of Ni silicides : First stages of reaction and redistribution of Pt.- Microelectronic Engineering, vol. 85, n° 10, p. 1995-1999, 2008 - http://dx.doi.org/10.1016/j.mee.2008.04.048

Mangelinck-Noël N., Duffar T.- Modelling of the transition from a planar faceted front to equiaxed growth : application to photovoltaic polycrystalline silicon.- Journal of Crystal Growth, vol. 311, n° 1, p. 20-25, 2008

Marfaing J., Rochette P., Pellerey J., Chaurand P., Suavet C., Folco L.- Study of a set of micrometeorites from Antarctica using magnetic and ESR methods coupled with micro-XRF.- Journal of Magnetism and Magnetic Materials, vol. 320, p.1687, 2008 - http://dx.doi.org/10.1016/j.jmmm.2008.01.037

Marine W., Bulgakova N.M., Patrone L., Ozerov I.- Insight into electronic mechanisms of nanosecond-laser ablation of silicon.- Journal of Applied Physics, vol. 103, p. 094902, 2008

Markevich V.P., Bernardini S., Hawkins I.D., Peaker A.R., Kolkovsky Vl., Nylandsted Larsen A., Dobaczewski L.- Electrically active defects induced by hydrogen and helium implantations in Ge.- Materials Science in Semiconductor Processing, vol. 11, 5-6, p. 354-359, 2008 - http://dx.doi.org/10.1016/j.mssp.2008.10.006

Martinez A., Barker J.R., Bescond M., Brown A.R., Asenov A.- Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain.- Journal of Physics – Conference Series, vol. 109, p.012026, 2008

Martinez A., Barker J.R., Svizhenko A., Anantram A., Bescond M., Asenov A.- Ballistic quantum simulators for studying variability in nanotransistors.- Journal of Computational and Theoretical Nanoscience, vol. 5, p. 2289-2310, 2008 (review paper)

Martinez A., Bescond M., Brouwn A.R., Barker J.R., Asenov A.- A full 3D non-equilibrium green functions study of a stray charge in a nanowire MOS transistor.- Journal of Computational Electronics, vol. 7, p. 359, 2008 - http://dx.doi.org/10.1007/s10825-008-0240-4

Martinie S., Le Carval G., Munteanu D., Autran J.L.- New unified analytical model of backscattering coefficient from low to high field conditions in quasi-ballistic transport .- IEEE Electron Device Letters, vol. 29, N°12, p. 1392-1394, 2008 - http://dx.doi.org/10.1109/LED.2008.2007305

Martinie S., Le Carval G., Munteanu D., Soliveres S., Autran J.L.- Impact of ballistic and quasi-ballistic transport on performances of double-gate MOSFET-based circuits.- IEEE Transactions on Electron Devices, vol. 55, no. 9, p. 2443-2453, 2008 - http://dx.doi.org/10.1109/TED.2008.927656

McFadden S., Sturz L., Jung H., Mangelinck-Noël N., Nguyen-Thi H., Zimmermann G., Billia B., Browne D. J., Voss D., Jarvis D.- Validation of a front-tracking model of the columnar to equiaxed transition using solidification results from the Maxus 7 microgravity platform.- Journal Japan Society Microgravity Application, vol. 25, p. 489-494, 2008

Milde P., Zerweck U., Eng L.M., Abel M., Giovanelli L., Nony L., Mossoyan M., Porte L., Loppacher Ch.- Interface dipole formation of different ZnPcCl8 phases on Ag(111) observed by Kelvin probe force microscopy.- Nanotechnology,  - vol. 19, p. 305501, 2008

Minkevich A., T. Baumbach, M. Gailhanou, O. Thomas.- Applicability of an iterative inversion algorithm to the diffraction pattern from inhomogeneously strained crystals.- Physical Review B, vol.  78, p. 174110, 2008 - http://dx.doi.org/10.1103/PhysRevB.78.174110

Monestier F., Simon J.J, Torchio Ph., Escoubas L., Ratier B.,Hojeij W.,Lucas B.,Moliton A.,Cathelinaud M., Defranoux C.- Optical modeling of organic solar cells based on CuPc and C60.- Applied Optics, vol. 47, n° 13, p. C251-C256, 2008

Moreau M., Munteanu D. and Autran J.L.- Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor field-effect transistors.- Japanese Journal of Applied Physics, vol. 47, no. 9, p. 7013-7018, 2008 - http://dx.doi.org/10.1143/JJAP.47.7013

Munteanu D. and Autran J.L.- Modeling and simulation of single-event effects in digital devices and Ics.- IEEE Transactions on Nuclear Science, vol. 55, no. 4, p. 1854-1878, 2008 - http://dx.doi.org/10.1109/TNS.2008.2000957

Nehari, K., Lannoo, M., Michelini, F., Cavassilas, N., Bescond, M., Autran, J. L.- Improved effective mass theory for silicon nanostructures.- Applied Physics Letters, vol. 93, no 9, p. 092103, 2008 - http://dx.doi.org/10.1063/1.2978196

Nguyen Thi H., Reinhart G., Buffet A., Schenk T., Mangelinck N., Jung H., Bergeon N., Billia B., Härtwig H., Baruchel J.- In situ and real-time analysis of TGZM phenomena by synchrotron X-ray radiography.- Journal of Crystal Growth, vol. 310, p. 2906-2914, 2008

Nikiforov M. P., Zerweck U., Milde P., Loppacher Ch., Park T-H., Uyeda H.T., Therien M.J., Eng L., Bonnell D.- The effect of molecular orientation on the potential of porphyrin-metal contacts.- Nanoletters, vol. 8, p. 110, 2008

Noheda B., Muller Ch.- Guest Editorial: Phase transitions in functional thin films.- Phase Transitions, vol. 81, n° 7-8, p. 603-606, 2008

Nowakowski P., Dallas J.P., Villain S., A. Kopia A.  and Gavarri J.R.- Structure, microstructure, and size dependent catalytic properties of nanostructured ruthenium dioxide.- Journal of Solid State Chemistry, vol. 181, no 5, 2008, p. 1005-1016,  2008

Nowakowski P., Villain S., Kopia A., Suliga I. and Gavarri J.R.- Catalytic conversion of air-methane flow by nanostructured ruthenium dioxide: FTIR spectroscopy and modeling.- Applied Surface Science, vol. 254, n° 18, p. 5675-5682, 2008

Pareige P., Cadel E., Sauvage X., Deconihout B., Blavette D., Mangelinck D.  - Atomic resolution analyses of nano-structured materials by atom probe tomography.- International Journal of Nanotechnology, vol. 5, p. 592-608, 2008

Pascale A., Berbezier I., Ronda A., Kelires P.- Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001).- Physical Review B, vol. 77, p. 075311, 2008

Pasternak S, Aquilanti G, Pascarelli S, Poloni R, Canny B, Coulet M V, Zhang L.- A diamond anvil cell with resistive heating for high pressure and high temperature x ray diffraction and absorption studies.- Review of Scientific Instruments, vol. 79, p. 8510315, 2008 - http://dx.doi.org/10.1063/1.2968199

Pelletier B., Juhel M., Trouiller C., Beucher D., Autran J.L., Morin P.- Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties.- Materials Science and Engineering B – Advanced Functional Solid-State Materials, vol. 154, p. 252-255, 2008 - http://dx.doi.org/10.1016/j.mseb.2008.09.025

Perez M., Dumont M., Acevedo-Reyes D.- Implementation of classical nucleation and growth theories for precipitation.- Acta Materialia, vol. 56, no 9, p. 2119-2132, 2008 - http://dx.doi.org/10.1016/j.actamat.2007.12.050

Perrin C., Mangelinck D., Nemouchi F., Labar J., Lavoie C., Bergman C., et Gas P.- Nickel silicides and germanides: Phases formation, kinetics and thermal expansion.- Materials Science and Engineering : B, vol 154-155, p. 163-167, 2008 - http://dx.doi.org/10.1016/j.mseb.2008.09.042

Pic D., Ogier J.L., Goguenheim D.- Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO2 thin oxides stressed to hard breakdown.- Microelectronics Reliability, vol. 48, n° 3, p. 335-341, 2008 - http://dx.doi.org/10.1016/j.microrel.2007.08.006

Pic D., Regnier A., Pean V., Ogier J.L., Goguenheim D.- Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.- Microelectronics Reliability, vol. 48 (8-9), p. 1318-1321, 2008 - http://dx.doi.org/10.1016/j.microrel.2008.07.050

Portavoce A., Chai G., Chow L., Bernardini J.- Nanometric size effect on Ge diffusion in polycrystalline Si.- Journal of Applied Physics, vol. 104, p. 104910, 2008 - http://dx.doi.org/10.1063/1.3010297

Portavoce A., Hull R., Reuter .C., Copel M., Ross F.M.- Control of homoepitaxial Si nanostructures by locally modified surface reactivity.- Applied Physics Letters, vol. 92, p. 053106-, 2008 - http://dx.doi.org/10.1063/1.2841673

Pradeilles N., Record M.C., Granier D., Marin-Ayral R.M.- Synthesis of beta-SiAlON: a combined method using sol-gel and SHS processes.- Ceramics International, vol. 34, n°5, p. 1189-1194, 2008 - http://dx.doi.org/10.1016/j.ceramint.2007.02.017

Pradeilles N., Record M.C., Marin-Ayral R.M., Linde A.V., Studenikin I.A., Grachev V.V.- Influence of thermal conditions on combustion synthesis of Si2N2O phase.- Materials Research Bulletin, vol. 43, p. 463-472, 2008 - http://dx.doi.org/10.1016/j.materresbull.2007.02.032

Radtke G.- Momentum-resolved energy loss near edge structure in SrCu2(BO3)2.- Ultramicroscopy, vol. 108, no 9, p.893-900, 2008

Radtke G., Saúl A., Dabkowska H.A., Gaulin B.D., Botton G.A.- Electronic structure of the quasi-two-dimensional spin-gap system SrCu2(BO3)2 : Experiment and theory.- Physical Review B, vol. 77, no 12, p.125130 (1-5), 2008

Raguet J.R., Bidal V., Regnier A., Mirabel J.M., Laffont R., Bouchakour R.- New EEPROM concept for single bit operation.- Solid-State Electronics, vol. 52, n° 10, p. 1525-1529, 2008 - http://dx.doi.org/10.1016/j.sse.2008.06.027

Reinhart G., Buffet A., Nguyen-Thi H., Billia B., Jung H., Mangelinck-Noel N., Bergeon N., Schenk T., Härtwig J., Baruchel J.- In situ and real-time analysis of the formation of strains and microstructure defects during solidification of Al-3.5 Wt Pct Ni alloys.- Metallurgical Materials Transactions A, vol. 39, p. 865-874, 2008

Richard M.-I., Chen G., Schülli T.U., Renaud G., Bauer G.- Coalescence of domes and superdomes at a low growth rate or during annealing: towards the formation of flat-top superdomes.- Surface Science, vol. 602, 2157, 2008 - http://dx.doi.org/10.1016/j.susc.2008.04.024

Robert-Inacio F.- Shape studies in 2D and 3D on molecular islands of carbon chains self-assembled on silicon in nanoelectronics.- European Physical Journal: Applied Physics, vol. 41, N°1, pp 53-68, Janvier 2008 - http://dx.doi.org/10.1051/epjap:2007171

Rogdakis K., Lee S.-Y., Bescond M., Lee S.-K., Bano E., Zekentes K.- 3C-Silicon Carbide nanowire FET: An experimental and theoretical approach.- IEEE Transactions on Electron Devices, vol. 55, n° 8, p.1970-1976, 2008 - http://dx.doi.org/10.1109/TED.2008.926667

