 | Bernard Pichaud |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 261 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 83 11 mail : bernard.pichaud@im2np.fr |
| | Bernard Pichaud |
| IM2NP Faculté des Sciences et Techniques Avenue Escadrille Normandie Niemen Service 261 13397 Marseille Cedex 20 France téléphone : + 33 (0) 4 91 28 83 11 mail : bernard.pichaud@im2np.fr |
Professeur Classe exceptionnelle, Université d'Aix-Marseille
Co-responsable de l'Equipe «Défauts étendus et nano-objets : structure et thermodynamique»
Membre du Conseil de Laboratoire
Domaines d'activité :
Physique des défauts étendus, plasticité, relaxation dans les hétéroépitaxies de semiconducteurs, diffusion dans le silicium
Publications récentes dans des revues avec comité de lecture
Putero M., Burle N., Pichaud B. Misfit dislocation cross-slip at the first stages of plastic relaxation in low mismatched heterostructures. Philosophical Magazine A, vol. 81, n° 1, p.125-136, 2001
Putero-Vuaroqueaux M., Burle N., Pichaud B. Metastability in the Matthews‚ mechanism for semiconductor film relaxation. Philosophical Magazine Letters, vol. 81, n° 8, p.519-525, 2001
Pichaud B., Burle N., Putero-Vuaroqueaux M. and Curtil C. Low misfit systems as tools for understanding dislocation mechanisms in semiconducting heteroepitaxial films. Journal of Physics - Condensed Matter, vol.14, p.13255-13267, 2002
Pichaud B., Burle N., Putero-Vuaroqueaux M., Curtil C. Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films. Journal of Phys. Cond. Matter., 14, 13255, 2002
Regula G., Elbouayadi R., Pichaud B., Ntsoenzok E. Nickel gettering in silicon: role of oxygen. Solid State Phenomena, 82-84, 355-360, 2002
Ventura L., Pichaud B., Lanois F. Impact of a cooling process on the dopant activity of platinum in silicon. Solid State Phenomena, 82-84, 412-422, 2002
Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B. Structural characterization of 6H and 4H-SiC polytypes by cathodoluminescence and X-Ray Topography. J. of Physics : Condensed Matter, 15, 1, 2003
Ventura L., Pichaud B., Vervisch W., Lanois F. p-type doping by platinum diffusion in low phosphorus doped silicon. Europ. Phys. J.: Appl. Phys., 23, 33, 2003
Barge D., Pichaud B., Joly J.P. High temperature Si, 001 surface defect evolution during extended annealing: experimental results and modelling. Appl. Surf. Science, 226, 341-6, 2004
Feklisova O. V. , Yakimov E. B., Yarykin N., Pichaud B. Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon. Journ. Phys.: Cond. Mat., 16, 201-5, 2004
Hidalgo P., Ottaviani L., Idrissi H., Lancin M., Martinuzzi S., Pichaud B. Structural characterisation of, 11, 20 4H-SiC substrates by cathodoluminescence and X-ray topography. Europ. Phys. Journ.:Appl. Phys., 27, 231-3, 2004
Leoni E. , Binetti S., Pichaud B., Pizzini S. Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration. Europ. Phys. Journ.: Appl. Phys., 27, 123-7, 2004
Leoni E., El Bouayadi R, Martinelli L., Regula G., Ntsoenzok E., Pichaud B., Pizzini S. Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix. Europ. Phys. Journ.: Appl. Phys., 27, 89-92, 2004
Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., Pichaud B. Structural characterization of 6H- and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography. Journ. Phys.: Cond. Mat., 16, 107-14, 2004
Pizzini S., Leoni E., Binetti S., Acciari M., Le Donne A., Pichaud B. Luminescence of dislocations and oxide precipitates in Si. Solid State Phenom., 95-96, 273-82, 2004
Vervisch W., Ventura L., Pichaud B., Ducreux G., Lanois F., Lhorte A. Kinetic reaction of the formation of the platinum related complex at the origin of the p-type doping effect in silicon. Solid State Phenom., 95-96, 361-6, 2004
Feklisova O. V., Pichaud B., Yakimov E.B. Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density. Phys. Stat. Sol. A, 202, 896-900, 2005
Idrissi H., Lancin M., Douin J., Regula G., Pichaud B. Dynamical study of dislocations and 4H to 3C transformation induced by stress in, 11-20 4H-SiC. Mat. Sci. Forum, 483-485, 299-302, 2005
Idrissi H., Regula G., Lancin M., Douin J., Pichaud B. Study of Shockley partial dislocation mobility in highly N-doped 4H-SiC by cantilever bending. Phys. Stat Sol C, 6, 1998-2003, 2005
Ottaviani L., Idrissi H., Hidalgo P., Lancin M., Pichaud B. Structure and electrical studies of partial dislocations and faults in, 11-20-oriented 4H-SiC. Phys. Stat Sol C, 6, 1792-6, 2005
Regula G., Lancin M., Idrissi H., Pichaud B., Douin J. Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC. Phil. Mag. Letters, 85, 259-267, 2005
El Bouayadi R., Regula G., Lancin M., Pichaud B.,Desvignes M. Influence of metal trapping on the shape of cavities induced by high energy He+ implantation. Journal of Applied Physics, vol. 99, p. 43509, 2006
Lancin M., Regula G., Douin J., Idrissi H., Ottaviani L., Pichaud B. Investigation of mechanical stress-induced double stacking faults in (11-20) highly n-doped 4H-SiC combining optical microscopy TEM contrast simulation and dislocation core reconstruction. Mat. Sci. Forum, vol. 527-529, p. 379-82, 2006
Pirouz P., Zhang M., Hobgood.HMcD, Lancin M., Douin J., Pichaud B. Nitorgen doping and multiplicityof stacking faults in SiC. Philosophical Magazine, vol. 86, n° 29-31, p. 4685-97, 2006
Pizzini S., Acciarri M., Binetti S., Cavalcoli D., Cavallini A., Chrastina D., Colombo L., Grilli E., Isella G., Lancin M., Le Donne A., Mattoni A., Peter K., Pichaud B., Poliani E., Rossi M., Sanguinetti S., Texier M., Von Kanel H. Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications. Material Science and Engineering B, vol. 134, p. 118, 2006
Texier M., Regula G., Lancin M., Pichaud B. LACBED study of extended defects in 4H-SiC. Philosophical Magazine Letters, vol. 86, n° 9, p. 529, 2006
Idrissi H., Regula G., Lancin M., Pichaud B. 30° Si(g) partial dislocation mobility in 4H-SiC doped with Nitrogen. Journal of Applied Physics, vol. 101, n° 11, p. 113533.1-113533.5, 2007
Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S. Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications. Solid State Phenomena, vol. 131-133, p. 33, 2008
Le Donne A., Binetti S., Isella G., Pichaud B., Texier M., Acciarri M., Pizzini S. Structural characterization of nc-Si films grown by low-energy PECVD on different substrates. Applied Surface Science, vol. 254, p. 2804, 2008
