Marie-Ingrid Richard
IM2NP
Faculté des Sciences et Techniques
Avenue Escadrille Normandie Niemen
Service 262
13397 Marseille Cedex 20
France

téléphone : + 33 (0) 4 91 28 80 13
fax : +33 (0) 4 91 28 27 93
mail : marie-ingrid.richard@im2np.fr


Maître de conférences, Université d'Aix-Marseille


Domaines d'activité :

Contraintes, Interdiffusion, Ge - Si(001), Nitrures, diffusion et diffraction des rayons X en incidence rasante (GISAXS, GIXD), diffraction anomale (MAD), DAFS, simulation par éléments finis, défauts, fautes d’empilements, échelle nanométrique

Publications récentes dans des revues avec comité de lecture

D.D. Fong, C.A. Lucas, M.-I. Richard, and M.F. Toney, "X-Ray Probes for In Situ Studies of Interfaces", MRS Bull., Vol. 35, No. 7 (July 2010) pp. 481–560

M.-I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, Carol Thompson, P. H. Fuoss and G. B. Stephenson1, In-Situ Synchrotron X-Ray Studies of Strain and Composition Evolution during Metal-Organic Chemical Vapor Deposition of InGaN, Appl. Phys. Lett. 96 (2010).

N.A. Katcho, M.I. Richard, O. Landré, G. Tourbot, M.G. Proietti, H. Renevier, V. Favre-Nicolin, B. Daudin, G. Chen, J.J. Zhang, Z. Zhong, M. Stoffel, O. Schmidt, G. Renaud, T. U. Schülli and G. Bauer, Combining spectroscopy and simulations to probe the structural properties of Ge/Si(001) nano-islands, ESRF highlights 2009.

N.A. Katcho, M.I. Richard, O. Landré, G. Tourbot, M.G. Proietti, H. Renevier, V. Favre-Nicolin, B. Daudin, G. Chen, J.J. Zhang and G. Bauer, Structural properties of Ge/Si(001) nano-islands and AlGaN nanowires by Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction, Journal of Physics: Conference Series 190, 012129 (2009).

M.-I. Richard, T.U. Schülli, G. Renaud, E. Wintersberger, G. Chen, G. Bauer, V. Holy, In situ x-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes, Phys. Rev. B. 80, 045313 (2009)

M.-I. Richard, N.A. Katcho, M.G. Proietti, H. Renevier, V. Favre-Nicolin, Z. Zhong, G. Chen, M. Stoffel, O. Schmidt, G. Renaud, T. U. Schülli, and G. Bauer, Structural properties of Ge/Si(001) Nano-Islands by  Diffraction Anomalous Fine Structure and Multiwavelength Anomalous Diffraction, Eur. Phys. J. Special Topics 167, 3 (2009).

T.U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlik, F. Montalenti, G. Chen, L. Miglio, F. Schäffler, and G. Bauer, Enhanced Relaxation and Intermixing in Ge islands Grown on Pit-Patterned Si(001) Substrates, Physical Review Letters 102, 025502 (2009).

M.-I. Richard, V. Favre-Nicolin, G. Renaud, T.U. Schülli, C. Priester, Z. Zhong, and T.-H. Metzger, Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x-rays, Applied Physics Letters 94, 013112 (2009).

M.-I. Richard, G. Chen, T.U. Schülli, G. Renaud, G. Bauer, Coalescence of domes and superdomes at a low growth rate or during annealing: towards the formation of flat-top superdomes, Surf. Sci.  602, 2157 (2008).

I. A. Vartanyants, A. V. Zozulya, K. Mundboth, O. M. Yefanov, M.-I. Richard, E. Wintersberger, J. Stangl, A. Diaz, C. Mocuta, T.H. Metzger, G. Bauer, T. Boeck, and M. Schmidtbauer, Crystal truncation planes revealed by three- dimensional reconstruction of reciprocal space,  Phys. Rev. B 77, 115317 (2008).

M.-I. Richard, T.H. Metzger, V. Holý, K. Nordlund, Revealing the core structure of defects, ESRF highlights 2007.

M.-I. Richard, T.H. Metzger, V. Holý, K. Nordlund, Defects Cores Investigated by X-Ray Scattering close to Forbidden Reflections in Silicon, Phys. Rev. Lett. 99, 225504 (2007).

T.U. Schülli, M.-I. Richard, G. Renaud, V. Favre-Nicolin, E. Wintersberger, G. Bauer, In situ investigation of the island nucleation of Ge on Si(001) using x-ray scattering methods, Appl. Phys. Lett. 89, 143114 (2006).

M.-I. Richard, T.U. Schülli, E. Wintersberger, G. Renaud, G. Bauer, Growth mode, strain state and shape of Ge islands during their growth at different temperatures: a combined in situ GISAXS and GIXD study, Thin Solid Films 508, 213 (2006).

M.-I. Richard, T.U. Schülli, E. Wintersberger, G. Renaud, G. Bauer, In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(001), Nuclear Instruments and Methods B 246, 35 (2006).

J. Highland, T. T. Fister, M.-I. Richard, D. D. Fong, P. H. Fuoss, Carol Thompson, J. A. Eastman, S. K. Streiffer, and G. B. Stephenson, "Polarization Switching without Domain Formation at the Intrinsic Coercive Field in Ultrathin Ferroelectric PbTiO3",  Physical Review Letters  105, 167601 (2010).

S. K. Streiffer, R. V. Wang, M. J. Highland, T. T. Fister, M.-I. Richard, D. D. Fong, J. A. Eastman, P. H. Fuoss, C. Thompson, and G. B. Stephenson, "Reversible Chemical Switching of Ultra-Thin PbTiO3 Films", Proceedings of the 14th US-Japan Seminar on Dielectric and Piezoelectric Materials, October 11-14, 2009, Welches, Oregon.



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