Rowell N.L., Lockwood D.J., Karmous A., Szkutnik P.D., Berbezier I., Ronda A.- Photoluminescence of Ge nanocrystals self-assembled on SiO2.- Superlattices and Microstructures, vol. 44, n° 4, p. 305-314, 2008

Saitzek S., BlachJ.F., Villain S., and Gavarri J.R.- Nanostructured ceria: a comparative study from X-ray diffraction, Raman spectroscopy and BET specific surface measurements.- Physica Status Solidi (a), 1– 6, 2008 - http://dx.doi.org/10.1002/pssa.200723419

Saitzek S., F. Guinneton, G. Guirleo, L. Sauques, K. Aguir, J.R. Gavarri.- VO2 thin films deposited on silicon substrates from V2O5 target: limits in optical switching properties and modeling.- Thin Solid Films, vol. 516, n° 6, p.  891-897, 2008

Sassi M., Oison V. Debierre J. M.- First principle study of a bimolecular thin film on Ag(111) surface.- Surface Science, vol. 602, n° 17, p. 2856-2862, 2008

Shao Y., Hughes R.A., Dabkowski A., Radtke G., Gong W.H., Preston J.S., Botton GA.- Structural and transport properties of epitaxial niobium-doped BaTiO3 films.- Applied Physics Letters, vol. 93, no 19, p.192114 (1-3), 2008

Shin H.-J., S. Clair, Y. Kim, M. Kawai.- Electronic structure of single-walled carbon nanotubes on ultrathin insulating films.- Applied Physics Letters, vol. 93, p. 233104, 2008

Shuleshova O., Holland-Moritz D., Löser W., Reinhart G., Iles G.N., Büchner B.- Metastable formation of decagonal quasicrystals during solidification of undercooled Al-Ni melts: in situ observations by synchrotron radiation.- Europhysics Letters, p. 36002, 2008

Steimer C, Coulet M V, Welnic W, Dieker H, Detemple R, Bichara C, Beuneu B, Gaspard J P, Wuttig M.- Characteristic ordering in liquid phase change materials.- Advanced Materials,  vol. 20, p. 1–6, 2008 - http://dx.doi.org/10.1002/adma.200700016

Szkutnik P.D., Karmous A., Bassani F., Ronda A., Berbezier I., Gacem K., El Hdiy A., Troyon M.- Ge nanocrystals formation on SiO2 by dewetting : application to memory.- The European Physical Journal : Applied Physics, vol. 41 , p.103-106, 2008

Tay L.-L., Rowell N.L., Ayoub J.-P., Berbezier I., Morresi L., Pinto N.- Raman measurements of Ge1−xMnx epilayers.- Superlattices and Microstructures, acceptée, 2009 - vol. 44, n° 4, p. 315-322, 2008

Thibault-Penisson J., M. Hÿtch.- HREM study of the strain field induced by the entrance of a matrix dislocation within a coherent twin GB in Ge  - Solid State Phenomena, vol 131-133 p. 437-442, 2008

Thomas O.- Diffraction analysis of elastic strains in micro and nano-structures.- Zeitschrift für Kristallographie, vol. 223, p. 569-574, 2008 - http://dx.doi.org/10.1524/zkri.2008.1215

Uppal H.J., Bernardini S., Efthymiou E., Volkos S.N., Dimoulas A., Markevich V., Hamilton B., Peaker A.R.- Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks : A conducting AFM study.- Materials Science in Semiconductor Processing, vol. 11, 5-6, p. 250-253, 2008 - http://dx.doi.org/10.1016/j.mssp.2008.10.006

Vartanyants I. A., Zozulya A. V., Mundboth K., Yefanov O. M., Richard M.-I., Wintersberger E., Stangl J., Diaz A., Mocuta C., Metzger T.H., Bauer G., Boeck T., and Schmidtbauer M.- Crystal truncation planes revealed by three-dimensional reconstruction of reciprocal space.- Physical Review B, vol. 77, p. 115317, 2008 - http://dx.doi.org/10.1103/PhysRevB.77.115317

Vervisch V., Etienne H., Torregrosa F., Ottaviani L., Pasquinelli M., Sarnet T., Delaporte P.- Realization of ultra-shallow junctions by plasma immersion ion implantation and laser annealing.- Journal of Vacuum Science & Technology, vol. B 26, p. 286, 2008

Zarbout K.,  Si Ahmed A.,  Moya G.,  Bernardini J.,  Goeuriot D.,  Kallel A.- Stability of trapped charges in sapphires and alumina ceramics: evaluation by secondary electron emission.- Journal of Applied Physics, vol. 103, n° 6, p.054107/1-054107/7, 2008 - http://dx.doi.org/10.1063/1.2891792

Zhou B.H., Jung H., Mangelinck-Noël N., Nguyen Thi H., Billia B., Liu Q.S., Lan C.W.- Comparative study of the influence of natural convection on directional solidification of Al - 3.5wt% Ni and Al – 7wt% Si alloys.- Advanced. Space Research, vol. 41, p. 2112-2117, 2008

Zwaneveld N., Pawlak R., Abel M., Catalin D., Gigmes D., BertinD., Porte L.- Organized formation of 2D extended covalent organic frameworks at surfaces.- Journal of the American Chemical Society, vol.130, p. 6678, 2008


2009

Ahoussou A.P., Rogez J., Yapi A., Mikaelian G., Kone A.- Contribution to thermochemical studies of E3811-(1-x)SiO2]-0.2Na2O glasses.- Chinesese Chemical Letters, vol. 20, 245-249, 2009

Amara H, Roussel JM, Bichara C, Gaspard JP, Ducastelle F.- Tight-binding potential for atomistic simulations  of carbon interacting with transition metals : Application to the Ni-C system.- Physical Review B, vol. 79, p. 014109, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.014109

Amsalem P., Giovanelli L., Themlin J.-M., Angot T.- Electronic and vibrational properties at the ZnPc/Ag(110) interface.- Physical Review B, vol. 79, n°23, p. 235426, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.235426

Aqua J.N., Fisher M.E.- Criticality in multicomponent spherical models: Results and cautions.- Physical Review B, vol. 79, n° 1, p. 011118, 2009 - http://dx.doi.org/10.1103/PhysRevE.79.011118

Autran J.L., Roche P., Sauze S., Gasiot G., Munteanu D., Loaiza P., Zampaolo M., Borel J.- Altitude and Underground Real-Time SER Characterization of CMOS 65nm SRAM.- IEEE Transactions on Nuclear Science, Vol. 56, 2009, Vol. 56, N°4, p. 2258-2266.- http://dx.doi.org/10.1109/TNS.2009.2012426

Aziza H., Pérez A., Bergeret E.- Analog Blocks Design Automation.- WSEAS Transactions on Circuits and Systems, vol. 8, n° 8, p.686-695, 2009 - ISSN: 1109-2734

Bakiz B., Guinneton F., Arab M., Villain S., Benlhachemi A., Gavarri J.R.- Temperature dependent electrical properties and catalytic activities of La2O3 – CO2 – H2O phase system.- Advances in Materials Science and Engineering, Volume 2009, Article ID 612130, 4 pages, 2009 - doi:10.1155/2009/502437

Balogh Z., Erdélyi Z., Beke D.L., Portavoce A., Girardeaux C., Bernardini J., Rolland A.- Silver grain boundary diffusion in Pd.- Applied Surface Science, vol. 255, p. 4844, 2009 - http://dx.doi.org/10.1016/j.apsusc.2008.12.010

Balogh Z., Erdélyi Z., Beke D.L., Portavoce A., Girardeaux C., Bernardini J., Rolland A.- Determination of Grain Boundary Diffusion Coefficients in C-regime by Hwang-Balluffi method: Silver Diffusion in Pd.- Defect and Diffusion Forum, vol. 289-292, p. 763, 2009

Barral V., Poiroux T., Barraud S., Bonno O., Andrieu F., Faynot O., Munteanu D., Autran J.L. and Deleonibus S.- Evidences on the physical origin of the unexpected transport degradation in ultimate n-FDSOI devices.- IEEE Transactions on Nanotechnology, vol. 8, n° 2, p. 167-173, 2009 - http://dx.doi.org/10.1109/TNANO.2008.2010128

Barral V., Poiroux T., Bournel A., Munteanu D., Autran J.L. and Deleonibus S.- Experimental investigation on the quasi-ballistic transport: part I- Determination of a new backscattering coefficient extraction methodology.- IEEE Transactions on Electron Devices, vol. 56, n° 3, p. 408-419, 2009 - http://dx.doi.org/10.1109/TED.2008.2011681

Barral V., Poiroux T., Munteanu D., Autran J.L. and Deleonibus S.- Experimental investigation on the quasi-ballistic transport: Part II- Backscattering coefficient extraction and link with the mobility.- IEEE Transactions on Electron Devices, vol. 56, n° 3, p. 420-430, 2009 - http://dx.doi.org/10.1109/TED.2008.2011682

Benard C., Math G., Fornara P., Ogier J.L., Goguenheim D.- Influence of various process steps on the reliability of PMOSFETs submitted to Negative Bias Temperature Instabilities.- Microelectronics Reliability, 2009, Vol. 49(9-11), p. 1008–1012.- http://dx.doi.org/10.1016/j.microrel.2009.06.022

Berbezier I., Ronda A.- SiGe Nanostructures.- Surface Science Reports, vol. 64, n° 2, p. 47-98, 2009

Berche A., Marinelli F., Mikaelian G., Rogez J., Record M.C.- Enthalpies of formation of the La-Zn compounds between 298 and 910K. Experimental and theoretical investigations.- Journal of Alloys and Compounds,  - vol. 475, 79, 2009 - http://dx.doi.org/10.1016/j.jallcom.2008.07.060

Berche A., Rado C., Rapaud O., Gueneau C., Rogez J.- Thermodynamic study of the U-Si system.- Journal of Nuclear Materials, 389, 1, 101-107, 2009

Berche A., Record M.C., Rogez J.- Critical review of the La-Zn system.- The Open Thermodynamics Journal, vol. 3, 7-16, 2009 - http://dx.doi.org/10.2174/1874396X00903010007

Bergeon N., Weiss C., Mangelinck-Noël N, Billia B.- Interferometric method for the analysis of dendrite growth and shape in 3D extended patterns in transparent alloys.- Transactions of the Indian Institute of Metals, 62, 4-5, 455-460, 2009

Bernier N., Brosset C., Bocquet F., Tsitrone E., Saikaly W., Khodja H., Alimov V.K., Gunn J.P.- Localization by TEM and EELS of deuterium trapping sites in CFC exposed to plasma irradiation in Tore Supra.- Journal of Nuclear Materials, vol. 385, n° 3, p. 601, 2009 - http://dx.doi.org/10.1016/j.jnucmat.2009.01.031

Bertaina S., Chen L.,  Groll N., Van Tol J., Dalal N.S., and Chiorescu I.- Multiphoton coherent manipulation in large-spin qubits.- Physical Review Letters, vol. 102, p. 050501 2009 - http://dx.doi.org/10.1103/PhysRevLett.102.050501

Bertaina S., Shim J.H., Gambarelli S., Malkin B.Z., Barbara B.- On the spin-orbit qubits of rare-earths ions in axially symmetric crystal-fields.- Physical Review Letter, vol. 103, p. 226402, 2009 - http://dx.doi.org/10.1103/PhysRevLett.103.226402

Bescond M. , M. Lannoo, F. Michelini, L. Raymond, and M. G. Pala.- 3d real-space quantum transport simulation of nanowire mos transistors: Influence of the ionized doping impurity.- Microelectronics Journal, vol. 40(4-5), p. 756–758, 2009 - doi: 10.1016/j.mejo.2008.11.009

