 | Didier Goguenheim |
| IM2NP Institut Supérieur d'Electronique et du Numérique (ISEN) Maison des Technologies Place G. Pompidou 83000 Toulon | |
| Tél. Bur. : +33 (0) 494 038 955 Fax. : + 33 (0) 494 038 951 | |
| mail : didier.goguenheim@im2np.fr |
| | Didier Goguenheim |
| IM2NP Institut Supérieur d'Electronique et du Numérique (ISEN) Maison des Technologies Place G. Pompidou 83000 Toulon | |
| Tél. Bur. : +33 (0) 494 038 955 Fax. : + 33 (0) 494 038 951 | |
| mail : didier.goguenheim@im2np.fr |
Enseignant - Chercheur
Domaine d'activité : Electronique moléculaire
Publications récentes :
Bravaix A., Goguenheim D., Revil N., Vincent E.- Comparison of secondary impact ionization phenomena between 0.18 µm N- and P-channel MOSFET's.- Proceedings of the 30th European Solid State Device Research Conference (ESSDERC’2000), G. Crean and F. MacCabe (eds), Editions Frontières, p. 140-143, 2000
Goguenheim D., Bravaix A., Moragues J.M., Lambert P., Boivin P.- Comparison of oxide leakage currents induced by ion implantation and high field electric stress.- Microelectronics and Reliability, vol. 40, p. 751-754, 2000
Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Chaneliere C.- Determination of the electrical properties of thermally grown ultrathin nitride films.- Microelectronics and Reliability, vol. 40, p. 589-593, 2000
Bravaix A., Goguenheim D., Revil N., Vincent E.- Hot-carrier reliability study of second and first impact ionization degradation in 0.15 µm channel-length n-MOSFET’s.- Microelectronic Engineering, vol. 59, p. 101-108, 2001
Bravaix A., Goguenheim D., Revil N., Vincent E.- Injection mechanisms and lifetime prediction with the substrate voltage in 0.15µm channel-length N-MOSFET’s.- Microelectronics and Reliability, vol. 41, p. 1313-1318, 2001
Bravaix A., Goguenheim D., Revil N., Vincent E.- Injection mechanisms and lifetime prediction with the substrate-voltage in 0.15µm channel-length N-MOSFETs.- Proceedings of the 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2001), Bordeaux, France, p. 1313-, 2001
Goguenheim D., Bravaix A., Ananou B., Trapes C., Mondon F., Reimbold G.- Temperature and field dependence of stress induced leakage currents in very thin gate oxides.- Journal of Non-Crystalline Solids, vol. 280, p. 78-85, 2001
Goguenheim D., Bravaix A., Monserie C., Moragues J.M., Lambert P., Boivin P.- Comparison of oxide leakage currents induced by ion implantation and high field electric stress.- Solid State Electronics, vol. 45, n° 8, p. 1355-1360, 2001
Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Autran J.L.- Determination of the electrical properties of ultrathin silicon-based dielectric films : thermally grown SiOx.- Journal of Non-Crystalline Solids, vol. 280, n° 1-3, p. 69-77, 2001
Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Chaneliere C.- Determination of the electrical properties of thermally grown ultrathin nitride films.- Solid State Electronics, vol. 45, n° 8, p. 1265-1270, 2001
Trapes C., Goguenheim D., Bravaix A.- Caractérisation des dégradations engendrées après injections en porteurs chauds sur des échantillons MOS de 2.2nm d’épaisseur d’oxyde.- Actes des IVème Journées Nationales du Réseau Doctoral de Micro-électronique, Strasbourg, France, p. 63, 2001
Bescond M., Lannoo M., Goguenheim D., Autran J.L.- Towards a full microscopic approach to the modeling of nanotransistors.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002
Bravaix A., Gauthé L., Goguenheim D., Revil N., Rubaldo L., Vincent E.- Efficiency of interface trap generation under hole injections in 2.1nm thick gate-oxide P-MOSFET's.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, à paraître, 2002
Bravaix A., Goguenheim D., Revil N., Vincent E.- Comparison of low leakage and high speed deep submicron PMOSFET's submitted to hole injections.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'02), Stanford Sierra Camp, Lake Tahoe, USA, à paraître, 2002
Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E.- Carrier injection efficiency for the reliability study of 3.5-1.2nm thick gate-oxide CMOS technologies.- Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDim'O2), Grenoble, France, à paraître, 2002
Goguenheim D., Trapes C., Bravaix A.- Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002
