 | Alain Portavoce |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Case 142 13397 Marseille Cedex 20 France | |
| téléphone : +33 (0) 4 91 28 28 04 fax : + 33 (0) 4 91 28 87 75 | |
| mail : alain.portavoce@im2np.fr |
| | Alain Portavoce |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Case 142 13397 Marseille Cedex 20 France | |
| téléphone : +33 (0) 4 91 28 28 04 fax : + 33 (0) 4 91 28 87 75 | |
| mail : alain.portavoce@im2np.fr |
Chargé de Recherche CNRS
Diffusion • Ségrégation de surfaces • Silicium-Germanium
Publications récentes :
Portavoce A., Volpi F., Ronda A., Gas P., Berbezier I. Sb segregation in Si and SiGe : effect on the growth of self-organised Ge dots. Thin Solid Films, vol. 380, p. 164-168, 2000
Volpi F., Portavoce A., Ronda A., Shi Y., Gay J.M., Berbezier I. Nucleation and evolution of SiGe islands on Si(001). Thin Solid Films, vol. 380, p. 46-, 2000
Berbezier I., Ronda A., Portavoce A. SiGe nanostructures : new insights into growth processes. Journal of Physics - Condensed Matter, vol. 14, n° 35, p. 8283-8331, 2002
Portavoce A., Bassani F., Ronda A., Berbezier I. Auger spectroscopy thermodesorption of Sb on SiGe layers grown on Si(100) substrates. Surface Science, vol. 519, p. 185-, 2002
Portavoce A., Ronda A., Berbezier I. Sb surfactant mediated growth of Ge nanostructures. Material Science and Engineering B, vol. 89, p. 205-, 2002
Berbezier I., A. Ronda, A. Portavoce, Motta N. Ge dots self-assembling : surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities. Applied Physics Letters, vol. 83, p. 4833-, 2003
Berbezier I., Ronda A., Volpi F., Portavoce A. Morphological evolution of SiGe layers. Surface Science, vol. 531, p. 231-, 2003
Gas P., Girardeaux C., Mangelinck D., Portavoce A. Reaction and diffusion at RDI of micro and nanostructured materials. Material Science and Engineering B, vol. 101, p. 43-, 2003
Lim Y.S. , F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, Berbezier I. The effect of Sb on the oxidation of Ge quantum dots. Material Science and Engineering B, vol. 101, p. 190-, 2003
Portavoce A., Berbezier I., Ronda A. Effects of Sb on Si/Si and Ge/Si growth process. Materials Science and Engineering B, vol. 101, n° 1-3, p. 181-185, 2003
Ronda A., I. Berbezier, A. Pascale, A. Portavoce, Volpi F. Experimental insights into Si and SiGe growth instabilities : influence of kinetic growth parameters and substrate orientation. Material Science and Engineering B, vol. 101, p. 95-, 2003
Volpi F., A.R. Peaker, I.D. Hawkins, A. Portavoce, A. Ronda, Berbezier I. Hole trapping in self-assembled SiGe quantum dots. Material Science and Engineering B, vol. 101, p. 338, 2003
Portavoce A., Berbezier I., Gas P., Ronda A. Sb-surface segregation during epitaxial growth of SiGe heterostructures : the effects of Ge composition and biaxial stress. Physical Review B, vol. 69, n° 15, p. 155414, 2004
Portavoce A., Berbezier I., Ronda A. Sb-surfactant-mediated growth of Si and Ge nanostructures. Physical Review B, vol. 69, p. 155416, 2004
Portavoce A., Gas P., Berbezier I., Ronda A, Christensen J.S., Yu. Kuznztsov A., Svensson B.G. Sb lattice diffusion in Si l-xGex /Si(100) heterostructures : chemical and stress effects. Physical Review B, vol. 69, p. 155415, 2004
Portavoce A., Gas P., Berbezier I., Ronda A., Christensen J.S., Svensson B. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : Effect of Ge concentration and biaxial stress. Journal of Applied Physics, vol. 96, n°6, p. 3158-3163, 2004
Portavoce A., M. Kammler, R. Hull, M. C. Reuter, M. Copel, Ross F. M. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001). Physical Review B, vol. 70, p. 195306, 2004
Portavoce A., Berbezier I., Ronda A., Gas P., Christensen J.S., Kuznetsov A.Yu., Svensson B.G. Dopant diffusion in Si1-xGex thin films : Effect of epitaxial stress. Defect and Diffusion Forum, vol. 249, p. 135, 2006
Portavoce A., Kammler M., Hull R., Reuter M.C., Ross F.M. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces. Nanotechnology, vol. 17, p. 4451, 2006
Rodriguez N., Adrian J., Grosjean C., Haller G., Girardeaux C., Portavoce A. Evaluation of scanning capacitance microscopy sample preparation by focused ion beam. Microelectronics Reliability, vol. 46, n° 9-11, p. 1554-1557, 2006
Adrian J; Rodriguez, N; Essely, F, Haller G, Grosjean C, Portavoce A, Girardeaux C. Investigation of a new method for dopant characterization. Microelectronics Reliability, vol. 47, n° 9-11, p. 1599-1603, 2007
Portavoce A, Simola R., Mangelinck D., Bernardini J., P.fornara P. Dopant diffusion during amorphous Silicon crystallisation. Diffusion and Defect Data, vol 264,33-38, 2007
Portavoce A., Hull R., Reuter M.C., Ross F.M. Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation. Physical Review B, vol. 76, p. 235301-, 2007
Balogh Z., Erdelyi Z., Beke DL., Langer GA., Csik A., Boyen HG., Wiedwald U., Ziemann P., Portavoce A., Girardeaux C. Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge. Applied Physics Letters, vol. 92, n° 14, p. 143104, 2008
Hoummada K., Portavoce A., Perrin-Pellegrino C., Mangelinck D., et Bergman C. Differential scanning calorimetry measurements of kinetic factors involved in salicide process. Applied Physics Letters, vol 92, p. 133109, 2008
Portavoce A., Hull R., Reuter .C., Copel M., Ross F.M. Control of homoepitaxial Si nanostructures by locally modified surface reactivity. Applied Physics Letters, vol. 92, p. 053106-, 2008
Lalmi B, Girardeaux C., Portavoce A., Bernardini J., Aufray B. Growth and dissolution kinetics of ultra thin silicon films on Cu(100). Journal of Nanoscience and Nanotechnology, acceptée, 2009
Lalmi B., Bernardini J., Rolland A., Portavoce A., Girardeaux C., Rangis A., Biberian J.P., Aufray B. Kinetics and structural aspects of the first stages of silicides formation : Si/Ni (111). Journal of Nanomaterials, acceptée, 2009
Portavoce A, Chai G., Chow L., Bernardini J. Nanosize effect on Ge diffusion in polycrystalline Si. Journal of Applied Physics, sous presse, 2009
