page personnelle

Enseignant - Chercheur

Responsable de l'option Micro- et Nano-Electronique de l'ISEN

Domaines d'activité :

Fiabilité des filières CMOS avancées,
Physique des dispositifs et technologie des process,
Caractérisations électriques et techniques de mesures,
Modélisations AC/DC de la fiabilité porteurs chauds transistors MOSFET's 0.1µm

Publications récentes :

Bravaix A., Goguenheim D., Revil N., Vincent E.- Comparison of secondary impact ionization phenomena between 0.18 µm N- and P-channel MOSFET's.- Proceedings of the 30th European Solid State Device Research Conference (ESSDERC’2000), G. Crean and F. MacCabe (eds), Editions Frontières, p. 140-143, 2000

Goguenheim D., Bravaix A., Moragues J.M., Lambert P., Boivin P.- Comparison of oxide leakage currents induced by ion implantation and high field electric stress.- Microelectronics and Reliability, vol. 40, p. 751-754, 2000

Bravaix A.- Hot carrier reliability study of second and first impact ionization degradation in 0,15 µm and channel Mosfet’s Agilent 4146B testing at wafer level.- Proceedings of Agilent Technologies 7th European Users Group Meeting, p. -, 2001

Bravaix A., Goguenheim D., Revil N., Vincent E.- Hot-carrier reliability study of second and first impact ionization degradation in 0.15 µm channel-length n-MOSFET’s.- Microelectronic Engineering, vol. 59, p. 101-108, 2001

Bravaix A., Goguenheim D., Revil N., Vincent E.- Injection mechanisms and lifetime prediction with the substrate voltage in 0.15µm channel-length N-MOSFET’s.- Microelectronics and Reliability, vol. 41, p. 1313-1318, 2001

Bravaix A., Goguenheim D., Revil N., Vincent E.- Injection mechanisms and lifetime prediction with the substrate-voltage in 0.15µm channel-length N-MOSFETs.- Proceedings of the 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2001), Bordeaux, France, p. 1313-, 2001

Goguenheim D., Bravaix A., Ananou B., Trapes C., Mondon F., Reimbold G.- Temperature and field dependence of stress induced leakage currents in very thin gate oxides.- Journal of Non-Crystalline Solids, vol. 280, p. 78-85, 2001

Goguenheim D., Bravaix A., Monserie C., Moragues J.M., Lambert P., Boivin P.- Comparison of oxide leakage currents induced by ion implantation and high field electric stress.- Solid State Electronics, vol. 45, n° 8, p. 1355-1360, 2001

Trapes C., Goguenheim D., Bravaix A.- Caractérisation des dégradations engendrées après injections en porteurs chauds sur des échantillons MOS de 2.2nm d’épaisseur d’oxyde.- Actes des IVème Journées Nationales du Réseau Doctoral de Micro-électronique, Strasbourg, France, p. 63, 2001

Bravaix A., Gauthé L., Goguenheim D., Revil N., Rubaldo L., Vincent E.- Efficiency of interface trap generation under hole injections in 2.1nm thick gate-oxide P-MOSFET's.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, à paraître, 2002

Bravaix A., Goguenheim D., Revil N., Vincent E.- Comparison of low leakage and high speed deep submicron PMOSFET's submitted to hole injections.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'02), Stanford Sierra Camp, Lake Tahoe, USA, à paraître, 2002

Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E.- Carrier injection efficiency for the reliability study of 3.5-1.2nm thick gate-oxide CMOS technologies.- Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDim'O2), Grenoble, France, à paraître, 2002

Goguenheim D., Trapes C., Bravaix A.- Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002

Trapes C., Bravaix A., Goguenheim D.- Impact of carrier injection in 2.2 nm thick SiO2 oxides after first and substrate enhanced electron injection.- Proceedings of the 4th Symposium on SiO2 and Advanced Dielectrics, Trento, Italy, à paraître, 2002

Trapes C., Goguenheim D., Bravaix A.- Comparaison des injections en mode d'ionisation primaire et secondaire sur des NMOSFET's de 2.2 nm d'épaisseur d'oxyde.- Actes des Vèmes Journées Nationales du Réseau Doctoral de Micro-électronique, Grenoble, p.192-193, 2002

