 | Piotr Kruszewski |
| IM2NP Faculté des Sciences et Techniques Campus de Saint Jérôme - Case 142 Avenue Escadrille Normandie Niemen 13397 Marseille Cedex 20 | |
| téléphone : +33 (0) 4 91 28 91 64 | |
| mail : piotr.kruszewski@im2np.fr |
| | Piotr Kruszewski |
| IM2NP Faculté des Sciences et Techniques Campus de Saint Jérôme - Case 142 Avenue Escadrille Normandie Niemen 13397 Marseille Cedex 20 | |
| téléphone : +33 (0) 4 91 28 91 64 | |
| mail : piotr.kruszewski@im2np.fr |
Postdoc, Université d'Aix-Marseille
Domaine d'activité : Defects in semiconductors and quantum dots
Publications :
1) Electron- and hole-related electrical activity of InAs/GaAs quantum dots,
P. Kruszewski, L. Dobaczewski, V.P. Markevich, C. Mitchell, M. Missous, A. R. Peaker, Physica B: Condensed Matter 580, p. 401 (2007).
2) Point defects in SiGe alloys: structural guessing based on electronic transition analysis,
A. Mesli, P. Kruszewski, L. Dobaczewski, Vl. Kolkovsky, A. Nylandsted Larsen, N. V. Abrosimov, J. Mater Sci.: Mater. Electron. 19, p. 115 (2007).
3) Alloy shift of “no-germanium” iron-related electronic levels in unstrained silicon-germanium alloys,
P. Kruszewski, Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, V. P. Markevich, and A. R. Peaker, Phys. Rev. B 76, p. 233203 (2007).
4) Iron-aluminium pair reconfiguration processes in SiGe alloys,
P. Kruszewski, A. Mesli, L. Dobaczewski, N. V. Abrosimov, V. P. Markevich and A. R. Peaker, J. Mater Sci.: Mater. Electron. 18, p. 759 (2007).
5) Hole-related electrical activity of InAs/GaAs quantum dots,
P. Kruszewski, L. Dobaczewski, V. P. Markevich, C. Mitchell, M. Missous, and A. R. Peaker, Acta Phys. Polonica A, Vol. 114, No. 5, p. 1201 (2008).
6) Energy state distributions of the Pb centers at the (100), (110) and (111) Si/SiO2 interfaces investigated by Laplace Deep Level Transient Spectroscopy,
L. Dobaczewski, S. Bernardini, P. Kruszewski, P. K. Hurley, V. P. Markevich, I. D. Hawkins, and A. R. Peaker, Appl. Phys. Letters 92, p. 242104 (2008).
7) Vertically stacked non-volatile memory devices – material considerations,
M. Godlewski, E. Guziewicz, J. Szade, A. Wójcik-Głodowska, Ł. Wachnicki, T. Krajewski, K. Kopalko, R. Jakieła, S. Yatsunenko, E. Przeździecka, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, Microelectron.
8) Relation between photocurrent and DLTS signals observed for quantum dot systems,
P. Kruszewski, L. Dobaczewski, A. Mesli, V. P. Markevich, C. Mitchell, M. Missous and A. R. Peaker, Physica B: Condensed Matter 404, p. 5170 (2009).
9) Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS,
L. Dobaczewski, V. P. Markevich, P. Kruszewski, I. D. Hawkins, A. R. Peaker, Physica B: Condensed Matter 404, p. 4604 (2009).
10) Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix,
E. Placzek-Popko, E. Zielony, J. Trzmiel, J. Szatkowski, Z. Gumienny, T. Wojtowicz, G. Karczewski,
P. Kruszewski, L. Dobaczewski, Physica B: Condensed Matter 404, p. 5173 (2009).
11) ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions, E. Guziewicz, M. Godlewski, T. Krajewski, Ł. Wachnicki, A. Szczepanik, K. Kopalko, A. Wójcik-Głodowska, E. Przeździecka, W. Paszkowicz, E. Łusakowska, P. Kruszewski, N. Huby, G. Tallarida, and S. Ferrari, Journal of Applied Physics 105, p. 122413 (2009).