Bescond M., C. Li, M. Lannoo.- Nanowire transistor modeling: influence of ionized impurity and correlation effects.- Journal of Computational Electronics, vol. 8, 382, 2009, Invited paper - http://dx.doi.org/10.1007/s10825-009-0279-x

Bescond M., Lannoo M., Raymond L., Michelini F.- Theoretical study of ionized impurities in silicon nanowire MOS transistors.- Solid State Phenomena,  - vol.156-158, p. 511., 2009 - http://dx.doi.org/10.4028/www.scientific.net/SSP.156-158.511

Bescond M., M. Lannoo, F. Michelini, L. Raymond, M.G. Pala.- 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity.- Microelectronics Journal, vol.  40, 756, 2009 - http://dx.doi.org/10.1016/j.mejo.2008.11.009

Beutier G., Marty A., Livet F., Haznar A., Dudzik E., Stanescu S., Chamard V. and van der Laan G.- Magnetic memory in discrete media observed by coherent soft x-ray resonant scattering.- New Journal of Physics, vol. 11, p. 113026, 2009 - http://dx.doi.org/10.1088/1367-2630/11/11/113026

Bezerra Lopes F. W. , Pereira de Souza C. , Vieira de MoraisA. M. , Dallas J- P. , Gavarri J- R.- Determination of RE2Ce2O7 pyrochlore phases from monazite-allanite ores.- Hydrometallurgy, vol. 97, n° 3-4, p. 167-172, 2009

Bogno A., Nguyen-Thi H., Billia B., Bergeon N., Mangelinck-Noël N., Boller E., Schenk T., Baruchel J.- In situ analysis of dendritic equiaxed microstructure formation in Al-Cu alloys by synchrotron X-ray radiography.- Transactions of the Indian Institute of Metals, 62, 4-5, 427-431, 2009 

Bouffaron R., Escoubas L., Brissonneau V., Simon J.J., Berginc G., Torchio Ph., Flory F., Masclet Ph.- Spherically shaped micro-structured antireflective surfaces.- Optics Express, 17, 24, 21590-21597, 2009

Bourja L., Bakiz B., Benlhachemi A., Ezahri M., Valmalette J.C., Villain S., Gavarri J.R.- Structural and Raman vibrational studies of bismuth cerium oxide system CeO2-Bi2O3.- Advances in Materials Science and Engineering, Volume 2009, Article ID 502437, 4 pages, 2009 - doi:10.1155/2009/502437

Buran C., M. G. Pala, M. Bescond, M. Dubois, and M. Mouis.- Three dimensional real space simulation of surface roughness in silicon nanowire FETs.- IEEE Transactions on Electron Devices, vol. 56, 2186, 2009 - http://dx.doi.org/10.1109/TED.2009.2028382

Canino M., Regula G., Lancin M., Xu M., Pichaud B. Ntsoenzok E., Barthe M.F.- Cavities at the Si projected range by high dose and energy Si ion implantation in Si.- Materials Science and Engineering: B, vol 159-160, p. 153-156, 2009

Canino M., Regula G., Xu M., Ntsoenzok E., Pichaud B.- Defect engineering via ion implantation to control B diffusion in Si.- Materials Science and Engineering: B, vol 159-160, p. 338-341, 2009

Cayzac R., Boulc'h F., Bendahan M., Lauque P., Knauth P.- Direct preparation of crystalline CuInS2 thin films by radiofrequency sputtering 1.- Materials Science and Engineering B, vol. 157, p 66-71, 2009 - http://dx.doi.org/10.1016/j.mseb.2008.12.018

Cayzac R., Boulc'h F., Hornebecq V., Djenizian T., Bendahan M., Pasquinelli M., Knauth P.- Optical absorbance enhancement by electrochemical surface roughening of CuInS2 thin films.-  Journal of Materials Research, vol. 24,  p 3044-3049, 2009 - http://dx.doi.org/10.1557/JMR.2009.0387

Chamard V., Diaz A., Stangl J.  et Labat S.- Structural investigation of InAs nanowires with coherent x-rays.- Journal of Strain Analysis, vol. 44, p.533, 2009 - http://dx.doi.org/10.1243/03093247JSA573

Chanier T., Virot F., Hayn R.- Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors : Ab initio Ab initio calculated XANES and XMCD spectra of Fe(II) phthalocyanine.- Physical Review B, vol. 79, p. 205204, 2009 - doi: 10.1103/PhysRevB.79.205204

Claves D., H. Lib, M. Duboisa, Y. Ksari.- An unusual weak bonding mode of fluorine to single-walled carbon nanotubes.- Carbon , vol. 47, n°1, p.2557–2562, 2009 - http://dx.doi.org/10.1016/j.carbon.2009.04.041

Cojocaru-Mirédin O., E. Cadel, B. Deconihout, D. Mangelinck and D. Blavette.- Three-dimensional atom mapping of boron in implanted silicon.- Ultramicroscopy, vol. 109,  p. 649-653, 2009 - http://dx.doi.org/10.1016/j.ultramic.2008.09.008

Cojocaru-Mirédin O., E. Cadel, D. Blavette, D. Mangelinck, K. Hoummada, C. Genevois, B. Deconihout.- Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)–Si contacts.- Ultramicroscopy, vol. 109, n° 7, p. 797-801, 2009 - http://dx.doi.org/10.1016/j.ultramic.2009.02.001

Cojocaru-Mirédin O., E. Cadel, F. Vurpillot, D. Mangelinck, D. Blavette.- 3D Atomic-scale imaging of Boron clusters in implanted silicon.- Scripta Materialia, vol. 60, p. 285, 2009 - http://dx.doi.org/10.1016/j.scriptamat.2008.10.008

Commin L., Dumont M., Masse J.E., Barrallier L.- Friction stir welding of AZ31 Magnesium alloy rolled sheets - Influence of processing parameters.- Acta Materialia, vol. 57, n° 2,  p. 326-334, 2009 - http://dx.doi.org/10.1016/j.actamat.2008.09.011

Connétable D., Thomas O.- First principles calculations of the elastic constants of NiSi.- Physical Review B, vol. 79, p. 094101, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.094101

Coratger R., Gourdon A., Benjalal Y., Bouju X., Abel M., Calmettes B., Porte L.- Properties of Penta-tert-Butylcorannulene Molecules Inserted in Phthalocyanine.Networks studied by Low Temperature Scanning Tunnelling Microscopy.- Journal of Physical Chemistry C, vol. 113, p. 21169-76,2009 - http://dx.doi.org/10.1021/jp906905h

Couzinié J.P., Hardouin-Duparc O., Lartigue-Korinek S., Thibault-Penisson J., Décamps B., Priester L.- On atomic structure of an asymmetrical near S=27 grain boundary in copper.- Philosophical Magazine Letters, vol. 89, p. 757-767, 2009

Diaz A., Mocuta C., Stangl J., Mandl B., David C., Vila-Comamala J., Chamard V., Metzger T. et Bauer G.- Coherent diffraction imaging of a single epitaxial InAs nano wire using a focused x-ray beam.- Physical Review B, vol.79, p.125324, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.125324

Dolocan V., Dolocan A., Dolocan V. O.- A hamiltonian for the boson-boson interaction based on elastic coupling through flux lines.- Modern Physics Letters B, vol. 23, n° 10, p.1263-1272, 2009 - http://dx.doi.org/10.1142/S0217984909019491

Dubois S., Martinuzzi S., Enjalbert N.- Is impurity gettering or passivation by hydrogen the key of the improvement of mc-Si  cells ?.- Materials Science and Engineering: B, vol. 159-160, p. 239-241, 2009

Duché D., Torchio Ph., Escoubas L., Monestier F., Simon J.J., Flory F., Mathian G.- Improving Light Absorption in Organic Solar Cells by Plasmonic Contribution.- Solar Energy Materials and Solar Cells, vol. 93, p. 1377-1382, 2009

Ducousso T., Guérin R., Debierre J. M.- Phase-field study of free growth in a channel: from thermal to chemical solidification.- European Physical Journal B, vol. 70, p. 363-367, 2009 - doi: 10.1140/epjb/e2009-00241-1

Dumont M, Coulet V, Regula G, Bley F.- Characterization of nanocavities in silicon using small angle X-Ray scattering.- Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II., Materials Research Society, p. 119-24, 2009

Dumont M., Coulet M-V., Bley F., Regula G.- Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering.- Materials Science and Engineering B, vol. 162, n° 2, p. 135-142, May 2009  - http://dx.doi.org/10.1016/j.mseb.2009.03.019

Erdélyi Z., Girardeaux C., Beke D.L., Bernardini J., Portavoce A., Katona1 G.L., Balogh Z., Rolland A.- Thin film dissolution into semi-infinite substrates: surprising interface kinetics and dissolution modes.- Defect and Diffusion Forum, vol. 289-292, p. 573, 2009

Escoubas S., Brillet H., Mesarotti T., Raymond G., Thomas O., Morin P.- Local strains induced in silicon channel by a periodic array of nitride capped poly lines investigated by high-resolution X-ray diffraction.- Materials Science & Engineering B, vol. 154-155, p. 129-132, 2008

Escoubas S., Eberlein M., Rohr P. and Thomas O.- High-resolution X-ray diffraction as a tool to investigate the evolution of local stress in sub-micrometric Si lines isolated by periodic arrays of oxide-filled trenches.- Materials Science in Semiconductor Processing,  - vol. 12, Issues 1-2, p. 64-70, 2009 - http://dx.doi.org/10.1016/j.mssp.2009.07.007

Fiawoo M.-F., Bonnot A.-M., Jourdain V., Michel T., Picher M., Arenal R., Thibault-Penisson J., Loiseau A.- Substrate preparation techniques for direct investigation by TEM of single wall carbon nanotubes grown by chemical vapor deposition.- Surface Science, vol. 603, n° 8, p. 1115-1120, 2009

Gailhanou H., Rogez J., Van Miltenburg J.C., Van Genderer A.C.G., Greneche J.M., Gilles C. , Jalabert D., Michau N., Gaucher E.C.,  Blanc P.- Thermodynamic properties of chlorite CCa-2. Heat capacities, heat contents and entropies.- Geochimica Cosmochimica Acta,  vol. 73, 16, p. 4738-4749, 2009

Gambardella P., Stepanow S., Dmitriev A., Honolka J., de Groot F., Lingenfelder M., Sen Gupta S., Sarma D.D., Bencok P., Stanescu S., Clair S., Pons S., Lin N., Seitsonen A. P., Brune H., Barth J.V., Kern K.- Supramolecular control of the magnetic anisotropy in two-dimensional high-spin Fe arrays at a metal interface.- Nature Materials, vol. 8, p. 189, 2009 - http://dx.doi.org/10.1038/NMAT2376

Gourbilleau, F; Ternon, C; Maestre, D, Palais, O ; Dufour C.- Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell.- Journal of  Applied Physics, vol. 106, n° 1, p. 013501, 2009

Groll N., Bertaina S., Pati M., Dalal N.S., Chiorescu I.- Entrapment of magnetic microcrystals for on-chip electron spin resonance studies.- Journal of Applied  Physics, vol. 106, p. 046106, 2009 - http://dx.doi.org/10.1063/1.3207774

Guerin C., Huard V., Bravaix A.- General Framework about defect creation at the Si/SiO2 interface.- Journal of Applied Physics, Vol. 105(11), p. 114513-114524, 2009 - http://dx.doi.org/10.1063/1.3133096

Hassam S., Boa D., Fouque Y., Kotchi K.P., Rogez J.- Thermodynamic investigation of the Pb-Sb system.- Journal of Alloys and Compounds, vol. 476, 74-78, 2009

Hoummada K., C. Perrin, D. Mangelinck.- Effect of Pt addition on Ni silicide at low temperature: Growth, redistribution and solubility.- Journal of Applied Physics, vol. 106, p. 063511, 2009 - http://dx.doi.org/10.1063/1.3204948