Bravaix A., Goguenheim D., Revil ., Rubaldo L. - Efficiency of interface trap generation under hole injection in 2.1nm thick gate-oxide P-MOSFET's. – Journal of Non-Crystalline Solids, vol. 322, p.139-146, 2003

Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E. - Carrier injection efficiency for the reliability study of 3.5-1.2nm thick gate-oxide CMOS technologies. - Microelectronic Reliability, vol. 43, p. 1241-1246, 2003

Goguenheim D., Trapes C., Bravaix A. - Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS. - vol. 322, p.183-190, 2003

Trapes C., Bravaix A., Goguenheim D. - Impact of carrier injection in 2.2nm-thick SiO2 oxides after first and substrate enhanced electron injection. - Journal of Non-Crystalline Solids, vol. 322, p.199-205, 2003

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A. - Interface Traps and Oxide Traps creation under NBTI and PBTI in advanced CMOS Technology with a 2nm gate-oxide . - IEEE Integrated Reliability Workshop (IRW) Proc., p. 1-6, 2003.

Bravaix A., Goguenheim D., Revil N., Vincent E.- Deep hole trapping effects in the degradation mechanisms of 6.5 to 2nm thick gate-oxide PMOSFETs.- Microelectronic Engineering, vol. 72, n° 1-4, p. 106-111, 2004

Bravaix A., Goguenheim D., Revil N., Vincent E.- Hole injection enhanced hot-carrier degradation in PMOSFETs used for system on chip applications with 6.5-2nm thick gate-oxide.- Microelectronic Reliability, vol. 44, n° 1, p. 65-77, 2004

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide.- IEEE Transactions on Device Materials Reliability, vol. 4, p. 715-722, 2004

Denais M., Bravaix A., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N.- New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'04), p. 121-124, 2004

Denais M., Bravaix A., Huard V., Parthasarathy C., Ribes G., Perrier F., Rey-Tauriac Y., Revil N.- “On-the-fly” characterization of NBTI in ultra-thin gate-oxide PMOSFET’s.- International Electron Device Meeting Technical Digest (IEDM'04), p. 109-112, 2004

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- New methodology of NBTI xharacterization in order to reduce recovery effect.- Proceedings of the European Solid State Device Research Conference (ESSDERC’04), Leuven, Belgique, p. 265-268, 2004

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS.- Proceedings of the IEEE Integrated Reliability Workshop, p. 119-122, 2004

Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.- Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies.- Proceedings of 24th International Conference on Microelectronics (MIEL'04), Nis, Serbie, p. 649-652, 16-19 May 2004

Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.- Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.- Proceedings of the 16th European Symposium on Reliability of Electron Devices, Failure physics and analysis, (ESREF’05), Bordeaux, France, 10th-14th October 2005, p. 1370-1375, 2005

Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Roy D., Bravaix A.- New perspectives on NBTI in advanced technologies : modelling and characterization.- Proceedings of the 35th European Solid State Device Research Conference (ESSDERC’2005), Grenoble, 12-16 septembre 2005, Editions Frontières, p. 265-268, 2005

Di Gilio T., Bravaix A.- Lifetime prediction of ultra-thin gate-oxide PMOSFETs submitted to hot-carrier injections.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'05), Stanford Sierra Camp, Fallen Leaf Lake, USA, 17th-20th October 2005, p. 54-57, 2005

Guérin C., Huard V., Bravaix A., Denais M., Roux J.M., Perrier F., Baks W.- Combined effects of NBTI and channel hot-carrier effects in pMOSFETs.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'05), Stanford Sierra Camp, Fallen Leaf Lake, USA, 17th-20th October 2005, p. 10-15, 2005

Parthasarathy CR, Denais M., Huard V., Ribes G., Vincent E., Bravaix A.- Characterization and modeling NBTI for design-in-reliability.- Proceedings of the IEEE Integrated Reliability Workshop (IRW'05), Stanford Sierra Camp, Fallen Leaf Lake, USA, 17th-20th October 2005, p. 158-162, 2005

