 | Hector Mera Couto |
| IM2NP Bâtiment IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : +33 (0) 4 13 55 20 26 | |
| mail : hector.mera-couto@im2np.fr |
| | Hector Mera Couto |
| IM2NP Bâtiment IRPHE 49, rue Joliot Curie - BP 146 Technopôle de Château - Gombert 13384 Marseille Cedex 13 France | |
| téléphone : +33 (0) 4 13 55 20 26 | |
| mail : hector.mera-couto@im2np.fr |
Postdoc CNRS
Domaine d'activité :
Quantum transport in nanostructures: molecular junctions, nanowires, and quantum dots; non-equilibrium green's functions; many-body perturbation theory; density functional theory; tight-binding methods; effective mass approximation; model Hamiltonians; current-constrained Hamiltonians; maximum-entropy and information theory.Electron-electron, electron-phonon and electron-impurity scattering in nanostructures.Publications :
1.- Many-electron quantum transport: models and theories. PhD Thesis. University of York. UK. (2005)
2.- Asymptotic self-consistency in quantum transport calculations. Phys. Rev. B, 72, 085311 (2005)
3.- Current-constraining variational approaches to quantum transport. Phys. Rev. B, 72, 165425 (2005)
4.- Hartree-Fock theory of a current-carrying two-dimensional homogeneous electron gas. Phys. Rev. B, 16, 125319 (2007)5.- Role of the virtual orbitals and HOMO-LUMO gap in mean-field approximations to the conductance of molecular junctions. Phys. Rev. B, 77, 195432 (2008) 6.- Using Kohn-Sham density functional theory to describe charged excitations in finite systems. Phys. Rev. B 79, 125109 (2009) 7.- Assessing the accuracy of Kohn-Sham conductances using the Friedel sum-rule. Phys. Rev. B, 81, 035110 (2010) 8.- Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors. App. Phys. Lett, 96, 233507 (2010) 9.- Charged impurity scattering and mobility in silicon nanowires. Phys. Rev. B 82, 115318 (2010) 10.- Are Kohn-Sham conductances accurate? Phys. Rev. Lett. 105, 216408, (2010) 11.- Effective mass versus tight-binding: where is the discord? Proceedings of the IEEE, ISBN 978-1-4244-9383-8 (2010) 12.- Impurity- and phonon-limited mobilities in <110>-oriented silicon nanowires. Proceedings of the IEEE, ISBN 978-1-4244-9383-8 (2010)