Ille A., Stadler W., Pompl T., Gossner H., Brodbeck T., Esmark K., Riess P., Alvarez D., Chatty K., Gauthier R., Bravaix A.- Reliability aspects of gate oxide under ESD pulse stress.- Microelectronics Reliability, 49, 12, 1407-1416, 2009   

Jung H., Mangelinck-Noël N., Bergman C., Billia B.- Determination of the nucleation undercooling of Al-5.0wt%Ti-1.0wt%B refining particles in Al-based alloys using DSC.- Journal of Alloys and Compounds, vol. 477, p. 622-627, 2009 - http://dx.doi.org/10.1016/j.jallcom.2008.10.109

Jung H., Mangelinck-Noël N., Nguyen-Thi H., Bergeon N., Billia B., Buffet A., Reinhart G., Schenk T.,  Baruchel J.- Fragmentation in Al-7wt%Si alloy studied in real-time by X-ray synchrotron techniques.- International Journal of Cast Metal Research, vol. 22, n° 1-4, p. 208-211, 2009

Jung H., Mangelinck-Noël N., Nguyen-Thi H., Billia B.- Columnar to Equaixed Transition during Directional Solidification in Refined Al – based alloys.- Journal of Alloys and Compounds, vol. 484, p. 739-746, 2009

Kammouni A., W. Saikaly, M. Dumont, C. Marteau, X. Bano, A. Charaï.- Effect of the bainitic transformation temperature on retained austenite fraction  and stability in Ti microalloyed TRIP steels.- Materials Science and Engineering A, vol. 518, n° 1-2, p. 89-96, August 2009 - http://dx.doi.org/10.1016/j.msea.2009.05.015

Katcho N.A., M.I. Richard, O. Landré, G. Tourbot, M.G. Proietti, H. Renevier, V. Favre-Nicolin, B. Daudin, G. Chen, J.J. Zhang and G. Bauer.- Structural properties of Ge/Si(001) nano-islands and AlGaN nanowires by Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction.- Journal of Physics: Conference Series, 190, 012129, 2009

Katcho N.A., M.I. Richard, O. Landré, G. Tourbot, M.G. Proietti, H. Renevier, V. Favre-Nicolin, B. Daudin, G. Chen, J.J. Zhang, Z. Zhong, M. Stoffel, O. Schmidt, G. Renaud, T. U. Schülli and G. Bauer.- Combining spectroscopy and simulations to probe the structural properties of Ge/Si(001) nano-islands, ESRF highlights, 2009 -

Kondakova I.V., Kuzian R.O., Raymond L. Hayn R., Laguta V.V.- Evidence for impurity-induced polar state in Sr1-xMnxTiO3 from density functional calculations.- Physical Review B,  - vol. 79, p. 134117, 2009 - doi: 10.1103/PhysRevB.79.134117

Kononchuk O., Monier V., Capello L., Pichaud B.- Characterization of crystalline defects in silicon for SOI applications by means of lignt scattering tomography.- Physica Status Solidi (c), vol. 6, 1935-1941, 2009

Kuz'min M., Hayn R., Oison V.- Ab initio calculated XANES and XMCD spectra od Fe(II) phthalocyanine.- Physical Review B, vol. 79, p. 024413, 2009

Labidi A., Gaidi M., Guerin J., Béjaoui A., Marref M., Aguir K.- Alternating current investigation and modeling of the temperature and ozone effects on the grains and the grain boundaries contributions to the WO3 sensor responses.- Thin Solid Films, vol.  518, p. 355–361, 2009

Lalmi B, Girardeaux C., Portavoce A., Bernardini J., Aufray B.- Growth and dissolution kinetics of ultra thin silicon films on Cu(100).- Journal of Nanoscience and Nanotechnology, vol. 9, n° 7, p. 4311, 2009 - http://dx.doi.org/10.1166/jnn.2009.M51

Lalmi B., Girardeaux C., Portavoce A., Bernardini J., Aufray B.- Unusual behaviour of the dissolutions kinetics of one monolayer of Si in Cu(001).- Defect and Diffusion Forum, vol. 289-292, p. 601, 2009

Lancin M., Texier M., Regula G., Pichaud  B.- Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores.- Philosophical Magazine, vol. 89, n° 15, p. 1251, 2009 - http://dx.doi.org/10.1080/14786430902919497

Lasagni F., M. Dumont, C. Salamida, J.A. Acuña, H.P. Degischer.- Dilatometry revealing Si precipitation in AlSi-alloys.- International Journal of Materials Science (formerly Z. für Metallkunde), vol. 100, n° 7, p.1, 2009 - http://dx.doi.org/10.3139/146.110145

Lelievre, JF; Fourmond, E; Kaminski, A, Palais, O ; Ballutaud, D ; Lemiti M.- Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon.- Solar Energy Materials & Solar Cells, vol. 93, 8, 1281-1289, 2009

Leroy F, Karashanova D, Dufay M, Debierre J-M, Frisch T et Muller P.- Step bunching to step-meandering transition induced by electromigration on Si(111) vicinal surface.- Surface Science, vol.  603,  p. 507-512, 2009

Li C., M. Bescond and M. Lannoo.- A GW investigation of interface induced correlation effects on transport properties in realistic nanoscale structures.- Physical Review B, vol. 80, 195318, 2009 - http://dx.doi.org/10.1103/PhysRevB.80.195318

Loussier X., Munteanu D., Autran J.L.- Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics.- Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1185-1188.- http://dx.doi.org/10.1016/j.jnoncrysol.2009.02.011

Mangelinck D., Hoummada K., Blum I.- Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si.- Applied Physics Letters, vol. 95, p. 181902, 2009 - http://dx.doi.org/10.1063/1.3257732

Marfaing J., Bois J.-J, Blancon R., Pozzo di Borgo E., Waysand G., Gaffet S., Yedlin M., Barroy P., Auguste M., Boyer D. and Cavaillou A.- About the world-wide magnetic-background noise in the millihertz frequency range.- EuroPhysics Letters, vol. 88, p. 19002, 2009 - http://dx.doi.org/10.1209/0295-5075/88/19002

Martinie S., Munteanu D., Le Carval G., Autran J.L.- Analytical modeling and performance analysis of Double-Gate MOSFET-based circuit including ballistic/quasi-ballistic effects.- Molecular Simulation, 2009, Vol. 35, N°8, p. 631-637.- http://dx.doi.org/10.1080/08927020902769836

Martinie S., Munteanu D., Le Carval G., Autran J.L.- Physics-based analytical modeling of quasi-ballistic transport in Double-Gate MOSFETs: from device to circuit operation.- IEEE Transactions on Electron Devices, 2009, vol. 56, no. 11, p. 2692-2702.- http://dx.doi.org/10.1109/TED.2009.2030540

Martinuzzi S., Dubois S., Warchol F., Enjalbert N.- Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafers.- Materials Science and Engineering: B, vol. 159-160, p. 253-255, 2009

Martinuzzi S., Perichaud I., Trassy C., Degoulange J.- N type multicrystalline silicon wafers prepared from plasma torch refined upgraded metallurgical feedstock.- Progress in Photovoltaics : Research and Applications, vol. 17, p. 297-305, 2009

Merlen A., Gadenne V., Romann J., Chevallier V., Patrone L., Valmalette J.C.- Surface enhanced Raman spectroscopy of organic molecules deposited on gold sputtered substrates.- Nanotechnology, vol. 20, Issue 21, p 215705, 2009 - http://dx.doi.org/10.1088/0957-4484/20/21/215705

Merlen A., Toulemonde P., Le Floch S., Montagnac G., Hammouda T., Marty O., San Miguel A.- High pressure-high temperature synthesis of diamond from single-wall pristine and iodine doped carbon nanotube bundles.- Carbon, vol. 47,1643, 2009 - http://dx.doi.org/10.1016/j.carbon.2009.02.014

Merlen A., Valmalette J. C., Gucciardi P.G., Lamy de la Chapelle M., Frigout A., Ossikovski R.- Depolarization effects in Tip Enhanced Raman Spectroscopy.- Journal of Raman Spectroscopy, Invited paper vol. 40, p. 1361–1370, Special Issue 2009 - http://dx.doi.org/10.1002/jrs.2424

Michelini F., Cavassilas N., Hayn R., Szczap M.- Multiband k.p models for strained zincblende cristals: Application to the fine structure of ZnO.- Physical Review B, vol.  80, p. 245210, 2009 - doi: 10.1103/PhysRevB.80.245210

Moliere F., Foucher B., Perdu P., Bravaix A.- Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics, Microelectronics Reliability, 2009, Vol. 49(9-11), p. 1381–1385.- http://dx.doi.org/10.1016/j.microrel.2009.07.001

Moreau M., Munteanu D., Autran J.L.- Simulation of Gate Tunneling Current in Metal-Insulator-Metal Capacitor with Multi layer High-k Dielectric Stack using the Non-equilibrium Green’s Function Formalism.- Japanese Journal of Applied Physics, 2009, vol. 48, 111409: 1-8.- http://dx.doi.org/10.1143/JJAP.48.111409

Moreau M., Munteanu D., Autran J.L., Bellenger F., Mitard J., Houssa M.- Investigation of capacitance–voltage characteristics in Ge /high-κ MOS devices.- Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1171-1175.- http://dx.doi.org/10.1016/j.jnoncrysol.2009.01.056

Munteanu D., Autran J.L.- 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates.- IEEE Transactions on Nuclear Science, 2009, Volume 56, N°4, p. 2083-2090.- http://dx.doi.org/10.1109/TNS.2009.2016343

Munteanu D., Autran J.L.- Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study.- IEEE Transactions on Nuclear Science, 2009, Volume 56, N°4, p. 2042-2049.- http://dx.doi.org/10.1109/TNS.2009.2016564

Munteanu D., Autran J.L., Moreau M., Houssa M.- Electron transport through high-κ dielectric barriers: A non-equilibrium Green’s function (NEGF) study.- Journal of Non-Crystalline Solids, 2009, Volume 355, N°18-21, p. 1180-1184.- http://dx.doi.org/10.1016/j.jnoncrysol.2009.03.006

Munteanu D., Moreau M., Autran J.L.- A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs.- Molecular Simulation, 2009, Vol. 35, N°8, p. 491-497.- http://dx.doi.org/10.1080/08927020902801548

Ngo V.G., Bressy Ch., Leroux Ch., Margaillan A.- Synthesis of hybrid TiO2 nanoparticles with well defined poly(methylacrylate) and poly(tert-butyldimethylsylil methacrylate) via the RATF process.- Polymer, vol. 50 , p. 3095-3102, 2009 - http://dx.doi.org/10.1016/j.polymer.2009.04.077

Noeppel A., Budenkova O., Zimmermann G., Sturz L., Mangelinck-Noël N., Jung H., Nguyen-Thi H., Billia B., Gandin Ch-A., Fautrelle Y.- Numerical modeling of columnar to equiaxed transition –  application to microgravity experiments.- International Journal of Cast Metal Research, vol. 22, n° 1-4, p. 34-38, 2009

Nony L., A.S. Foster, F. Bocquet and Ch. Loppacher.- Understanding the atomic-scale contrast in Kelvin probe force microscopy.- Physical Review Letters, vol.  103, p. 036802, 2009

Nony L., F. Bocquet, Ch. Loppacher and Th. Glatzel.- On the relevance of the atomic-scale contact potential difference by amplitude-modulation and frequency-modulation Kelvin probe force microscopy - Nanotechnology, vol. 20, p. 264014, 2009

Otjacques C., Raty J.-Y., Gaspard, J.-P., Coulet M.-V., Johnson M., Schober H., Bichara C.- Dynamics of the Negative Thermal Expansion in Tellurium based liquid alloys.- Physical Review Letters, 103, 24, 245901, 2009

