 |
Nicolas Cavassilas |
| IM2NP Bât. IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France |
|
| téléphone : +33 (0) 4 13 55 20 16 fax : +33 (0) 4 13 55 20 01 |
|
| mail : nicolas.cavassilas@im2np.fr |
|
|
Nicolas Cavassilas |
| IM2NP Bât. IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France |
|
| téléphone : +33 (0) 4 13 55 20 16 fax : +33 (0) 4 13 55 20 01 |
|
| mail : nicolas.cavassilas@im2np.fr |
Maître de conférence, Université d'Aix-Marseille
Physique appliquée à la nanoélectronique en technologie MOS : semi-conducteurs contraints (Si, Ge, SiGe), calcul de bande, bande dans des puits et des fils quantiques, transport à fort champ (équ. de Boltzmann), transport quantique (fonction de Green).
Publications récentes :
N. Pons, N. Cavassilas, L. Raymond et al.
Three-dimensional k.p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
Appl. Phys. Lett. 99, 082113 (2011).
N. Cavassilas, F. Michelini, M. Bescond
Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
J. Appl. Phys. 109, 073706 (2011).
N. Cavassilas, M. Bescond, F. Michelini
Phonon-induced transverse-mode coupling in double-gate transistor
14th International Workshop on Computational Electronics (IWCE), Pisa (Italy), October 2010.
N. Cavassilas, N. Pons, F. Michelini, M. Bescond
Multiband quantum transport simulations of ultimate p-type double-gate transistors: influence of the channel orientation
Appl. Phys. Lett. 96, 102102 (2010).
N. Cavassilas, S. d’Ambrosio, M. Bescond
Quantum simulation of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs : orientation and strain effects
IEDM Tech. Digest (IEEE), Baltimore (USA), December 2009.
F. Michelini, N. Cavassilas, R. Hayn and M. Szczap
Multiband k.p models for strained zincblende crystals: Application to the fine structure of ZnO
Phys Rev B 80, 245210 (2009).
N. Pons, N. Cavassilas, F. Michelini, L. Raymond, M. Bescond
Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
J. Appl. Phys. 106, 53711 (2009).
K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, J.L. Autran
Improved effective mass theory for silicon nanostructures
Appl. Phys. Lett. 93, 92103 (2008).
M. Bescond, N. Cavassilas, M. Lannoo
Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
Nanotechnology 18, 255201 (2007).
K. Nehari, N. Cavassilas, F. Michelini, M. Bescond, J.L. Autran, M. Lannoo
Full band study of current across silicon nanowire transistors
Appl. Phys. Lett. 90, 132112 (2007).
K. Nehari, N. Cavassilas, J.L. Autran, M. Bescond, D. Munteanu, M. Lannoo
Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: an atomistic study
Solid State Electron. 50, 716 (2006).
N. Cavassilas
Nanometric MOS Transistor with maximized ratio between On-state current and Off-state current
Patent WO/2006/095112 publication date 14/09/2006.
M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, L. Raymond, J.L. Autran, M. Lannoo, A. Asenov
Ballistic transport in Si, Ge and GaAs nanowire MOSFETs
IEDM Tech. Digest (IEEE), Washinton (USA), December 2005.
K. Nehari, N. Cavassilas, J.L. Autran, M. Bescond, D. Munteanu, M. Lannoo
Influence of band-structure on electron ballistic transport in silicon nanowire MOSFETs: an atomistic study
Proceedings of the 35rd European-Solid-State-Device-Research ESSDERC '05 IEEE. 2005: 229-232.
M. Bescond, N. Cavassilas, K. Nehari, J.L. Autran, M. Lannoo, A. Asenov
Impact of point defect location in nanowire silicon MOSFETs
Proceedings of the 35rd European-Solid-State-Device-Research ESSDERC '05 IEEE. 2005, 221-224.
N. Cavassilas, M. Bescond, J.L. Autran
Improvement of current-control induced by oxide notch in very short field-effect transistor
Appl. Phys. Lett. 87, 73509 (2005).
M. Bescond, N. Cavassilas, J.L. Autran, D. Munteanu, and M. Lannoo
Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green’s function formalism,
Journal of Computational Electronics 3, 393 (2004).
M. Bescond, K. Nehari, J.L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
IEDM Tech. Digest (IEEE), San Francisco (USA), December 2004.
F. Payet, N. Cavassilas, J.L. Autran
Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor
J. Appl. Phys. 95, 713 (2004)
S. Richard, N. Cavassilas, F. Aniel, G. Fishman
Strained silicon on SiGe: temperature dependence of carrier effective masses
J. Appl. Phys. 94, 5088 (2003).
S. Richard, F. Aniel, G. Fishman, N. Cavassilas
Energy-band structure in strained silicon: a 20-band k.p and bir-pikus Hamiltonian model
J. Appl. Phys. 94, 1795 (2003).
N. Cavassilas, J. L. Autran, F. Aniel, G. Fishman
Energy and temperature dependence of electron effective mass in silicon
J. Appl. Phys. 92, 1431 (2002).
N. Cavassilas, F. Aniel, K. Boujdaria, G. Fishman
Energy-band structure of GaAs and Si: A sps* k.p method
Physical Review B 64, 115207 (2001).