Trapes C., Bravaix A., Goguenheim D.- Impact of carrier injection in 2.2 nm thick SiO2 oxides after first and substrate enhanced electron injection.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002
Trapes C., Goguenheim D., Bravaix A.- Comparaison des injections en mode d'ionisation primaire et secondaire sur des NMOSFET's de 2.2 nm d'épaisseur d'oxyde.- Actes des Vèmes Journées Nationales du Réseau Doctoral de Micro-électronique, Grenoble, p.192-193, 2002
Bescond M., Lannoo M., Goguenheim D. and Autran J.L. - Towards a full microscopic approach to the modeling of transistors with nanometer dimensions. - Journal of Non-Crystalline Solids, vol. 322, n° 1-3, p. 160-167, 2003
Bravaix A., Goguenheim D., Revil ., Rubaldo L. - Efficiency of interface trap generation under hole injection in 2.1nm thick gate-oxide P-MOSFET's. – Journal of Non-Crystalline Solids, vol. 322, p.139-146, 2003
Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E. - Carrier injection efficiency for the reliability study of 3.5-1.2nm thick gate-oxide CMOS technologies. - Microelectronic Reliability, vol. 43, p. 1241-1246, 2003
Goguenheim D., Trapes C., Bravaix A. - Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS. - Journal of Non-Crystalline Solids, vol. 322, p.183-190, 2003
Trapes C., Bravaix A., Goguenheim D. - Impact of carrier injection in 2.2nm-thick SiO2 oxides after first and substrate enhanced electron injection. - Journal of Non-Crystalline Solids, vol. 322, p.199-205, 2003
Bravaix A., Goguenheim D., Revil N., Vincent E.- Deep hole trapping effects in the degradation mechanisms of 6.5 to 2nm thick gate-oxide PMOSFETs.- Microelectronic Engineering, vol. 72, n° 1-4, p. 106-111, 2004
Bravaix A., Goguenheim D., Revil N., Vincent E.- Hole injection enhanced hot-carrier degradation in PMOSFETs used for system on chip applications with 6.5-2nm thick gate-oxide.- Microelectronic Reliability, vol. 44, n° 1, p. 65-77, 2004
Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.- Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies.- Proceedings of 24th International Conference on Microelectronics (MIEL'04), Nis, Serbie, p.649-652, 16-19 May 2004
Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.- Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.- Proceedings of the 16th European Symposium on Reliability of Electron Devices, Failure physics and analysis, (ESREF’05), Bordeaux, France, 10th-14th October 2005, p. 1370-1375, 2005
Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.- Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.- Microelectronics Reliability, vol. 4, n° 9-11, p. 1370-1375, 2005
Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.- Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.- Microelectronics Reliability, vol. 45, p. 487-492, 2005
Menou N., Castagnos A-M., Muller Ch., Goguenheim D., Goux L., Wouters D.J., Hodeau J-L., Barrett R.- Degradation and recovery of polarization under synchrotron X-rays in SrBi2Ta2O9 ferroelectric capacitors.- Journal of Applied Physics, vol. 97, n° 4, p. 044106, 2005
Trapes C., Goguenheim D., Bravaix A.- Ultrathin oxide reliability after combined constant voltage stress and substrate hot electron injection.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1860-1865, 2005
Trapes C., Goguenheim D., Bravaix A.- Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.- Microelectronics Reliability, vol. 45, p. 883-886, 2005
Goguenheim D.- Contribution à l'étude de la fiabilité des oxydes minces dans les structures Mos.- Habilitation à diriger des recherches, Université d'Aix-Marseille, 23 janvier 2006
Goguenheim D., Pic D., Ogier J.L. Oxide reliability below 3nm for advanced CMOS : issues, characterization and solutions. Microelectronics Reliability, vol. 47, p. 1373-1377, 2007
Pic D., Ogier J.L., Goguenheim D. A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectronics Reliability, vol. 47, p. 1322-1329, 2007
Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L. Oxidation kinetics of Ni metallic film: formation of NiO-based resistive switching structures. Thin Solid Films, vol. 516, n° 12, p. 4083-4092, 2008
Pic D., Ogier J.L., Goguenheim D. Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO2 thin oxides stressed to hard breakdown. Microelectronics Reliability, vol. 48, n° 3, p. 335-341, 2008