Panaccione G., Vobornik I., Fujii J., Krizmancic D., Annese E., Giovanelli L., Maccherozzi F.,  Salvador F., De Luisa A., Benedetti D., Gruden A., Bertoch P., Polack F., Cocco D., Sostero G., Diviacco B., Hochstrasser M., Maier U., Pescia D., Back C. H., Greber T., Osterwalder J., Galaktionov M., Sancrotti M., and Rossi G.- Advanced photoelectric effect experiment beamline at Elettra: A surface science laboratory coupled with Synchrotron Radiation.- Review of Scientific Instruments, vol. 80, n°4, p. 043105, 2009 - http://dx.doi.org/10.1063/1.3119364

Pawlak R., Clair S., Oison V., Abel M., Ourdjini O., Zwaneveld N.A.A., Gigmes D., Bertin D., Nony L. and Porte L.- Robust Supramolecular Network on Ag(111): Hydrogen-Bond Enhancement through Partial Alcohol Dehydrogenation.- ChemPhysChem, vol.10, p. 1032-5, 2009 - http://dx.doi.org/10.1002/cphc.200900055

Perichaud I., Martinuzzi S., Degoulange J., Trassy C.- Limiting factors of gettering treatments in mc-Si wafers from the metallurgical route.- Materials Science and Engineering: B, vol. 159-160, p. 256-258, 2009

Pichaud B., Burle N., Texier M., Alfonso C., Gailhanou M., Thibault-Penisson J., Fontaine C., Vdovin V.I.- Dislocation nucleation in heteroepitaxial semiconducting films.- Physica Status Solidi (c), vol. 6, 1827-1835 , 2009 - http://dx.doi.org/10.1002/pssc.200881469

Pons N., N. Cavassilas, F. Michelini, L. Raymond and M. Bescond.- New shaped nanowire MOSFETs with enhanced current characteristics based on three-dimensional modeling.- Journal of Applied Physics, vol. 106, 053711, 2009 - http://dx.doi.org/10.1063/1.3204550

Pons N., N. Cavassilas, F. Michelini, L. Raymond, and M. Bescond.- Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modelling.- Journal of Applied Physics, vol. 106, p. 053711, 2009 - doi: 10.1063/1.3204550

Portavoce A., Lalmi B., Tréglia G., Girardeaux C., Mangelinck D., Aufray B., Bernardini J.- Subnanometric Si film reactive diffusion on Ni.- Applied Physics Letters, vol. 95, p. 023111, 2009 - http://dx.doi.org/10.1063/1.3177187

Portavoce A., Mangelinck D., Simola R., Daineche R., Bernardini J.- - Atom redistribution during co-doped amorphous silicon crystallization.- Defect and Diffusion Forum, vol. 289-292, p. 329, 2009

Portavoce A., Rodriguez N., Daineche R., Grosjean C., Girardeaux C.- Correction of secondary ion mass spectrometry profiles for atom diffusion measurements.- Materials Letters, vol. 63, p. 676, 2009 - http://dx.doi.org/10.1016/j.matlet.2008.12.018

Postel-Pellerin J., Lalande F., Canet P., Bouchakour R., Jeuland F., Bertello B., Villard B.- Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories.- Microelectronics Reliability, vol. 49, no. 9-11, p. 1056-1059, 2009 - http://dx.doi.org/10.1016/j.microrel.2009.06.020

Postel-Pellerin J., Lalande F., Canet P., Bouchakour R., Jeuland F., Morancho L.- Modeling charge variation during data retention of MLC Flash memories.- Microelectronics Reliability, vol. 49, n° 9-11, p. 1060-1063, 2009 - http://dx.doi.org/10.1016/j.microrel.2009.06.034

Raguet J-R., Calenzo P., Laffont R., Deleruyelle D., Bouchakour R., Bidal V., Regnier A., Niel S., Fornara P., Mirabel J-M.- A Dual-Gate Memory Cell with Two Inter-Poly Oxides.- Japanese Journal of Applied Physics, vol. 48, n° 4, p. 04C058-1–04C058-5, 2009 - http://dx.doi.org/10.1143/JJAP.48.04C058

Raissi M, Regula G, Belgacem CH, Coudreau C, Nitsche S, Lancin M, Hollander B, Robert F, Fnaiech M, Ntsoenzok E, Lazzari J-L.- Nanocavity buffer induced by gas ion implantation in silicon substrate for strain relaxation of heteroepitaxial Si1-xGex/Si thin layers.- Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, Materials Research Society, p. 143-8, 2009

Rakhmatullin R. M., Kurkin I. N., Mamin G. V., Orlinskii S. B., Gafurov M. R., Baibekov E. I., Malkin B. Z., Gambarelli, S., Bertaina, S., Barbara, B.- Coherent spin manipulations in Yb 3+:CaWO4 at X- and W-band EPR frequencies.- Physical  Review B, vol. 79,  p. 172408-4, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.172408

Remy L., Coll P., Picot F., Mico P., Portal J-M.- Study of the Metal Filling Impact on Standard Cells and their Associated Interconnects Using Ring Oscillators : Definition of the Metal Fill Corner Concept.- Analog Integrated Circuits and Signal Processing, vol. 4, n° 1, p. 13-19, 2009

Richard M.-I., Favre-Nicolin V., Renaud G., Schülli T. U., Priester C., Zhong Z., Metzger T.-H.- Multiple Scattering effects in strain and composition analysis of nanoislands by grazing incidence x-rays.- Applied Physics Letters, vol. 94, p. 013112, 2009 - http://dx.doi.org/10.1063/1.3064157

Richard M.-I., N.A. Katcho, M.G. Proietti, H. Renevier, V. Favre-Nicolin, Z. Zhong, G. Chen, M. Stoffel, O. Schmidt, G. Renaud, T. U. Schülli, and G. Bauer.- Structural properties of Ge/Si(001) Nano-Islands by  Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction.-  European Physical Journal Special Topics,  167, 3, 2009

Richard M.-I., Schülli T.U., Renaud G., Wintersberger E., Chen G., Bauer G., Holy V.- In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes.- Physical Review B, vol. 80, p. 045313, 2009 - http://dx.doi.org/10.1103/PhysRevB.80.045313

Roca M., Laffont R., Micolau G., Lalande F., Pizzuto O.- A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories.- Microelectronics Reliability, vol. 49, n° 9-11, p. 1070-1073, 2009 - http://dx.doi.org/10.1016/j.microrel.2009.06.036

Rogez J., Le Coze J.- Mesures de températures : Questions à se poser avant la mesure.- Techniques de l'Ingénieur, vol.  R251, 2009

Romann J., Chevallier V., Merlen A., Valmalette J.C.- Self-organized assembly of copper oxalate nanocrystals.- Journal of Physical Chemistry C, vol. 113,  Issue: 13 p.5068-5074, 2009 - http://dx.doi.org/10.1021/jp805335f

Roussel JM, Labat S, Thomas O.- Relation between strain and composition in coherent epitaxial Cu/Ni multilayers:  Influence of strong concentration gradients.- Physical Review B, vol. 79, p. 014111, 2009 - http://dx.doi.org/10.1103/PhysRevB.79.014111

Rowell NL, Lockwood DJ, Berbezier I, Szkutnik PD, Ronda A.- Photoluminescence Efficiency of Self-Assembled Ge Nanocrystals.- Journal of the Electrochemical Society, 156, H913, 2009

Saidi D., B. Zaid, N. Boutarek, N. Bacha, A. Si Ahmed, J. P. Bibérian.- Qualitative evaluation of the germination frequency in Zr-Fe binary alloy.- Measurement, vol. 43, n° 2, p. 204-209, 2009 - http://dx.doi.org/10.1016/j.measurement.2009.09.003

Sassi M., Oison V., Debierre J. M., Humbel S.- Modelling of the two-dimensional polymerization of 1,4-benzene diboronic acid on a Ag surface.- ChemPhysChem., vol. 10, p. 840-2845, 2009 - doi: 10.1002/cphc.200900168

Savoyant A. Stepanov A., Kuzian R., Deparis C., Morhain C., Grasza K.- Single-ion anisotropy in Mn-doped diluted magnetic semiconductors.- Physical Review B, vol. 80, p. 115203,  2009 - http://dx.doi.org/10.1103/PhysRevB.80.115203

Schülli T.U., Vastola G., Richard M.-I., Malachias A., Renaud G., Uhlik F., Montalenti F., Chen G., Miglio L., Schäffler F., and Bauer G.- Enhanced Relaxation and Intermixing in Ge islands Grown on Pit-Patterned Si(001) Substrates.- Physical Review Letters, vol. 102, p.025502, 2009 - http://dx.doi.org/10.1016/j.susc.2008.04.024

Shin H.-J., Clair S., Kim Y., Kawai M.- Substrate-induced arrays of quantum dots in a single-walled carbon nanotube.- Nature Nanotechnology, vol. 4, p. 567, 2009 - http://dx.doi.org/10.1038/nnano.2009.182

Telandro V., Kussener E., Barthélemy H., Malherbe A.- A Bi-Channel voltage Regulator Protecting Smart Cards Against Power Analysis Attacks .- Analog Integrated Circuit and Signal Processing Journal (AICSP),  - p. 275 - 285, 2009 - http://dx.doi.org/10.1007/s10470-008-9260-z

Variola F., Vetrone F., Richert L., Jedrzejowski P., Yi J.H., Zalzal S., Clair S., Sarkissian A., Perepichka D. F., Wuest J.D., Rosei F., Nanci A.- Improving biocompatibility of implantable metals by nanoscale modification of surfaces: an overview of strategies, fabrication methods and challenges.- Small, vol. 5, p. 996, 2009 - http://dx.doi.org/10.1002/smll.200801186

Verga A.- Anisotropic dynamics of a vicinal surface under the meandering step instability.- Physical Review B,  - Vol. 80, p. 174115, 2009

Waysand G., Barroy P., Blancon R., Gaffet S., Guilpin C., Marfaing J., Pozzo Di Borgo E., Pyee M., Auguste M., Boyer D., Cavaillou, A.- Seismo-ionosphere detection by underground SQUID in low-noise environment in LSBB-Rustrel, France.- European Physical Journal-Applied Physics, vol. 47, p. 12705, 2009 - http://dx.doi.org/10.1051/epjap:2008186

Weiss C., Bergeon N. , Mangelinck-Noël N., Billia B.- Cellular pattern dynamics on a concave interface in three-dimensional directional solidification.- Physical Review E, vol. 79, p. 011605, 2009

Zaid L., Staraj R.- Cavity embedded gps antenna in gsm wire-patch radiating element.- Microwave and Optical Technology Letters, vol. 51, n° 8, p. 1896-1899, 2009


2010 (liste non exhaustive, source : WoS, janvier 2011)

Title Synthesis and microstructure of cobalt ferrite nanoparticles

Author(s) Ajroudi, L; Villain, S; Madigou, V; Mliki, N; Leroux, C

Source JOURNAL OF CRYSTAL GROWTH 312 (16-17):2465-2471 2010

ISSN 0022-0248

DOI 10.1016/j.jcrysgro.2010.05.024


Title Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces

Author(s) Al-Harthi, SH; Revathy, KP; Gard, F; Mesli, A; George, AK; Bartringer, J; Mamor, M; Unnikrishnan, NV

Source NANOSCALE RESEARCH LETTERS 5 (11):1737-1743 2010

DOI 10.1007/s11671-010-9703-1


Title Self-assembly of TiO2 nanoparticles on native oxide terminated silicon surfaces

Author(s) Al-Harthi, SH; Revathy, KP; George, AK; Elzain, ME; Al-Hinai, AT; Mesli, A; Unnikrishnan, NV

