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Maître de conférences, Université d'Aix-Marseille

Equipe Défauts étendus et nano-objets

Domaines d'activité :

Structure et défauts dans les matériaux ordonnés: dislocations, défauts ponctuels et étendus, interfaces

Microscopie Électronique en Transmission : CTEM (WB-DF), LACBED, HRTEM corrigée des aberrations géométriques (GAC-HRTEM)

Publications récentes :

Optimum correction conditions for aberration-corrected HRTEM SiC dumbbells chemical imaging. M. Texier, and J. Thibault-Penisson, Micron, vol. 43, n°4, p516 (2011).
ISSN : 0968-4328 / DOI : 10.1016/j.micron.2011.09.014

Swelling and stacking fault formation in helium implanted SiC. J.F. Barbot, M.F. Beaufort, M. Texier, and C. Tromas, Journal of Nuclear Materials, vol. 413, n°3, p162 (2011).
ISSN : 022-3115 / DOI : 10.1016/j.jnucmat.2011.04.022

Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications. Micard G., Hahn G., Terheiden B., Chrastina D., Isella G., Moiseev T., Cavalcoli D., Cavallini A., Binetti S., Acciarri M., Le Donne A., Texier M., and Pichaud B., Physica Status Solidi C, vol. 7, n°3-4, p712 (2010).
ISSN : 1862-6351 / DOI : 10.1002/pssc.200982745

Dislocation nucleation in heteroepitaxial semiconducting films. Pichaud B., Burle N., Texier M., Alfonso C., Gailhanou M., Thibault-Penisson J., Fontaine C., Vdovin V.I., Physica Status Solidi C, vol. 6, n°8, p1827 (2009).
ISSN : 1862-6351 / DOI : 10.1002/pssc.200881469

Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores. Lancin M., Texier M., Regula G., Pichaud B., Philosophical Magazine, vol. 89, n°15, p1251 (2009).
ISSN : 1478-6435 / DOI : 10.1080/14786430902919497

Links between etching grooves of partial dislocations and their characteristics determined by TEM in 4H SiC. Ayoub J.-P., Texier M., Regula G., Pichaud B., Lancin M., Materials Research Society Symposium Proc., 1069, D02-04 (2008).
ISSN : 0272-9172

Core composition of partial dislocations in N-doped 4H-SiC determined by TEM techniques, dislocation core reconstruction and image contrast analysis. Texier M., Lancin M., Regula G., Pichaud B., Microscopy of Semiconducting Materials, Cambridge 2007, Springer proceedings in Physics, vol. 120, ed. A.G. Cullis, P.A. Midgley, p 157 (2008).
ISSN : 0930-8989 / DOI : 10.1007/978-1-4020-8615-1_33

Hydrogenated nanocrystalline silicon investigated by conductive atomic force microscopy. Cavallini A., Cavalcoli D., Rossi M., Tomasi A., Pichaud B., Texier M., Le Donne A., Pizzini S., Chrastina D., Isella G., Microscopy of Semiconducting Materials, Cambridge 2007, Springer proceedings in Physics, vol. 120, ed. A.G. Cullis, P.A. Midgley, p 301 (2008).
ISSN : 0930-8989 / DOI : 10.1007/978-1-4020-8615-1_65

Structural characterization of nanocrystalline silicon layers grown by LEPECVD for optoelectronic applications. Texier M., Acciari M., Binetti S., Cavalcoli D., Cavallini A., Chrastina D., Isella G., Lancin M., Le Donne A., Tomasi A., Pichaud B., Pizzini S., Rossi M., Microscopy of Semiconducting Materials, Cambridge 2007, Springer proceedings in Physics, vol. 120, ed. A.G. Cullis, P.A. Midgley, p 305 (2008).
ISSN : 0930-8989 / DOI : 10.1007/978-1-4020-8615-1_66

Structural characterization of nc-Si films grown by low-energy PECVD on different substrates. Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S., Applied surface Science, 254, p 2804 (2008).
ISSN : 0169-4332 / DOI : 10.1016/j.apsusc.2007.10.025

Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications. Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S., Solid State Phenomena, 131-133, p 33 (2008).
ISSN : 1012-0394 / DOI : 10.4028/www.scientific.net/SSP.131-133.33

Al-Pd-Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain. Texier M., Joulain A., Bonneville J., Thilly L., Rabier J., Philosophical Magazine, 87, n°10, p 1497–1511 (2007).
ISSN : 1478-6435 / DOI : 10.1080/14786430601047707

LACBED study of extended defects in 4H-SiC. Texier M., Regula G., Lancin M., Pichaud B., Philosophical Magazine Letters, 86, n°9, p 529-537 (2006).
ISSN : 0950-0839 / DOI : 10.1080/09500830600873752

Corrigendum to “LACBED study of extended defects in 4H-SiC”, Texier M., Regula G., Lancin M., Pichaud B., Philosophical Magazine Letters, 87, n°2, p 135 (2007).
ISSN : 0950-0839 / DOI : 10.1080/09500830701204113

TEM characterization of dislocations and slip systems in stishovite deformed at 14 GPa, 1300°C in the multianvil apparatus. Texier M., Cordier P., Physics and Chemistry of Minerals, 33, n°6, p 394 (2006).
ISSN : 0342-1791 / DOI : 10.1007/s00269-006-0088-8

Nanoindentation-induced deformation in Al-Pd-Mn single quasicrystals. Coupeau C., Texier M., Joulain A., Bonneville J., Applied Physics Letters, 88, p 073103 (2006).
ISSN : 0003-6951 / DOI : 10.1063/1.2178412

Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications. Pizzini S., Acciarri M., Binetti S., Cavalcoli D., Cavallini A., Chrastina D., Colombo L., Grilli E., Isella G., Lancin M., Le Donne A., Mattoni A., Peter K., Pichaud B., Poliani E., Rossi M., Sanguinetti S., Texier M., von Kanel H., Materials Science & Engineering B, 134, p118 (2006).
ISSN : 0921-5107 / DOI : 10.1016/j.mseb.2006.06.038

Shear experiments under confining pressure conditions of Al-Pd-Mn single quasicrystals. Texier M., Thilly L., Bonneville J., Proult A., Rabier J., Materials Science & Engineering A, 400-401, p 311 (2005).
ISSN : 0921-5093 / DOI : 10.1016/j.msea.2005.01.071

On the plasticity of Al-Cu-Fe quasicrystals. Texier M., Proult A., Bonneville J., Materials Science & Engineering A, 400-401, p 315 (2005).
ISSN : 0921-5093 / DOI : 10.1016/j.msea.2005.02.089

Microstructures of i-AlPdMn deformed at low and intermediate temperatures. Texier M., Proult A., Bonneville J., Rabier J., Materials Science & Engineering A, 387-389, p 1023 (2004).
ISSN : 0921-5093 / DOI : 10.1016/j.msea.2004.01.120

Low temperature deformation mechanisms of icosahedral AlPdMn quasicrystals. Texier M., Bonneville J., Proult A., Rabier J., Thilly L., Materials Research Society Symposium Proc., 805, LL.5.3.1 (2004).
ISSN : 0272-9172

Microstructural analysis of i-AlPdMn quasicrystals deformed between room temperature and 300°C under confining pressure. Texier M., Proult A., Bonneville J., Rabier J., Baluc N., Cordier P., Scripta Materialia, 49, n°1, p 47-52 (2003).
ISSN : 1359-6462 / DOI : 10.1016/S1359-6462(03)00169-6

On the yield point of icosahedral AlCuFe quasicrystals. Texier M., Bonneville J., Proult A., Rabier J., Baluc N., Guyot P., Scripta Materialia, 49, n°1, p 41-46 (2003).
ISSN : 1359-6462 / DOI: 10.1016/S1359-6462(03)00171-4

Microstructures of icosahedral AlPdMn quasicrystals deformed at room temperature in an anisotropic confining medium. Texier M., Proult A., Bonneville J., Rabier J., Baluc N., Cordier P., Philosophical Magazine Letters, 82, n°12, p 659 (2002).
ISSN : 0950-0839 / DOI : 10.1080/0950083021000036751