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Chapitres d’ouvrages:

	Design Technology for Heterogeneous Embedded Systems Editors: Gabriela Nicolescu, Ian O'Connor and Christian Piguet Springer 2012 Chap. 16: Emerging Memory Concepts: Materials, Modelling and Design Christophe Muller, Damien Deleruyelle and Olivier Ginez ISBN: 978-94-007-1125-9 DOI : 10.1007/978-94-007-1125-9_16
	Handbook of Nanophysics Editors: Klaus D. Sattler CRC Press, 2010 Vol. 6 – Chap. 5: A Single Nano-Dot in a Plate Capacitor Gilles Micolau and Damien Deleruyelle ISBN: 978-142-007-5526-2

Publications récentes:

page de Damien Deleruyelle sur ResearcherID

Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
D. Deleruyelle, C. Dumas, M. Carmona, C. Muller, S. Spiga, and M. Fanciulli
Applied Physics Express, vol. 4(5), p. 51101, 2011
DOI : 10.1143/APEX.4.051101

Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications
J.-M. Portal, M. Bocquet, D. Deleruyelle, C. Muller
Journal of Low Power Electronics, vol. 7(5), 2011
DOI : doi:10.1166/jolpe.2011.1172

Experimental and theoretical study of electrode effects in HfO2 based RRAM
C. Cagli, J. Buckley, V. Jousseaume, T. Cabout, A. Salaun, H. Grampeix, J. F. Nodin, et al.
2011 International Electron Devices Meeting, pp. 28.7.1-28.7.4., 2011
DOI : 10.1109/IEDM.2011.6131634

Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing
M. Putero, T. Ouled-Khachroum, M.-V. Coulet, D. Deleruyelle, E. Ziegler, and C. Muller
Journal of Applied Crystallography, vol. 44(4), pp. 858-864, 2011
DOI : 10.1107/S0021889811024095

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
M. Bocquet, D. Deleruyelle, C. Muller, and J.-M. Portal
Applied Physics Letters, vol. 98(26), 2011
DOI : 10.1109/10.1063/1.3605591

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
C. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, Ch. Turquat, and S. Spiga
Solid-State Electronics, vol. 56(1), pp. 168-174, 2011
DOI : 10.1016/j.sse.2010.10.006

Accurate analysis of parasitic current overshoot during forming operation in RRAMs
S. Tirano, L. Perniola, J. Buckley, J. Cluzel, V. Jousseaume, Ch. Muller, D. Deleruyelle, B. De Salvo, and G. Reimbold
Microelectronic Engineering, vol. 88(7), pp. 1129-1132, 2011
DOI : 10.1016/j.mee.2011.03.062

Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes
C. Dumas, D. Deleruyelle, A. Demolliens, Ch. Muller, S. Spiga, E. Cianci, M. Fanciulli, I. Tortorelli, and R. Bez
Thin Solid Films, vol. 519(11), pp. 3798-3803, 2011
DOI : 10.1016/j.tsf.2010.12.244

Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
D. Deleruyelle, C. Muller, J. Amouroux, and R. Müller
Applied Physics Letters, vol. 96(26), 263504, 2010
DOI : 10.1109/10.1063/1.3458596

Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode
A. Demolliens, C. Muller, D. Deleruyelle, S. Spiga, E. Cianci, M. Fanciulli, F. Nardi, C. Cagli, and D. Ielmini
2009 IEEE International Memory Workshop, pp. 1-3, 2009
DOI : 10.1109/IMW.2009.5090606

A Dual-Gate Memory Cell with Two Inter-Poly Oxides
J.-R. Raguet, P. Calenzo, R. Laffont, D. Deleruyelle, R. Bouchakour, V. Bidal, A. Regnier, S. Niel, P. Fornara, and J.-M. Mirabel
Japanese Journal of Applied Physics, vol. 48(4), p. 04C058 (5p.), 2009
DOI : 10.1143/JJAP.48.04C058

On the electrostatic behavior of floating nanoconductors
D. Deleruyelle, and G. Micolau
Solid-State Electronics 52, (1), pp. 17-24, 2008
DOI : 10.1016/j.sse.2007.07.008

Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer
L. Courtade, Ch. Turquat, J.G. Lisoni, L. Goux, D.J. Wouters, D. Deleruyelle, and Ch. Muller ESSDERC 2008 - 38th European Solid-State Device Research Conference, pp. 218-221, 2008
DOI : 10.1109/ESSDERC.2008.4681737

Degradation of floating-gate memory reliability by few electron phenomena
G. Molas, D. Deleruyelle, B. De Salvo, G. Ghibaudo, M. Gely, L. Perniola, D. Lafond, and S. Deleonibus
IEEE Transactions on Electron Devices, vol. 53(10), pp. 2610-2619, 2006
DOI : 10.1109/TED.2006.882284

Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
D. Deleruyelle, G. Molas, B. De Salvo, M. Gely, and D. Lafond
Solid-State Electronics, vol. 49(11), pp. 1728-1733, 2005
DOI : 10.1016/j.sse.2005.10.023

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
J. Buckley, B. De Salvo, D. Deleruyelle, M. Gely, G. Nicotra, S. Lombardo, J.-F. Damlencourt, P. Hollinger, F. Martin, and S. Deleonibus
Microelectronic Engineering, vol. 80, pp. 210-213, 2005
DOI : 10.1016/j.mee.2005.04.070

Impact of few electron phenomena on floating-gate memory reliability
G. Molas, G., D. Deleruyelle, B. De Salvo, G. Ghibaudo, M. Gely, S. Jacob, D. Lafond, and S. Delconibus
IEDM Technical Digest. IEEE International Electron Devices Meeting, pp. 877-880, 2004
DOI : 10.1109/IEDM.2004.1419320

A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals
D. Deleruyelle, C. Le Royer, B. De Salvo, G. Le Carval, M. Gelly, T. Baron, J.-L. Autran, and S. Deleonibus
Microelectronic Engineering, vol. 72(1-4), pp. 399-404, 2004
DOI : 10.1016/j.mee.2004.01.027

Effect of high-k materials in the control dielectric stack of nanocrystal memories
E. Spitale, D. Corso, I. Crupi, G. Nicotra, S. Lombardo, D. Deleruyelle, M. Gely, N. Buffet, B. De Salvo, and C. Gerardi
ESSDERC 2004 - 30th European Solid-State Device Research Conference, pp. 161-164, 2004
DOI : 10.1109/ESSDER.2004.1356514

Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
D. Deleruyelle, J. Cluzel, B. De Salvo, D. Fraboulet, N. Buffet, and S. Deleonibus
Solid-State Electronics, vol. 47(10), pp. 1641-1644, 2003
DOI: 10.1016/S0038-1101(03)00171-0

	Damien Deleruyelle
	IM2NP - Polytech Dpt Microélectronique et Télécommunications 38, rue Frédéric Joliot-Curie IMT Technopôle de Château Gombert 13451 Marseille Cedex 20 France
	téléphone : +33 (0) 4 91 05 47 77
	mail : damien.deleruyelle@im2np.fr