Source COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS 370 (1-3):20-27 2010

ISSN 0927-7757

DOI 10.1016/j.colsurfa.2010.08.037


Title HOLZ lines splitting on SiGe/Si relaxed samples: Analytical solutions for the kinematical equation

Author(s) Alfonso, C; Alexandre, L; Leroux, C; Jurczak, G; Saikaly, W; Charai, A; Thibault-Penisson, J

Source ULTRAMICROSCOPY 110 (4):285-296 2010

ISSN 0304-3991

DOI 10.1016/j.ultramic.2009.12.005


Title High-pressure behavior of polyiodides confined into single-walled carbon nanotubes: A Raman study

Author(s) Alvarez, L; Bantignies, JL; Le Parc, R; Aznar, R; Sauvajol, JL; Merlen, A; Machon, D; Miguel, A

Source PHYSICAL REVIEW B 82 (20): Art No. 205403 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.82.205403


Title Aluminum and vacancies in alpha-iron: Dissolution, diffusion, and clustering

Author(s) Amara, H; Fu, CC; Soisson, F; Maugis, P

Source PHYSICAL REVIEW B 81 (17): Art No. 174101 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.81.174101


Title Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

Author(s) Autran, JL; Munteanu, D; Roche, P; Gasiot, G; Martinie, S; Uznanski, S; Sauze, S; Semikh, S; Yakushev, E; Rozov, S; Loaiza, P; Warot, G; Zampaolo, M

Source MICROELECTRONICS RELIABILITY 50 (9-11):1822-1831 2010

Conference Title 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Conference Date OCT 11-15, 2010

Conference Location Gaeta, ITALY

ISSN 0026-2714

DOI 10.1016/j.microrel.2010.07.033


Title Enthalpy of formation of the La-Mg intermediate phases

Author(s) Berche, A; Marinelli, F; Rogez, J; Record, MC

Source THERMOCHIMICA ACTA 499 (1-2):65-70 2010

ISSN 0040-6031

DOI 10.1016/j.tca.2009.11.003


Title Thermodynamic measurements in the Mg-Zn system

Author(s) Berche, A; Drescher, C; Rogez, J; Record, MC; Bruhne, S; Assmus, W

Source JOURNAL OF ALLOYS AND COMPOUNDS 503 (1):44-49 2010

ISSN 0925-8388

DOI 10.1016/j.jallcom.2010.05.001


Title Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors

Author(s) Bescond, M; Lannoo, M; Raymond, L; Michelini, F

Source JOURNAL OF APPLIED PHYSICS 107 (9): Art No. 093703 2010

ISSN 0021-8979

DOI 10.1063/1.3399999


Title B diffusion in implanted Ni2Si and NiSi layers

Author(s) Blum, I; Portavoce, A; Chow, L; Mangelinck, D; Hoummada, K; Tellouche, G; Carron, V

Source APPLIED PHYSICS LETTERS 96 (5): Art No. 054102 2010

ISSN 0003-6951

DOI 10.1063/1.3303988


Title Measurement of As diffusivity in Ni2Si thin films

Author(s) Blum, I; Portavoce, A; Mangelinck, D; Daineche, R; Hoummada, K; Labar, JL; Carron, V; Bernardini, J

Source MICROELECTRONIC ENGINEERING 87 (3):263-266 2010

Conference Title 18th European Workshop on Materials for Advanced Metallization

Conference Date MAR 08-11, 2009

Conference Location Grenoble, FRANCE

ISSN 0167-9317

DOI 10.1016/j.mee.2009.05.020


Title Application of synchrotron X-ray radiography to the study of dendritic equiaxed microstructure formation in Al-Cu alloys

Author(s) Bongo, A; Nguyen-Thi, H; Bergeon, N; Mangelinck-Noel, N; Schenk, T; Billia, B; Boller, E; Baruchel, J

Source NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268 (3-4):394-398 2010

Conference Title Spring Meeting of the European-Materials-Research-Society

Conference Date JUN 08-12, 2009

Conference Location Strasbourg, FRANCE

ISSN 0168-583X

DOI 10.1016/j.nimb.2009.09.011


Title First-principle calculation of the optical properties of zinc-blende Zn1-xCdxSySe1-y

Author(s) Boukortt, A; Berrah, S; Hayn, R; Zaoui, A

Source PHYSICA B-CONDENSED MATTER 405 (2):763-769 2010

ISSN 0921-4526

DOI 10.1016/j.physb.2009.09.102


Title Structural investigation of the Zn1-xCdxSb solid solution by density-functional theory approach

Author(s) Boulet, P; Record, MC

Source SOLID STATE SCIENCES 12 (1):26-32 2010

ISSN 1293-2558

DOI 10.1016/j.solidstatesciences.2009.09.018


Title A 9-pJ/Pulse 1.42-Vpp OOK CMOS UWB Pulse Generator for the 3.1-10.6-GHz FCC Band

Author(s) Bourdel, S; Bachelet, Y; Gaubert, J; Vauche, R; Fourquin, O; Dehaese, N; Barthelemy, H

Source IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 58 (1):65-73 2010

ISSN 0018-9480

DOI 10.1109/TMTT.2009.2035959


Title Electron spin resonance in three spin-1/2 dimer systems: VO(HPO4)center dot 0.5H(2)O, KZn(H2O)(VO)(2)(PO4)(2)(H2PO4), and CsV2O5

Author(s) Camara, IS; Gautier, R; Le Fur, E; Trombe, JC; Galy, J; Ghorayeb, AM; Stepanov, A

Source PHYSICAL REVIEW B 81 (18): Art No. 184433 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.81.184433


Title Photoresponse induced by Ge nanodots on SiO2/Si substrate

Author(s) Castrucci, P; Del Gobbo, S; Speiser, E; Scarselli, M; De Crescenzi, M; Amiard, G; Ronda, A; Berbezier, I

Source JOURNAL OF NON-CRYSTALLINE SOLIDS 356 (37-40):1940-1942 2010

Conference Title International Workshop on Functional and Nanostructured Materials (FNMA)/International Conference on Intermoleculat and Magnetic Interactions in Matter (IMIM)

Conference Date SEP 27-30, 2009

Conference Location L'Aquila, ITALY

ISSN 0022-3093

DOI 10.1016/j.jnoncrysol.2010.05.040


Title Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation

Author(s) Cavassilas, N; Pons, N; Michelini, F; Bescond, M

Source APPLIED PHYSICS LETTERS 96 (10): Art No. 102102 2010

ISSN 0003-6951

DOI 10.1063/1.3352558


Title Strain analysis by inversion of coherent Bragg X-ray diffraction intensity: the illumination problem

Author(s) Chamard, V; Dolle, M; Baldinozzi, G; Livet, F; de Boissieu, M; Labat, S; Picca, F; Mocuta, C; Donnadieu, P; Metzger, TH

Source JOURNAL OF MODERN OPTICS 57 (9):816-825 2010

ISSN 0950-0340

DOI 10.1080/09500341003746645


Title Three-dimensional x-ray Fourier transform holography: the Bragg case.

Author(s) Chamard, V; Stangl, J; Carbone, G; Diaz, A; Chen, G; Alfonso, C; Mocuta, C; Metzger, T H

Source Phys Rev Lett 104 (16):165501 2010

ISSN 1079-7114


Title Three-Dimensional X-Ray Fourier Transform Holography: The Bragg Case

Author(s) Chamard, V; Stangl, J; Carbone, G; Diaz, A; Chen, G; Alfonso, C; Mocuta, C; Metzger, TH

Source PHYSICAL REVIEW LETTERS 104 (16): Art No. 165501 2010

ISSN 0031-9007

DOI 10.1103/PhysRevLett.104.165501


Title Magnetic strong coupling in a spin-photon system and transition to classical regime

Author(s) Chiorescu, I; Groll, N; Bertaina, S; Mori, T; Miyashita, S

Source PHYSICAL REVIEW B 82 (2): Art No. 024413 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.82.024413


Title Mesoscopic Arrays from Supramolecular Self-Assembly

Author(s) Clair, S; Abel, M; Porte, L

Source ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 49 (44):8237-8239 2010

ISSN 1433-7851

DOI 10.1002/anie.201003335


Title Lattice instabilities in hexagonal NiSi: A NiAs prototype structure

Author(s) Connetable, D; Thomas, O

Source PHYSICAL REVIEW B 81 (7): Art No. 075213 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.81.075213


Title Dendritic Arm Spacing Affecting Mechanical Properties and Wear Behavior of Al-Sn and Al-Si Alloys Directionally Solidified under Unsteady-State Conditions

Author(s) Cruz, KS; Meza, ES; Fernandes, FAP; Quaresma, JMV; Casteletti, LC; Garcia, A

Source METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE 41A (4):972-984 2010

Conference Title Symposium on Mechanical Behavior of Nanostructured Materials held at the 2009 TMS Annual Meeting and Exhibition

Conference Date FEB 15-19, 2009

Conference Location San Francisco, CA

ISSN 1073-5623

DOI 10.1007/s11661-009-0161-2


Title Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

Author(s) Deleruyelle, D; Muller, C; Amouroux, J; Muller, R

Source APPLIED PHYSICS LETTERS 96 (26): Art No. 263504 2010

ISSN 0003-6951

DOI 10.1063/1.3458596


Title An RFID Tag Antenna Tolerant to Mounting on Materials

Author(s) Deleruyelle, T; Pannier, P; Egels, M; Bergeret, E

Source IEEE ANTENNAS AND PROPAGATION MAGAZINE 52 (4):14-19 2010

ISSN 1045-9243


Title MULTISTANDARD UHF AND UWB TAG ANTENNA FOR RFID AND POSITIONING APPLICATIONS

Author(s) Deleruyelle, T; Pannier, P; Egels, M; Bergeret, E

Source MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 52 (7):1597-1599 2010

ISSN 0895-2477

DOI 10.1002/mop.25285


Title Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures

Author(s) Demolliens, A; Muller, C; Mueller, R; Turquat, C; Goux, L; Deleruyelle, D; Wouters, DJ

Source JOURNAL OF CRYSTAL GROWTH 312 (22):3267-3275 2010

ISSN 0022-0248

DOI 10.1016/j.jcrysgro.2010.08.008


Title Imaging the displacement field within epitaxial nanostructures by coherent diffraction: a feasibility study

Author(s) Diaz, A; Chamard, V; Mocuta, C; Magalhaes-Paniago, R; Stangl, J; Carbone, D; Metzger, TH; Bauer, G

Source NEW JOURNAL OF PHYSICS 12 Art No. 035006 2010

ISSN 1367-2630

DOI 10.1088/1367-2630/12/3/035006


Title Investigation of solution-processed organic thin film transistors based on alpha,omega-hexyl-distyryl-bithiophene (DH-DS2T): growth and transport properties

Author(s) Didane, Y; Diallo, AK; Fiorido, T; Suzuki, A; Yoshimoto, N; Bernardini, S; Ackermann, J; Fages, F; Brisset, H; Bendahan, M; Aguir, K; Videlot-Ackermann, C

Source JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (7):1546-1551 2010

ISSN 1454-4164


Title Sand-castle biperiodic pattern for spectral and angular broadening of antireflective properties

Author(s) Escoubas, L; Bouffaron, R; Brissonneau, V; Simon, JJ; Berginc, G; Flory, F; Torchio, P

Source OPTICS LETTERS 35 (9):1455-1457 2010

ISSN 0146-9592


Title All solution processed flexible ammonia gas and light sensors based on alpha,omega-hexyl-distyrylbithiophene films

Author(s) Fiorido, T; Bendahan, M; Aguir, K; Bernardini, S; Martini, C; Brisset, H; Fages, F; Videlot-Ackermann, C; Ackermann, J