Rey-Tauriac Y., Badoc J., Reynard B., Bianchi R.A., Lachenal D., Bravaix A. Hot-carrier reliability of 20V MOS transistors in 0.13 µm CMOS technology.- Proceedings of the 16th European Symposium on Reliability of Electron Devices, Failure physics and analysis, (ESREF’05), Bordeaux, France, 10th-14th October 2005, p. 1349-1354, 2005

Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.- Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.- Microelectronics Reliability, vol. 4, n° 9-11, p. 1370-1375, 2005

Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.- Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.- Microelectronics Reliability, vol. 45, p. 487-492, 2005

Huard V., Denais M., Parthasarathy C., Ribes G., Perrier F., Revil N., Bravaix A.- Review on NBTI and PBTI degradation in deep submicrometer CMOS technologies.- Microelectronics Reliability, acceptée, 2005

Huard V., Denais M., Perrier F., Revil N., Parthasarathy C., Bravaix A., Vincent E.- A thorough investigation of MOSFETs NBTI degradation.- Microelectronics Reliability, special issue, vol. 45, n° 1, p. 83-98, 2005

Rey-Tauriac Y., Badoc J., Reynard B., Bianchi R.A., Lachenal D., Bravaix A. Hot-carrier reliability of 20V MOS transistors in 0.13 µm CMOS technology.- Microelectronics Reliability, vol. 45, n° 9-11, p. 1349-1354, 2005

Trapes C., Goguenheim D., Bravaix A.- Ultrathin oxide reliability after combined constant voltage stress and substrate hot electron injection.- Journal of Non-Crystalline Solids, vol. 351, n° 21-23, p. 1860-1865, 2005

Trapes C., Goguenheim D., Bravaix A.- Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.- Microelectronics Reliability, vol. 45, p. 883-886, 2005

Parthasarathy C.R., Denais M., Huard V., Ribes G., Roy D., Guerin C., Perrier F., Vincent E., Bravaix A..- Designing in reliability in advanced CMOS technologies..- Microelectronics Reliability,.- vol. 46, n° 9-11, p. 1464-1471, 2006

Guérin C., Huard V., Bravaix A..- Hot-carrier damage from high to low voltage using the energy-driven framework..- Microelectronic Engineering,.- vol. 84, n° 9-10, p. 1938-1942, 2007

Guérin C., Huard V., Bravaix A..- The Energy Driven Hot-Carrier Degradation Modes in NMOSFETs..- IEEE Transactions on Device and Materials Reliability,.- vol. 7, n° 2, p. 225-235, 2007

Huard V., Parthasarathy C.R., Bravaix A., Hugel T., Guérin C., Vincent E..- Design-in reliability approach for NBTI and Hot-Carriers degradation in advanced nodes (invited paper)..- IEEE Transactions on Device and Materials Reliability,.- vol. 7, n° 4, p. 558-570, 2007

Lachenal D., Bravaix A., Monsieur F., Rey-Tauriac Y..- Degradation mechanism understanding of NLDEMOS SOI in RF applications..- Microelectronics Reliability,.- vol. 47, n° 9-11, p. 1634-1638, 2007

Lachenal D., Monsieur F., Rey-Tauriac Y., Bravaix A..- HCI degradation model based on the diffusion equation including the MVHR model..- Microelectronic Engineering,.- vol. 84, n° 9-10, p. 1921-1924, 2007

Parthasarathy C.R., Bravaix A., Guérin C., Denais M., Huard V..- Design-in Reliability for 90-65nm CMOS nodes submitted to hot-carriers and NBTI degradation..- Lecture Notes in Computer Science (LNCS),.- vol. 46, p. 191-200, 2007

Parthasarathy C.R., Denais M., Huard V., Ribes G., Vincent E., Bravaix A..- New insights into recovery characteristics during PMOS NBTI and CHC degradation..- IEEE Transactions on Device and Materials Reliability,.- vol. 7, n° 1, p. 130-137, 2007

	Alain Bravaix
	IM2NP Institut Supérieur d'Electronique et du Numérique (ISEN) Maison des Technologies Place G. Pompidou 83000 Toulon
	Tél. Bur. : +33 (0) 4 94 03 89 92 Tél. Lab. : + 33 (0) 4 94 03 62 75 Fax. : + 33 (0) 4 94 03 89 51
	mail : alain.bravaix@im2np.fr