Source SENSORS AND ACTUATORS B-CHEMICAL 151 (1):77-82 2010

ISSN 0925-4005

DOI 10.1016/j.snb.2010.09.048


Title High-resolution nanostructural investigation of Zn4Sb3 alloys

Author(s) Gault, B; Marquis, EA; Saxey, DW; Hughes, GM; Mangelinck, D; Toberer, ES; Snyder, GJ

Source SCRIPTA MATERIALIA 63 (7):784-787 2010

ISSN 1359-6462

DOI 10.1016/j.scriptamat.2010.06.014


Title Valence band photoemission from the Zn-phthalocyanine/Ag(110) interface: Charge transfer and scattering of substrate photoelectrons

Author(s) Giovanelli, L; Amsalem, P; Angot, T; Petaccia, L; Gorovikov, S; Porte, L; Goldoni, A; Themlin, JM

Source PHYSICAL REVIEW B 82 (12): Art No. 125431 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.82.125431


Title Al-Fe hypoeutectic alloys directionally solidified under steady-state and unsteady-state conditions

Author(s) Goulart, PR; Spinelli, JE; Cheung, N; Mangelinck-Noel, N; Garcia, A

Source JOURNAL OF ALLOYS AND COMPOUNDS 504 (1):205-210 2010

ISSN 0925-8388

DOI 10.1016/j.jallcom.2010.05.089


Title Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Author(s) Goux, L; Lisoni, JG; Jurczak, M; Wouters, DJ; Courtade, L; Muller, C

Source JOURNAL OF APPLIED PHYSICS 107 (2): Art No. 024512 2010

ISSN 0021-8979

DOI 10.1063/1.3275426


Title Insights into solid phase epitaxy of ultrahighly doped silicon

Author(s) Gouye, A; Berbezier, I; Favre, L; Aouassa, M; Amiard, G; Ronda, A; Campidelli, Y; Halimaoui, A

Source JOURNAL OF APPLIED PHYSICS 108 (1): Art No. 013513 2010

ISSN 0021-8979

DOI 10.1063/1.3408556


Title Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

Author(s) Gouye, A; Berbezier, I; Favre, L; Amiard, G; Aouassa, M; Campidelli, Y; Halimaoui, A

Source APPLIED PHYSICS LETTERS 96 (6): Art No. 063102 2010

ISSN 0003-6951

DOI 10.1063/1.3298354


Title Critical assessment and optimization of the Ag-Au-Pb system

Author(s) Hassam, S; Boa, D; Benigni, P; Rogez, J

Source THERMOCHIMICA ACTA 510 (1-2):37-45 2010

ISSN 0040-6031

DOI 10.1016/j.tca.2010.06.020


Title Polarization Switching without Domain Formation at the Intrinsic Coercive Field in Ultrathin Ferroelectric PbTiO3

Author(s) Highland, MJ; Fister, TT; Richard, MI; Fong, DD; Fuoss, PH; Thompson, C; Eastman, JA; Streiffer, SK; Stephenson, GB

Source PHYSICAL REVIEW LETTERS 105 (16): Art No. 167601 2010

ISSN 0031-9007

DOI 10.1103/PhysRevLett.105.167601


Title Composition measurement of the Ni-silicide transient phase by atom probe tomography

Author(s) Hoummada, K; Blum, I; Mangelinck, D; Portavoce, A

Source APPLIED PHYSICS LETTERS 96 (26): Art No. 261904 2010

ISSN 0003-6951

DOI 10.1063/1.3457995


Title Nickel silicide encroachment formation and characterization

Author(s) Imbert, B; Pantel, R; Zoll, S; Gregoire, M; Beneyton, R; del Medico, S; Thomas, O

Source MICROELECTRONIC ENGINEERING 87 (3):245-248 2010

Conference Title 18th European Workshop on Materials for Advanced Metallization

Conference Date MAR 08-11, 2009

Conference Location Grenoble, FRANCE

ISSN 0167-9317

DOI 10.1016/j.mee.2009.06.003


Title Very-High-Energy Neutrinos: Detection and Estimation in the Mediterranean Sea

Author(s) Juennard, N; Jauffret, C; Xerri, B

Source IEEE JOURNAL OF OCEANIC ENGINEERING 35 (4):917-935 2010

ISSN 0364-9059

DOI 10.1109/JOE.2010.2048943


Title Study of Ferroelectric Bi3.25La0.75Ti3O12 Thin Films Deposited by Sol-Gel Method

Author(s) Khachane, M; Chevallier, V; Gavarri, JR; Muller, C; Turquat, C; Elaatmani, M; Zegzouti, A; Luk'yanchuk, IA

Source FERROELECTRICS 397112-121 2010

Conference Title 6th International Seminar on Ferroelastic Physics

Conference Date SEP 22-25, 2009

Conference Location Voronezh, RUSSIA

ISSN 0015-0193

DOI 10.1080/00150193.2010.484748


Title Mechanisms of magnetoelectricity in manganese-doped incipient ferroelectrics

Author(s) Kuzian, RO; Laguta, VV; Dare, AM; Kondakova, IV; Marysko, M; Raymond, L; Garmash, EP; Pavlikov, VN; Tkach, A; Vilarinho, PM; Hayn, R

Source EPL 92 (1): Art No. 17007 2010

ISSN 0295-5075

DOI 10.1209/0295-5075/92/17007


Title Epitaxial growth of a silicene sheet

Author(s) Lalmi, B; Oughaddou, H; Enriquez, H; Kara, A; Vizzini, S; Ealet, B; Aufray, B

Source APPLIED PHYSICS LETTERS 97 (22): Art No. 223109 2010

ISSN 0003-6951

DOI 10.1063/1.3524215


Title Structural and optoelectronical characterization of Si-SiO2/SiO2 multilayers with applications in all Si tandem solar cells

Author(s) Maestre, D; Palais, O; Barakel, D; Pasquinelli, M; Alfonso, C; Gourbilleau, F; De Laurentis, M; Irace, A

Source JOURNAL OF APPLIED PHYSICS 107 (6): Art No. 064321 2010

ISSN 0021-8979

DOI 10.1063/1.3309761


Title Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

Author(s) Mangelinck, D; Hoummada, K; Portavoce, A; Perrin, C; Daineche, R; Descoins, M; Larson, DJ; Clifton, PH

Source SCRIPTA MATERIALIA 62 (8):568-571 2010

ISSN 1359-6462

DOI 10.1016/j.scriptamat.2009.12.044


Title Surface Enhanced Spectroscopy of Organic Molecules Deposited on Nanostructured Gold Surfaces

Author(s) Merlen, A; Chevallier, V; Valmalette, JC; Lagugne-Labarthet, F; Harte, E

Editor(s) Champion, PM; Ziegler, LD

Source XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY 1267920-921 2010

Conference Title 22nd International Conference on Raman Spectroscopy

Conference Date AUG 08-13, 2010

Conference Location Boston, MA


Title Surface-Enhanced Raman and Fluorescence Spectroscopy of Dye Molecules Deposited on Nanostructured Gold Surfaces

Author(s) Merlen, A; Lagugne-Labarthet, F; Harte, E

Source JOURNAL OF PHYSICAL CHEMISTRY C 114 (30):12878-12884 2010

ISSN 1932-7447

DOI 10.1021/jp101576h


Title Light scattering from dislocations in silicon

Author(s) Monier, V; Capello, L; Kononchuk, O; Pichaud, B

Source JOURNAL OF APPLIED PHYSICS 108 (9): Art No. 093525 2010

ISSN 0021-8979

DOI 10.1063/1.3506521


Title Supramolecular Structures and Chirality in Dithiocarbamate Self-Assembled Monolayers on Au(111)

Author(s) Morf, P; Ballav, N; Putero, M; von Wrochem, F; Wessels, JM; Jung, TA

Source JOURNAL OF PHYSICAL CHEMISTRY LETTERS 1 (5):813-816 2010

DOI 10.1021/jz900435w


Title Optical and nuclear characterization of Xe-induced nanoporosity in SiO2

Author(s) Naas, A; De Sousa-Meneses, D; Hakim, B; Regula, G; Beaufort, MF; Belaidi, A; Ntsoenzok, E

Source THIN SOLID FILMS 518 (16):4721-4725 2010

Conference Title Symposium on Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II held at the 2009 Spring EMRS Meeting

Conference Date JUN 08-12, 2009

Conference Location Strasbourg, FRANCE

ISSN 0040-6090

DOI 10.1016/j.tsf.2009.12.068


Title RuO2 thin films deposited by spin coating on silicon substrates: pH-dependence of the microstructure and catalytic properties

Author(s) Nowakowski, P; Kopia, A; Villain, S; Fremy, MA; Kusinski, J; Gavarri, JR

Source JOURNAL OF MICROSCOPY-OXFORD 237 (3):246-252 2010

Conference Title 13th International Conference on Electron Microscopy

Conference Date JUN 08-11, 2008

Conference Location Zakopane, POLAND

ISSN 0022-2720

DOI 10.1111/j.1365-2818.2009.03236.x


Title Microstructure and electrical properties of RuO2-CeO2 composite thin films

Author(s) Nowakowski, P; Villain, S; Aguir, K; Guerin, J; Kopia, A; Kusinski, J; Guinneton, F; Gavarri, JR

Source THIN SOLID FILMS 518 (10):2801-2807 2010

ISSN 0040-6090

DOI 10.1016/j.tsf.2009.08.034


Title Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on AI-Implanted 4H-SiC Epitaxial Samples

Author(s) Ottaviani, L; Biondo, S; Morata, S; Palais, O; Sauvage, T; Torregrosa, F

Editor(s) Bauer, AJ; Friedrichs, P; Krieger, M; Pensl, G; Rupp, R; Seyller, T

Source SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 645-648717-720 2010

Conference Title 13th International Conference on Silicon Carbide and Related Materials

Conference Date OCT 11-16, 2009

Conference Location Nurnberg, GERMANY

DOI 10.4028/www.scientific.net/MSF.645-648.717


Title End-of-range defects in germanium and their role in boron deactivation

Author(s) Panciera, F; Fazzini, PF; Collet, M; Boucher, J; Bedel, E; Cristiano, F

Source APPLIED PHYSICS LETTERS 97 (1): Art No. 012105 2010

ISSN 0003-6951

DOI 10.1063/1.3456537


Title Role of S-Au labile bonding in stochastic switching of molecular conductance studied by STM

Author(s) Patrone, L; Soullier, J; Martin, P

Source PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 (8):1867-1870 2010

Conference Title Trends in Nanotechnology (TNT2009)

Conference Date SEP 07-11, 2009

Conference Location Barcelona, SPAIN

ISSN 0370-1972

DOI 10.1002/pssb.200983829


Title Single and Binary Self-Assembled Mono layers of Phenyl- and Pentafluorophenyl-Based Silane Species, and Their Phase Separation with Octadecyltrichlorosilane

Author(s) Patrone, L; Gadenne, V; Desbief, S

Source LANGMUIR 26 (22):17111-17118 2010

ISSN 0743-7463

DOI 10.1021/la102742e


Title Supramolecular Assemblies of 1,4-Benzene Diboronic Acid on KCl(001)

Author(s) Pawlak, R; Nony, L; Bocquet, F; Olson, V; Sassi, M; Debierre, JM; Loppacher, C; Porte, L

Source JOURNAL OF PHYSICAL CHEMISTRY C 114 (20):9290-9295 2010

ISSN 1932-7447

DOI 10.1021/jp102044u


Title X-ray microbeam strain investigation on Cu-MEMS structures

Author(s) Perroud, O; Vayrette, R; Rivero, C; Thomas, O; Micha, JS; Ulrich, O

Source MICROELECTRONIC ENGINEERING 87 (3):394-397 2010

Conference Title 18th European Workshop on Materials for Advanced Metallization

Conference Date MAR 08-11, 2009

Conference Location Grenoble, FRANCE

ISSN 0167-9317

DOI 10.1016/j.mee.2009.05.030


Title EEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

Author(s) Plantier, J; Aziza, H; Portal, JM; Reliaud, C; Regnier, A; Ogier, JL

Source ELECTRONICS LETTERS 46 (23):1568-1569 2010

ISSN 0013-5194

DOI 10.1049/el.2010.1894


Title Triple-junction contribution to diffusion in nanocrystalline Si

Author(s) Portavoce, A; Chow, L; Bernardini, J

Source APPLIED PHYSICS LETTERS 96 (21): Art No. 214102 2010

ISSN 0003-6951

DOI 10.1063/1.3435476


Title Physical origin of thickness-controlled sequential phase formation during reactive diffusion: Atomistic modeling

Author(s) Portavoce, A; Treglia, G

Source PHYSICAL REVIEW B 82 (20): Art No. 205431 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.82.205431


Title Leakage paths identification in NVM using biased data retention

Author(s) Postel-Pellerin, J; Laffont, R; Micolau, G; Lalande, F; Regnier, A; Bouteille, B

Source MICROELECTRONICS RELIABILITY 50 (9-11):1474-1478 2010

Conference Title 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Conference Date OCT 11-15, 2010

Conference Location Gaeta, ITALY

ISSN 0026-2714

DOI 10.1016/j.microrel.2010.07.074


Title Finite element simulations of coherent diffraction in elastoplastic polycrystalline aggregates

Author(s) Proudhon, H; Vaxelaire, N; Labat, S; Forest, S; Thomas, O

Source COMPTES RENDUS PHYSIQUE 11 (3-4):293-303 2010

ISSN 1631-0705

DOI 10.1016/j.crhy.2010.07.009


Title Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

Author(s) Puget, S; Bossu, G; Masson, P; Mazoyer, P; Ranica, R; Villaret, A; Lorenzini, P; Portal, JM; Rideau, D; Ghibaudo, G; Bouchakour, R; Jacquemod, G; Skotnicki, T

Source IEEE TRANSACTIONS ON ELECTRON DEVICES 57 (4):855-865 2010

ISSN 0018-9383

DOI 10.1109/TED.2010.2040937


Title First silicide formed by reaction of Ni(13%Pt) films with Si(100): Nature and kinetics by in-situ X-ray reflectivity and diffraction

Author(s) Putero, M; Ehouarne, L; Ziegler, E; Mangelinck, D

Source SCRIPTA MATERIALIA 63 (1):24-27 2010

ISSN 1359-6462

DOI 10.1016/j.scriptamat.2010.02.040


Title The effect of solute on ultrasonic grain refinement of magnesium alloys

Author(s) Qian, M; Ramirez, A; Das, A; StJohn, DH

Source JOURNAL OF CRYSTAL GROWTH 312 (15):2267-2272 2010

ISSN 0022-0248

DOI 10.1016/j.jcrysgro.2010.04.035


Title Interplay between structural, electronic, and magnetic degrees of freedom in Sr(3)Cr(2)O(8).

Author(s) Radtke, G; Saul, A; Dabkowska, H A; Luke, G M; Botton, G A

Source Phys Rev Lett 105 (3):036401 2010

ISSN 1079-7114


Title Interplay between Structural, Electronic, and Magnetic Degrees of Freedom in Sr3Cr2O8

Author(s) Radtke, G; Saul, A; Dabkowska, HA; Luke, GM; Botton, GA

Source PHYSICAL REVIEW LETTERS 105 (3): Art No. 036401 2010

ISSN 0031-9007

DOI 10.1103/PhysRevLett.105.036401


Title Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

Author(s) Ramdani, MR; Gil, E; Leroux, C; Andre, Y; Trassoudaine, A; Castelluci, D; Bideux, L; Monier, G; Robert-Goumet, C; Kupka, R

Source NANO LETTERS 10 (5):1836-1841 2010

ISSN 1530-6984

DOI 10.1021/nl100557d


Title Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

Author(s) Rezgui, B; Sibai, A; Nychyporuk, T; Lemiti, M; Bremond, G; Maestre, D; Palais, O

Source APPLIED PHYSICS LETTERS 96 (18): Art No. 183105 2010

ISSN 0003-6951

DOI 10.1063/1.3427386


Title In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

Author(s) Richard, MI; Highland, MJ; Fister, TT; Munkholm, A; Mei, J; Streiffer, SK; Thompson, C; Fuoss, PH; Stephenson, GB

Source APPLIED PHYSICS LETTERS 96 (5): Art No. 051911 2010

ISSN 0003-6951

DOI 10.1063/1.3293441


Title Arsenic and phosphorus codiffusion during silicon microelectronic processes

Author(s) Rodriguez, N; Portavoce, A; Delalleau, J; Grosjean, C; Serradeil, V; Girardeaux, C

Source THIN SOLID FILMS 518 (17):5022-5027 2010

ISSN 0040-6090

DOI 10.1016/j.tsf.2010.03.039


Title Structural changes and thermal properties of aluminium micro- and nano-powders

Author(s) Rufino, B; Coulet, MV; Bouchet, R; Isnard, O; Denoyel, R

Source ACTA MATERIALIA 58 (12):4224-4232 2010

ISSN 1359-6454

DOI 10.1016/j.actamat.2010.04.014


Title Sensor Self-Localization for Antenna Arrays Subject to Bending and Vibrations

Author(s) Santori, A; Barrere, J; Chabriel, G; Jauffret, C; Medynski, D

Source IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS 46 (2):884-898 2010

ISSN 0018-9251

DOI 10.1109/TAES.2010.5461663


Title Microstructural development during transient directional solidification of hypermonotectic Al-Bi alloys

Author(s) Silva, AP; Spinelli, JE; Mangelinck-Noel, N; Garcia, A

Source MATERIALS & DESIGN 31 (10):4584-4591 2010

ISSN 0264-1275

DOI 10.1016/j.matdes.2010.05.046


Title Nanophotonics for efficient photovoltaic solar cells

Author(s) Simon, JJ; Flory, F; Escoubas, L; Torchio, P; Chen, YJ; Duche, D

Source JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (1):31-34 2010

ISSN 1454-4164


Title Possible room-temperature ferromagnetism in K-doped SnO2: X-ray diffraction and high-resolution transmission electron microscopy study

Author(s) Srivastava, SK; Lejay, P; Barbara, B; Pailhes, S; Madigou, V; Bouzerar, G

Source PHYSICAL REVIEW B 82 (19): Art No. 93203 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.82.193203


Title Post Si(C)N hillock nucleation and growth in IC copper lines controlled by diffusional creep

Author(s) Timma, A; Caubet, P; Chenevier, B; Thomas, O; Kaouache, B; Dumas, L; Normandon, P; Giraudin, JC

Source MICROELECTRONIC ENGINEERING 87 (3):361-364 2010

Conference Title 18th European Workshop on Materials for Advanced Metallization

Conference Date MAR 08-11, 2009

Conference Location Grenoble, FRANCE

ISSN 0167-9317

DOI 10.1016/j.mee.2009.08.003


Title First-principles study of the stability of NbC and NbN precipitates under coherency strains in alpha-iron

Author(s) Tingaud, D; Maugis, P

Source COMPUTATIONAL MATERIALS SCIENCE 49 (1):60-63 2010

ISSN 0927-0256

DOI 10.1016/j.commatsci.2010.04.020


Title Femtosecond laser texturization for improvement of photovoltaic cells: Black Silicon

Author(s) Torres, R; Vervisch, V; Halbwax, M; Sarnet, T; Delaporte, P; Sentis, M; Ferreira, J; Barakel, D; Bastide, S; Torregrosa, F; Etienne, H; Roux, L

Source JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (3):621-625 2010

ISSN 1454-4164


Title Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Author(s) Uznanski, S; Gasiot, G; Roche, P; Tavernier, C; Autran, JL

Source IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57 (4):1876-1883 2010

Conference Title 10th European Conference on Radiation and Its Effects on Components and Systems (RADECS - 09)

Conference Date SEP 14-18, 2009

Conference Location Bruges, BELGIUM

ISSN 0018-9499

DOI 10.1109/TNS.2010.2051039


Title Structural changes in amorphous GeS2 at high pressure

Author(s) Vaccari, M; Garbarino, G; Aquilanti, G; Coulet, MV; Trapananti, A; Pascarelli, S; Hanfland, M; Stavrou, E; Raptis, C

Source PHYSICAL REVIEW B 81 (1): Art No. 014205 2010

ISSN 0163-1829

DOI 10.1103/PhysRevB.81.014205


Title Stationary states and fractional dynamics in systems with long-range interactions

Author(s) Van Den Berg, TL; Fanelli, D; Leoncini, X

Source EPL 89 (5): Art No. 50010 2010

ISSN 0295-5075

DOI 10.1209/0295-5075/89/50010


Title Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

Author(s) Vaxelaire, N; Proudhon, H; Labat, S; Kirchlechner, C; Keckes, J; Jacques, V; Ravy, S; Forest, S; Thomas, O

Source NEW JOURNAL OF PHYSICS 12 Art No. 035018 2010

ISSN 1367-2630

DOI 10.1088/1367-2630/12/3/035018


Title 3D strain imaging in sub-micrometer crystals using cross-reciprocal space measurements: Numerical feasibility and experimental methodology

Author(s) Vaxelaire, N; Labat, S; Chamard, V; Thomas, O; Jacques, V; Picca, F; Ravy, S; Kirchlechner, C; Keckes, J

Source NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268 (3-4):388-393 2010

Conference Title Spring Meeting of the European-Materials-Research-Society

Conference Date JUN 08-12, 2009

Conference Location Strasbourg, FRANCE

ISSN 0168-583X

DOI 10.1016/j.nimb.2009.09.010


Title Out-of-plane stresses arising from grain interactions in textured thin films

Author(s) Vodnick, AM; Nowak, DE; Labat, S; Thomas, O; Baker, SP

Source ACTA MATERIALIA 58 (7):2452-2463 2010

ISSN 1359-6454

DOI 10.1016/j.actamat.2009.12.031


Title Effect of Si and He implantation in the formation of ultra shallow junctions in Si

Author(s) Xu, M; Regula, G; Daineche, R; Oliviero, E; Hakim, B; Ntsoenzok, E; Pichaud, B

Source THIN SOLID FILMS 518 (9):2354-2356 2010

Conference Title Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting

Conference Date JUN 08-12, 2009

Conference Location Strasbourg, FRANCE

ISSN 0040-6090

DOI 10.1016/j.tsf.2009.09.153


Title Study of discharge after electron irradiation in sapphires and polycrystalline alumina

Author(s) Zarbout, K; Moya, G; Ahmed, AS; Damamme, G; Kallel, A

Source JOURNAL OF APPLIED PHYSICS 108 (9): Art No. 094109 2010

ISSN 0021-8979

DOI 10.1063/1.3504856


Title Three-Dimensional Linear Instability Analysis of Thermocapillary Return Flow on a Porous Plane

Author(s) Zhao, SC; Liu, QS; Nguyen-Thi, H; Billia, B

Source CHINESE PHYSICS LETTERS 27 (2): Art No. 024707 2010

ISSN 0256-307X

DOI 10.1088/0256-307X/27/2/024707


Title Thermal effects on Rayleigh-Marangoni-Benard instability in a system of superposed fluid and porous layers

Author(s) Zhao, SC; Liu, QS; Liu, R; Nguyen-Thi, H; Billia, B

Source INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER 53 (15-16):2951-2954 2010

ISSN 0017-9310

DOI 10.1016/j.ijheatmasstransfer.2010.04.003


[dernière mise à jour : janvier 2011]